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Description: The CM600DU-24NFH is a 600V, 24A, IGBT Module from Mitsubishi. Features: High speed switching Low on-state voltage Low power loss High reliability Easy to mount Applications: The C
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba
00+
Vces (volts) = 1200 ;; Ic (amps) = 200 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
Depósito:2000
Mínimo:1
Favorita
Description: SKM200GB123D is a three-phase, insulated-gate bipolar transistor module manufactured by Semikron. Features: Maximum collector current of 200A Maximum collector-emitter voltage of 1200V
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 75 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75N2YS40 is a 3-phase brushless motor driver module from Toshiba America Electronic Components. Features: Output current: 75A Operating voltage: 10V to 50V Control method
Depósito:2000
Mínimo:1
Favorita
MG15Q6ES1 is a 15kVA three-phase AC power module manufactured by Mitsubishi Electric. It is designed for use in industrial applications such as motor control, power distribution, and other equipment.
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec/inf
Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free ftBGA; Pins: 256; Temperature: AUTO; LUTs k: 17
Description: This is an IGBT module manufactured by EUPEC/INF. It is a three-phase, 40A, 1200V IGBT module. Features: - Low switching losses - High speed switching - High current carrying capacity -
Depósito:2000
Mínimo:1
Favorita
CM150DY-12NF is a high-performance IGBT module manufactured by Mitsubishi Electric. It is designed for use in high-power switching applications such as motor control, UPS, and welding. The module fea
Depósito:2000
Mínimo:1
Favorita
The CM300DY-24NF is a Mitsubishi IGBT module. It is a high-power switching device that combines an insulated gate bipolar transistor (IGBT) and a fast recovery diode (FRD) in a single package. Descri
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The CM200DY-12NF is a 1200V, 200A, N-channel IGBT module from Mitsubishi Electric. Features: Low saturation voltage High speed switching High current capacity Low noise High reliabi
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba
00+
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Description: Toshiba MG200J2YS50 is an IGBT module with an isolated baseplate. Features: Low saturation voltage High speed switching Low switching loss High reliability High surge capability Low
Depósito:2000
Mínimo:1
Favorita
Description: The SKM200GB124D is a three-phase bridge rectifier module from Semikron. It is designed for use in high power applications and features a high current capability of 200A. Features: High
Depósito:2000
Mínimo:1
Favorita
Description: The MG600Q2YS60A is an IGBT module designed and manufactured by Mitsubishi Electric. It is a 600V/60A device with a maximum collector-emitter voltage of 600V and a maximum collector curre
Depósito:2000
Mínimo:1
Favorita
The CM150DU-24F is a power module manufactured by Mitsubishi. It is a 600V, 150A, 3-phase bridge rectifier module. It is designed for use in motor drives, UPS systems, and other power conversion appli
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
N/A
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The BSM150GB120DN2 is an insulated-gate bipolar transistor (IGBT) module produced by EUPEC. The module is designed with a 1200volt, 150amp IGBT, rated with a current of up to 480A and a voltage of up
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.