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Depósito:2000
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Depósito:2000
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MITSUBIS CM100DY-24H is a module with a power semiconductor module. It is a 600V, 100A, 3-Phase IGBT Module. It is used in inverters and converters, such as in air conditioning, general machinery, wel
Depósito:2000
Mínimo:1
Favorita
MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
VUB160-16N01 is an IGBT module manufactured by IXYS. It is a high-voltage, high-current, high-speed IGBT module with a maximum collector-emitter voltage of 1600V and a maximum collector current of 160
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
SKM400GAL124D is a module produced by Semikron, a German company that specializes in the production of power semiconductors. It is a three-phase bridge rectifier module with a maximum current rating o
Depósito:2000
Mínimo:1
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Description: Toshiba MG75Q2YS50 is a 75A, 600V, N-Channel IGBT Module. Features: Low on-state voltage drop Low switching loss High speed switching High reliability Low noise High surge capabilit
Depósito:2000
Mínimo:1
Favorita
Description: This is a Toshiba IGBT module. Features: High speed switching Low on-state resistance High surge current capability Low inductance Low noise High reliability Applicati
Depósito:2000
Mínimo:1
Favorita
CM150DY-12NF is a high-performance IGBT module manufactured by Mitsubishi Electric. It is designed for use in high-power switching applications such as motor control, UPS, and welding. The module fea
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Depósito:2000
Mínimo:1
Favorita
Description: SKM75GD123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in motor control applications. Features: Three-phase bridge rectifier Rated voltag
Depósito:2000
Mínimo:1
Favorita
Description: The MG100G1AL2 is a 100A, 1200V, IGBT module manufactured by Mitsubishi Electric. Features: Low switching loss Low noise High speed switching High reliability Low saturation voltage
Depósito:2000
Mínimo:1
Favorita
Description: Toshiba MG25Q6ES42 is a 25A, 600V, N-channel IGBT module. Feature: Low on-state voltage drop High speed switching Low gate charge Low power loss High surge current capability High r
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba
00+
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Description: This is a three-phase brushless motor driver module manufactured by Toshiba. It is designed to drive three-phase brushless motors with a maximum output current of 150A. Features: High-
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
SKM151A4R is a module manufactured by Semikron. It is a three-phase bridge rectifier module with four diodes. It has a maximum current rating of 150A and a maximum voltage rating of 1200V. The module
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75Q2YS1 is a 75A, 600V, N-channel IGBT module from Toshiba America Electronic Components. Features: Low on-state resistance Low switching noise High speed switching High
Depósito:2000
Mínimo:1
Favorita
MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.