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Código de paísINFINEON
Su búsqueda:Infineon, Cantidad de productos pertinentes:47
Depósito:10000
Mínimo:2
Favorita
Description: The IRF3205PBF is a N-channel Power MOSFET from Infineon Technologies. It is designed to deliver high performance in a wide variety of applications. Features: Low on-resistance Low gat
Depósito:10000
Mínimo:2
Favorita
Depósito:5000
Mínimo:1
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Depósito:10000
Mínimo:2
Favorita
Description: The SPA17N80C3 is a N-channel MOSFET from Infineon Technologies. It is designed for use in a wide range of applications, including power supplies, motor control, and audio amplifiers.
Depósito:10000
Mínimo:1
Favorita
Depósito:10000
Mínimo:2
Favorita
Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
Depósito:10000
Mínimo:1
Favorita
Description: The IR2010STRPBF is an integrated circuit from Infineon Technologies. It is a high-voltage, high-speed, low-side switch designed for automotive applications. Features: * High voltage ope
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:4
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Depósito:10000
Mínimo:1
Favorita
Description: The IRLML6402TRPBF is a 3-pin SOT-23 package N-Channel MOSFET from Infineon Technologies. It is a low-voltage, low-power MOSFET with a maximum drain-source voltage of 30V and a maximum dr
Depósito:10000
Mínimo:2
Favorita
Description: The ICE3PCS01GXUMA1 is a high-performance, low-cost, low-power, integrated gate driver IC from Infineon Technologies. It is designed to drive power MOSFETs and IGBTs in hard switching and
Depósito:10000
Mínimo:1
Favorita
Description: The IRFP250NPBF is a N-channel Power MOSFET from Infineon Technologies. It has a drain-source voltage of 100V, a drain current of 33A, and a maximum power dissipation of 140W. Features:
Depósito:10000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Depósito:10000
Mínimo:2
Favorita
Description: The IRS2092STRPBF is an advanced high voltage, high speed, and high performance gate driver IC designed for use with N-channel MOSFETs and IGBTs in power conversion applications. Feature
Depósito:5000
Mínimo:1
Favorita
The BTS721L1 is a high-side power switch manufactured by Infineon Technologies. It is a monolithic integrated circuit with a SOIC-20 package. It is designed to control the power supply of automotive l
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:1
Favorita
Description: The Infineon Technologies IRFP3710PBF is a N-channel MOSFET designed for high-current switching applications. It is a high-performance power MOSFET with a maximum drain-source voltage of
Depósito:10000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.