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Home > Elec-component > Modules > IGBT
MODULE
Eupec
EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3
Description: The FS150R12KE3 is a 3-phase insulated gate bipolar transistor (IGBT) module produced by EUPEC. It has an embedded heat sink and it can be used in applications such as switched-mode power
Stock:2000
Minimum:1
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The FPDB50PH60 is a module manufactured by Fairchild. It is a 600V, 50A, dual N-channel MOSFET. It is designed for use in synchronous rectification applications and high current switching applications
Stock:5000
Minimum:1
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Stock:2000
Minimum:1
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BSM20GP-60 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with an integrated diode. It has a voltage rating of 600V and a current rating of 20A. The BSM20
Stock:2000
Minimum:1
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VUB72-16NO1 is a module manufactured by IXYS. It is a three-phase bridge rectifier module with a voltage rating of 1600V and a current rating of 72A. It is designed for use in motor control and power
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 600V PIM; Package: AG-EASY2-1; IC max: 15.0 A; VCEsat typ: 1.95 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT2 Low Loss; Housing: EasyPIM? 2;
Description: FP15R06KL4 is an insulated gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a rated current of 15A and a voltage of 600V. Features: -
Stock:2000
Minimum:1
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Description: SKM145GAL124DN is a three-phase IGBT module from Semikron. Features: Three-phase IGBT module 1200V/145A Low inductance High current capability Low switching losses Low noise High r
Stock:2000
Minimum:1
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Description: The FP25R12KT3 is a three-phase insulated-gate bipolar transistor (IGBT) module from Eupec. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 25A
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG30J6ES11 is a three-phase brushless motor driver module manufactured by Toshiba America Electronic Components. It is designed to drive three-phase brushless motors with a maximum ou
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V SixPACK; Package: AG-ECONOPP-1; IC max: 225.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EconoPACK? +;
FS225R12KE3 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a reverse blocking thyristor (RBT) and a fast recovery diode (FRD). It is designed for use
Stock:2000
Minimum:1
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Description: The MG150Q2YS51 is a three-phase brushless motor driver module from Toshiba. It is designed for use in motor control applications such as industrial equipment, home appliances, and automo
Stock:2000
Minimum:1
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Description: CM30TF-12H is a Mitsubishi inverter module produced by Mitsubishi Electric. Features: The CM30TF-12H is a single-phase, 200V-class three-level inverter module that can handle up to 12kW
Stock:2000
Minimum:1
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VUB72-16N01 is a module manufactured by IXYS. It is a three-phase bridge rectifier with a voltage rating of 1600V and a current rating of 72A. The module is designed for use in motor drives, welding m
Stock:2000
Minimum:1
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Description: The FS300R12KE3-S1 is an insulated gate bipolar transistor (IGBT) module made by EUPEC. Features: 1200V blocking voltage 300A collector current Low switching losses Low EMI High rel
Stock:2000
Minimum:1
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MODULE
Eupec
04+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: - 1200 Volts - 50 Amps - 4.1 mOhms - Low Vce(sat) - Improved EMI performance
Stock:2000
Minimum:1
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MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
VUB120-16NO1 is an IGBT module manufactured by IXYS. It is a three-phase, insulated gate bipolar transistor (IGBT) module with a maximum current rating of 120A and a maximum voltage rating of 1600V. I
Stock:2000
Minimum:1
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Description: This is a SEMIKRON module. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1200V and a maximum collector current of 40
Stock:2000
Minimum:1
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MODULE
Toshiba
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Description: This is a module manufactured by Toshiba. It is a power module with a voltage rating of 600V and a current rating of 10A. Features: High-speed switching Low loss Low EMI noise Hi
Stock:2000
Minimum:1
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VUB120-16N02 is an IGBT module manufactured by IXYS. It is a 1200V, 16A, NPT IGBT module. It has a low on-state voltage drop, fast switching speed, and low gate drive power. It is suitable for use in
Stock:2000
Minimum:1
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SKM300GA123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in motor drives, welding machines, and other applications requiring high power rectification. Fe
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company