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Description
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
Title
140 A, 1200 V, N-CHANNEL IGBT
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Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture IXYS Corporation |
VUB120-16NO2L Specifications: Polarity: N-Channel ; Number of units in IC: 1 |
VUB145-16NOXT Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 1.10E6 mA ; Pin Count: 22 ; Number of Diodes: 6 |
VUB160-12NO2L Specifications: Polarity: N-Channel ; Number of units in IC: 1 |
VUB72-12NOXT Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 530000 mA ; Pin Count: 12 ; Number of Diodes: 6 |
VUI72-16NOXT |
VUM33-06PH Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.1200 ohms ; Package Type: MODULE-8 ; Number of units in IC: 1 |
VUM35-05P1 |
VUO120-12NO2T Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 1.10E6 mA ; Pin Count: 10 ; Number of Diodes: 6 |
VUO162-16NO7 |
VUO192-16NO7 |
VUO52-22NO1 |
VUO64-16NO7 |
VUO84-16NO7 |
VUO98-18NO7 |
VVZB120-12IO2(T) Specifications: VRRM: 1200 volts ; IT(RMS): 77 amps ; IGT: 100 mA ; Standards and Certifications: RoHS ; Pin Count: 13 |
VVZB135-16IOXT Specifications: VRRM: 1600 volts ; IGT: 78 mA ; Package Type: MODULE-22 ; Pin Count: 22 |
VWO35-06IO7 Specifications: VDRM: 600 volts ; VRRM: 600 volts ; IT(RMS): 35 amps ; IGT: 25 mA ; Standards and Certifications: RoHS ; Pin Count: 12 |
W1520NC500 Specifications: Number of Diodes: 1 ; VRRM: 5000 volts ; IF: 1.48E6 mA ; trr: 42 ns ; RoHS Compliant: RoHS |
W1520NT520 Specifications: Number of Diodes: 1 ; VRRM: 5200 volts ; IF: 1.48E6 mA ; trr: 42 ns ; RoHS Compliant: RoHS |
W1520NT600 Specifications: Number of Diodes: 1 ; VRRM: 6000 volts ; IF: 1.48E6 mA ; trr: 42 ns ; RoHS Compliant: RoHS |
W3270NC220CAA Specifications: Number of Diodes: 1 ; VRRM: 2200 volts ; IF: 3.40E6 mA ; trr: 25 ns ; RoHS Compliant: RoHS |
PDM31034SA15SOTY : 1 Megabit 3.3V Static RAM 128K X 8-bit Revolutionary Pinout PDM34089SA7QTR : 3.3v 64kx32 Fast CMOS Synchronous Static RAM With Burst Counter PDM41256SA12TA : 256k Static RAM 32kx8-bit PDM41258LA10SOA : 256k Static RAM 64kx4-bit IXTQ16N50P : Polar N-channel MOSFETs International standard packages ?? Unclamped Inductive Switching (UIS) rated ?? Low package inductance - easy to drive and to protect IXTN30N100L : Power Mosfets with Extended Fbsoa MWI225-17E9 : Igbt Semiconductor Module; MOD IGBT SIXPACK E+ Specifications: Configuration: Three Phase ; Input: Standard ; Voltage - Collector Emitter Breakdown (Max): 1700V ; Current - Collector (Ic) (Max): 335A ; Power - Max: 1400W ; Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A ; Current - Collector Cutoff (Max): 600μA ; NTC Thermistor: Yes ; Input Capacitanc IXFH102N15T : Fet - Single Discrete Semiconductor Product 102A 150V 455W Through Hole; MOSFET N-CH 150V 102A TO-247 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 150V ; Current - Continuous Drain (Id) @ 25° C: 102A ; Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V ; Input Capacitance (Ciss) @ Vds: 5220pF @ 25V ; Power - Max: 455W ; Packaging: IXFK98N50P3 : Fet - Single Discrete Semiconductor Product 98A 500V 1300W Through Hole; MOSFET N-CH 500V 98A TO264 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 500V ; Current - Continuous Drain (Id) @ 25° C: 98A ; Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V ; Input Capacitance (Ciss) @ Vds: 13100pF @ 25V ; Power - Max: 1300W ; Packaging: IRFC460-6X : 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.2700 ohms ; Package Type: DIE-2 ; Number of units in IC: 1 IXSD35N120B-7U : 1200 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Package Type: DIE-7 ; Number of units in IC: 1 IXFX100N65X2 : MOSFET MOSFET 650V/100A Ultra Junction X2 IXYS Ultra-Junction X2-Class HiPerFET Power MOSFETs are designed for high-efficiency, high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. The X2-Class are available in many standard industrial pac |
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282 buyer reviews from Canada
Nicole Green
Length of registration:7 years
I recently purchased an IC VUB120-16NO2T from your company and I am very pleased with the product. It is a great fit for my application and I am very satisfied with its performance. The IC is easy to use and the instructions were clear and concise. I appreciate the quality of the product and the customer service I received. I would highly recommend your company to anyone looking for a reliable IC.
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03/17/2023
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VUB120-16NO2
VUB120-16NO2 has several brands around the world that may have alternate names for VUB120-16NO2 due to regional differences or acquisition. VUB120-16NO2 may also be known as the following names:
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