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Inicio > Componentes Electrónicos > Chips IC > PMIC -Interruptores de distribución de energía, controladores de carga.
Depósito:10000
Mínimo:2
Favorita
Description: The MC15XS3400DHFK is an integrated power management IC (PMIC) from NXP USA. It is a highly integrated, low quiescent current, high efficiency, dual-channel, synchronous buck converter wi
Depósito:5000
Mínimo:1
Favorita
8-SOIC (0.154", 3.90mm Width)
Infineon Technologies
IC HIGH SIDE SWITCH IPS 8SOIC
Description: AUIPS7091GTR is a low-side automotive power switch with integrated current sense amplifier from Infineon Technologies. Features: Low-side power switch with integrated current sense amp
Depósito:10000
Mínimo:1
Favorita
SOP-8
Diodes
11+
1.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE
Depósito:10000
Mínimo:2
Favorita
Description: AUIPS7125RTRL is an N-channel power MOSFET from Infineon Technologies. Features: Low on-resistance Low input capacitance Low gate charge Low threshold voltage High current
Depósito:10000
Mínimo:3
Favorita
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:2
Favorita
Description: BUK214-50Y,118 is a N-Channel Power MOSFET transistor manufactured by NXP USA. Features: Low on-state resistance Low gate charge Fast switching speed High current capability
Depósito:10000
Mínimo:2
Favorita
Description: The VN750 is a N-channel enhancement mode vertical DMOS transistor with a low on-state resistance and a high avalanche energy rating. Features: Low on-state resistance High avalanche e
Depósito:10000
Mínimo:1
Favorita
The VNQ830E-E is a dual N-channel enhancement mode vertical DMOS FET manufactured by STMicroelectronics. It is available in a SOP-28 package and has a maximum drain-source voltage of 30V. The devic
Depósito:10000
Mínimo:2
Favorita
Description: The MC33880DW is a high-voltage, high-current, low-side, MOSFET driver with integrated protection features. Features: High-voltage capability up to 600 V High-current capability up to
Depósito:10000
Mínimo:1
Favorita
Description: The VN21 is a N-channel enhancement mode vertical DMOS transistor in a TO-220 package. Features: - Low on-state resistance - Low gate charge - Low threshold voltage - Fast switching App
Depósito:10000
Mínimo:1
Favorita
Depósito:5000
Mínimo:1
Favorita
Description: The IR6220STRL is a N-Channel Enhancement Mode Field Effect Transistor (FET) from Infineon Technologies. It is a TO-263-5 package and is designed for use in power switching application
Depósito:10000
Mínimo:2
Favorita
Description: RT9724GB is a high-efficiency, low-noise, low-dropout linear regulator with built-in power MOSFET. It is available in a SOT23-6 package. Features: Low Dropout Voltage: 0.4V (Typ.) Low
Depósito:10000
Mínimo:2
Favorita
Description: BTS410F2NKSA1 is a N-channel enhancement mode vertical DMOS FET with a maximum drain current of 4A. Features: Low on-state resistance Low gate charge Fast switching Low therm
Depósito:10000
Mínimo:2
Favorita
Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching High Voltage Capability Ease of Paralleling Applications: DC-DC Converters Load Switching Battery M
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:2
Favorita
NCV7601PG is a low-dropout (LDO) linear voltage regulator from On Semiconductor. It is a fixed output voltage regulator with a voltage output of 1.8V. The device has a maximum output current of 500mA
Depósito:10000
Mínimo:1
Favorita
Description: The TBD62783APG is a high-speed, low-saturation, low-power, high-efficiency, low-voltage, dual N-channel MOSFET driver. Features: High speed: tPHL/tPLH = 5.5/6.5ns (typ.) Low saturatio
Depósito:10000
Mínimo:2
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.