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Home > Elec-component > Modules > IGBT
MITSUBISHI CM150RX1-12A is a power module with a voltage rating of 1200V and a current rating of 150A. It is designed for use in medium-voltage applications such as motor drives, power supplies, and U
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Toshiba America Electronic Components
Vces (volts) = 1200 ;; Ic (amps) = 25 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
Description: The MG25Q6ES51 is a 25A, 600V N-channel MOSFET module with a low on-resistance. It is designed for use in high-efficiency power supplies, motor drives, and other power switching applicati
Stock:2000
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Description: The BSM100GP60 is a high-performance insulated-gate bipolar transistor (IGBT) module from EUPEC. It is designed for use in high-power applications such as motor drives, welding, and unint
Stock:2000
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The FPDB50PH60 is a module manufactured by Fairchild. It is a 600V, 50A, dual N-channel MOSFET. It is designed for use in synchronous rectification applications and high current switching applications
Stock:5000
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SKM100GB125DN is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a rated current of 100A and a voltage of 1200V. It is designed for use in motor drives, power suppl
Stock:2000
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Description: This is a 25A, 600V, three-phase inverter module from Toshiba. Features: High-speed switching Low loss High reliability Low noise High efficiency High surge capability
Stock:2000
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Description: The Mitsubishi CM400DY-12H is an IGBT power module with a current rating of 400A and a voltage rating of 1200V. Features: Built-in over-current protection (OCP) and short-circuit protec
Stock:2000
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VUB72-16NO1 is a module manufactured by IXYS. It is a three-phase bridge rectifier module with a voltage rating of 1600V and a current rating of 72A. It is designed for use in motor control and power
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75J2YS40 is a 2GB DDR3 SDRAM module from Toshiba America Electronic Components. Features: - 2GB DDR3 SDRAM - 200-pin SO-DIMM - PC3-12800 (1600MHz) - Unbuffered - Non-ECC - 1.5V A
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Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2G is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High s
Stock:2000
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Description: The BSM35GP120 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-voltage, high-speed switching device with a maximum collector-emitter voltage of 1200V and a
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Description: The SKM145GB128D is a high-performance, low-loss, three-phase bridge module from Semikron. It is designed for use in motor drives, power supplies, and other power conversion applications.
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-ECONO2-1; IC max: 40.0 A; VCEsat typ: 1.8 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3; Housing: EconoPIM™ 2;
Description: The FP40R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a maximum blocking voltage of 1200V. Features: Maximum blocking
Stock:2000
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Description: The MG15Q6ES51 is a three-phase brushless motor driver module from Toshiba. It is designed for use in a wide range of motor control applications, including air conditioners, washing machi
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Description: The SKM75GB128D is a three-phase bridge module from Semikron. It is a high-power module with a maximum current rating of 75A and a maximum voltage rating of 1200V. Features: - High power
Stock:2000
Minimum:1
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MODULE
Eupec
04+
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: - 1200 Volts - 50 Amps - 4.1 mOhms - Low Vce(sat) - Improved EMI performance
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 50 A, 450 V, NPN, Si, POWER TRANSISTOR, 2-33C1A, 3 PIN, BIP General Purpose Power
Description: The MG50G1BL3 is a 50A IGBT module from Toshiba America Electronic Components. It is designed to provide high power switching and control in a wide range of applications. Features: Low
Stock:5000
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company