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Description: IGBT Module Feature: - High speed switching - Low on-state voltage drop - Low switching losses - High surge current capability - High short-circuit withstand time - Low noise Ap
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: This is a module from Mitsubishi Electric that is used to control the operation of a motor. It is a 50A rated module with a 6-pole structure. Features: Rated current of 50A 6
Depósito:2000
Mínimo:1
Favorita
MG15Q6ES42 is a 15A, 600V, three-phase insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed to provide high-speed switching and low loss in power switchi
Depósito:2000
Mínimo:1
Favorita
The MG200Q1UK1 is a power module from Mitsubishi Electric. It is a high-performance, low-loss insulated gate bipolar transistor (IGBT) module. This module is designed for use in motor control applicat
Depósito:2000
Mínimo:1
Favorita
Depósito:5000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Description: Toshiba MG50J1BS11 is a 50A, 600V, IGBT Module. Features: Low saturation voltage High speed switching Low noise operation High temperature operation Low power dissipation
Depósito:2000
Mínimo:1
Favorita
The MG50Q6ES11 is a power module manufactured by Mitsubishi Electric. It is a 6-pack IGBT module with a voltage rating of 600V and a current rating of 50A. It is designed for use in motor control appl
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Depósito:2000
Mínimo:1
Favorita
MODULE
Network Hub; Approval Categories:Cisco CDP Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
Depósito:2000
Mínimo:1
Favorita
SKM145GB124DN is a module from Semikron. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1200V. It has a maximum collector current of 1
Depósito:2000
Mínimo:1
Favorita
Description: The MG25Q2YS40 is a 2-bit MOSFET module from Toshiba America Electronic Components. It is a surface mount device with a maximum drain-source voltage of 25V and a maximum drain current of
Depósito:2000
Mínimo:1
Favorita
Description: The MG30G6EL1 is a three-phase brushless motor module manufactured by Mitsubishi Electric. It is designed for use with the company's G6 series of brushless motors and is used to control t
Depósito:2000
Mínimo:1
Favorita
Description: The MG25Q6ES43 is a 25A, 600V, three-phase insulated gate bipolar transistor (IGBT) module. Features: Low saturation voltage Low switching loss High speed switching High reliab
Depósito:2000
Mínimo:1
Favorita
Description: This is a module manufactured by Mitsubishi Electric. It is a 30A, 1-phase, 400V, 3-phase inverter module. Features: High efficiency Low noise High speed response High re
Depósito:5000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The MG400Q2YS60A is a 600V, 400A insulated gate bipolar transistor (IGBT) module from Powerex Power Semiconductors. Features: Low saturation voltage High speed switching Low swit
Depósito:2000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.