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Homepage > Elektronikkomponenten > IC-Chips > Flash-Speicher
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Description: The MT48LC16M16A2BG-75 is a 16 Meg x 16 (256Mb) Synchronous DRAM (SDRAM) organized as 4 banks of 4M x 16 bits. The device is fabricated using Micron's high-performance CMOS technology. F
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MX25L8005PC-15G is a 8-pin DIP (Dual In-line Package) Flash Memory manufactured by MXIC. It is a non-volatile memory with a capacity of 8Mbit (1MByte). It has a fast read speed of up to 104MHz and a w
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Description: MT46V16M16TG-6T is a 16M x 16 DDR SDRAM (Double Data Rate Synchronous DRAM) manufactured by Micron Technology. Features: 16M x 16 organization 3.3V power supply 6ns access time 4 ba
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Description: The AM29LV400BT-70EC is a 4 Megabit (512K x 8-bit) CMOS 3.0 Volt-only Boot Sector Flash memory device. Features: - Fast access time: 70ns - Low power consumption - Advanced sector protec
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TSSOP
Micron Technology
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66
Description: The MT46V32M16TG-6T is a 512Mb (32Mx16) DDR SDRAM device organized as 4 banks of 4Mx16. It is fabricated using Micron's high performance CMOS technology. Features: 3.3V power supply C
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Description: The MT47H64M16HR-3 is a 16M x 64-bit (1GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on sixteen 512M x 8-bit DDR3 FBGA components. Features: 1GB (16M x 64-
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Description: The MT48LC16M4A2P-75 is a 16Mbit (2M x 8) Synchronous DRAM module from Micron. It is a 54-pin TSOP package and is a low-power, high-speed CMOS synchronous DRAM. Features: 2M x 8 organiz
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Description: The MX29F040PC-70 is a 4Mbit (512K x 8-bit) CMOS Flash Memory manufactured by Macronix. Features: Low power consumption Fast programming time High speed access time Low voltage opera
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Description: K6X4008C1F-BF55 is a 8Mb (1M x 8-bit) CMOS Static RAM manufactured by Samsung. Features: Fast access time: 55ns Low power consumption: Active current: 20mA (max) Standby current: 1mA
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