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Description: The MMBZ5226B is a dual Zener diode in a SOT23 package. Features: - Low profile surface mount package - Low leakage current - Low noise - Low thermal resistance Applications: - Voltage
Stock:30000
Minimum:100
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MURS320T3G is a fast recovery rectifier diode with a DO-214AB package. It has a maximum reverse voltage of 320V and a maximum forward current of 3A. It has a fast recovery time of 75ns. The MURS320T3
Stock:10000
Minimum:15
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1N5352BRLG is a 5.6V, 1.0W Zener Diode manufactured by ON Semiconductor. It is a surface mount, axial leaded device with a DO-41 package. Description: The 1N5352BRLG is a 5.6V, 1.0W Zener Diode with
Stock:10000
Minimum:15
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Stock:10000
Minimum:10
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Description: NPN Silicon RF Transistor Features: - Low noise figure - High gain - High output power - Low current consumption - High frequency operation Applications: - RF amplifiers - Low noise amp
Stock:10000
Minimum:15
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Stock:10000
Minimum:16
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NXP) Description: The HEF4072BT is a quad 2-input OR gate from NXP Semiconductors. It is housed in a 14-pin SOP package and is designed for use in high-speed switching applications. Features: Low p
Stock:10000
Minimum:15
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Description: The 74HCT32DB is a quad 2-input OR gate integrated circuit from Philips Semiconductors. Features: Low power consumption Low input current High noise immunity High speed Outputs can
Stock:10000
Minimum:15
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Stock:10000
Minimum:10
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Description: Schottky Barrier Rectifier, 360V, 3A Features: - Low forward voltage drop - High current capability - High surge current capability - High reliability - Low power loss, high efficiency -
Stock:10000
Minimum:15
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Stock:10000
Minimum:4
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Stock:10000
Minimum:10
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Stock:10000
Minimum:100
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Description: The MC34063A is a monolithic control circuit containing the primary functions required for DC-to-DC converters. Features: - Internal 500V power MOSFET - Internal 0.5A current limit - Int
Stock:10000
Minimum:3
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Description: NPN Bipolar Transistor Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High transition frequency - High collector current - Low collector-emitter le
Stock:10000
Minimum:100
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Description: NPN Bipolar Transistor Features: Low collector-emitter saturation voltage High current gain Low noise High switching speed High collector current Low collector-emitter
Stock:10000
Minimum:15
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Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Threshold Voltage Applications: - Load Switch - DC-
Stock:30000
Minimum:600
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Description: The 74HC366D is a high-speed CMOS logic octal D-type flip-flop with 3-state outputs. Features: High-speed operation Low power consumption High noise immunity Outputs source/sink 24 m
Stock:10000
Minimum:5
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Description: FDC642P is a P-Channel MOSFET with a drain current of -6A and a drain-source voltage of -20V. Features: - Low On-Resistance - Low Input Capacitance - Low Threshold Voltage - High Power D
Stock:10000
Minimum:15
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Description: SY6280AAC is a low-cost, low-power, high-efficiency, synchronous buck regulator with integrated MOSFETs. Features: Wide input voltage range: 2.5V to 5.5V Output voltage range: 0.8V to
Stock:10000
Minimum:15
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company