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Description
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
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Introduction:
IGBT's unique baseplate power module (Insulated Gate Bipolar Transistor) is currently the most widely used tool in electrical power, it is common to find power transformers made from these gases. IGBT power modules can create complex topologies in a simple way. These modules work better than the bipolar transistor comparison modules, while now we have the simple gate-drive requirement of standard MOSFET.
Core Parameters:
● Long terminals
● Limited current per terminal
● Power module
● Full bridge 3 phase
● Freewheeling fast diode
Circuit Diagram:
Working:
Because the IGBT is an electrically controlled device, it only needs a small volume at the Gateway to continue operating on a device unlike the BJT which requires that the Base is always provided with sufficient quantity to maintain the satellite. IGBT can change the current of non-specific precision (Group to Emitter), while MOSFET has the ability to change current variables. Because, it controlled only the way forward. The practical principle of rotating IGBT gates is like the MOSFET of a power station. The main difference is that the resistance provided by the channel that drives the current current through the device in its active state is very small for IGBT.
Applications:
● Induction heating
● Switch mode power supplies
● Traction motor controls
● Refrigerators
Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture Eupec GmbH & Co KG |
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D1029N |
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BSM200GA120DN2S : BSM25GB120DN2 : D2601N : SCR / Diode Presspacks D269N : D368S : D758N-400 : DDB6U104NRR : FD800R33KF2-KB5 : T308F : SCR/ Diode Presspacks TD92ND : SCR / Diode Modules |
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Same catergory |
2N7000 : 60 V, N-channel Enhancement Mode MOS Transistor. The 2N7000 utilizes Calogic's vertical DMOS technology. The device is well suited for switching applications where of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. ORDERING INFORMATION Part BS170L X2N7000 Package Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range to +150oC. BCR10CS-8L : Type = Triac ;; Voltage = 400V ;; Current = 10A ;; Package = Obsolete. BZX55C33 : 33V, 0.5W Zener Diode. Power Dissipation Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16" from case for 10 seconds) Surge Power** *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. NOTES: 1) These ratings are based on a maximum junction. FMQ-G2FLS : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) . KRC410V : BRTs. = Built in Bias Resistor ;; Package = VSM. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. With Built-in Bias Resistors. Simplify Circuit Design. High Packing Density. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING UNIT V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature. NTE2340 : Silicon NPN Transistor. Darlington Power Amp, Switch.. NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch : D 60V Zener Diode BuiltIn Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) CollectorBase Voltage, VCBO. 60 ±10V CollectorEmitter Voltage,. RR3PI110AC : Relay 3pco 110vac. General purpose 10 amp Plug In Power Relay, available in 2PCO and 3PCO s Large selection of models with different operating options s Arc barriers prevent flashover between contacts s Manual operator for circuit testing colour coded for AC/DC identification s Mechanical flag indicator showing armature operation s Gold flashed contacts s UL, CSA and VDE approvals. SAP09P : For Power Amplifier Power Transistor. Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE VF RE Conditions VCE = 150V VEB 30mA VCE 6mA VCE V mV Ratings Symbol VCBO VCEO VEBO IF Tj Tstg Ratings to +150 . STPR520 : 200V Ultra-Fast Diodes. Ultra-fast Recovery Rectifier Diodes. MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) Suited for SMPS Very low forward losses Negligible switching losses High surge current capability Insulated packages: / TO-220FPAC Insulation voltage 2000V DC Capacitance = 12pF Low cost single chip rectifier suited for Switch Mode Power Supplies and high frequency to DC converters. T708N : SCR/ Diode Presspacks. repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state voltage non-repetitive peak reverse voltage tvj = -40°Ctvj max tvj = -40°Ctvj max tvj = +25°Ctvj max VDRM, VRRM VDSM = VDRM VRSM = VRRM ITRMSM = 64°C tvj 10 ms tvj = tvj max, 10 ms tvj 10 ms tvj = tvj max, 10 ms DIN IEC 50 Hz iGM= 1 A, diG/dt = 1 A/µs tvj = tvj max,. CSD17507Q5A : 30V N-Channel High Side NexFET Power MOSFET With 20 Volt Vgs 30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs. A0009-AL : 6.6 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 100000 Hz ; Input Voltage: 36 to 72 volts ; Output Voltage: 3.3 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS. FMP08N50E : 7.5 A, 500 V, 0.79 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.7900 ohms ; PD: 2020 milliwatts ; Package Type: TO-220, TO-220AB, 3 PIN ; Number of units in IC: 1. FS100KMH-03 : 100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0054 ohms ; Package Type: TO-220, TO-220FN, 3 PIN ; Number of units in IC: 1. IRFF330-JQR-B : 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 1 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN ; Number of units in IC: 1. SQMW5R22J : RESISTOR, WIRE WOUND, 5 W, 5 %, 300 ppm, 0.22 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 0.2200 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 5 watts (0.0067. TCJT226M006A0150 : CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 6.3 V, 22 uF, SURFACE MOUNT, 3528LM. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 22 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 13.2 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size:. 934056165115 : 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose ; IF: 200 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, SMD, UMT3, SC-70, CMPAK-3 ; Pin Count: 3 ; Number of Diodes: 2. |
282 buyer reviews from Canada
Lauren Hughes
Length of registration:7 years
We are very pleased with the performance of the BSM50GD120DN2E3226 electronic component from Utsource. The component has met our expectations and has been reliable in our applications. We look forward to continuing our relationship with Utsource for future projects.
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03/17/2023
Jacks Jim
Length of registration:9 years
My small order arrived the next day. Excellent service and an excellent product as usual.
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10/26/2022
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BSM50GD120DN2E3226
BSM50GD120DN2E3226 has several brands around the world that may have alternate names for BSM50GD120DN2E3226 due to regional differences or acquisition. BSM50GD120DN2E3226 may also be known as the following names:
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