≥1:
C$50.31665
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeSearch results filter:
Home > Elec-component > Modules > IGBT
SKM145GB066D is a module manufactured by Semikon. It is a three-phase bridge rectifier module with a rated current of 145A and a maximum reverse voltage of 600V. It is designed for use in motor drives
Stock:2000
Minimum:1
Favorite
MODULE
Infineon Technologies AG
04+
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The Infineon BSM100GB120DN2E3256 is a 1200V/100A IGBT module designed for high power switching applications. It features a high power density, low switching losses, and a high current carrying capacit
Stock:2000
Minimum:1
Favorite
MODULE
Toshiba
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Description: Toshiba 75A, 2-Phase, Brushless DC Motor Driver Module Features: High-efficiency, low-loss power module Built-in protection circuit Over-current protection Over-voltage p
Stock:2000
Minimum:1
Favorite
MODULE
Toshi
00+
WIRE, PTFE, B, BLACK, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/0.2; Voltage rating, AC:600V; Current rating:11A; Colour, primary insulation:Black; Material, primary insulation:PTFE; Diameter, External:1.6mm; RoHS Compliant: Yes
Description: Toshiba IGBT Module Features: Low on-state voltage drop High speed switching Low switching losses High surge capability High reliability Low noise Applications: Motor
Stock:2000
Minimum:1
Favorite
Stock:2000
Minimum:1
Favorite
MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 400 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor
Description: The MG400Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module with a rated current of 400A and a voltage rating of 1200V. Features: Low saturation voltage High
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3 Fast; Housing: EconoPACK™ 2;
Stock:2000
Minimum:1
Favorite
Description: The SKM195GB126DN is a three-phase bridge rectifier module from Semikron. Features: 1200V blocking voltage Low forward voltage drop High surge current capability Low thermal resista
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
The FZ900R12KF5 is a 1200V, 900A, IGBT module manufactured by EUPEC. It is designed to be used in high-power applications such as motor drives, UPS systems, and solar inverters. Features: 1200V, 900
Stock:2000
Minimum:1
Favorite
Description: CM300DY-12NF is a power module manufactured by Mitsubishi. It is designed for use in inverters, converters, and servo applications. The device contains a three-phase bridge circuit inclu
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes
Description: The BSM150GT120DN2 is a 1200V, 150A IGBT module from EUPEC. Features: - Low switching losses - Low noise - High speed switching - High current capability - Low thermal resistance Applic
Stock:2000
Minimum:1
Favorite
MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking
Stock:2000
Minimum:1
Favorite
MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV VBRCES | 1.2KA IC
Stock:2000
Minimum:1
Favorite
The Mitsubishi CM100DY-12H is a 100A, IGBT module. It is designed for use in motor drives and other applications requiring high power control and fast switching times. It has a low on-state voltage dr
Stock:2000
Minimum:1
Favorite
The CM150DY-12H is a module manufactured by Mitsubishi. It is a power module designed for use in inverter circuits. It is a 150A, 1200V, N-channel IGBT module with a built-in fast recovery diode. It h
Stock:2000
Minimum:1
Favorite
Description: The CM50DY-12H is an IGBT module manufactured by Mitsubishi. It is a high-power module with a rated collector-emitter voltage of 1200V, a collector current of 50A, and a gate-emitter volt
Stock:2000
Minimum:1
Favorite
SKM300GB123D is a module manufactured by Semikron. It is a three-phase inverter bridge module with a rated current of 300A and a voltage of 1200V. It is designed for use in motor drives, welding machi
Stock:2000
Minimum:1
Favorite
Description: The CM50MXB2-24A is a module from MIT that is designed for use in a wide range of applications. It is a 50A, 24V DC module with a maximum current of 50A and a maximum voltage of 24V DC.
Stock:2000
Minimum:1
Favorite
Description: This is a three-phase insulated gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 75A collector current Low on-state voltage drop High switching spee
Stock:2000
Minimum:1
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company