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Description
Igbt Modules High Power Switching Use Insulated Type
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Some Part number from the same manufacture
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
CM75DY-24H Igbt Modules High Power Switching Use Insulated Type |
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CM75TU-12H Igbt Modules High Power Switching Use Insulated Type |
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M306V0EE-FP : Single-chip 16-bit CMOS Microcomputer With Closed Caption Decoder & On-screen Display Controller M37210M3 : CISC->740 (Mitsubishi) Single-chip 8-bit CMOS Microcomputer For Voltage Synthsiser And On-screen Display Controller M38065M6-XXXFP : RAM Size: 768bytes; Single-chip 8-bit CMOS Microcomputer M38066EE-XXXFS : RAM Size: 896bytes; Single-chip 8-bit CMOS Microcomputer M38222M2MXXXFP : RAM Size: 384 Bytes; Single-chip 8-bit CMOS Microcomputer M38272M4-XXXGP : Single-chip 8-bit CMOS Microcomputer M38748E4F-XXXFS : Single-chip 8-bit CMOS Microcomputer MH16S72APHB : 1g (16mx72) Sdram ML9SM31-02-16 : Ingaasp Dfb-laser Diode WITH EA Modulator M38192E7-XXXFP : Single-chip 8-bit CMOS Microcomputer |
Same catergory
Same catergory |
2SD1366A : Small Signal General Purpose Transistor. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. BZV854V3 : Silicon Planar Power Zener Diodes. Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltage are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request. DIM ENSIONS DIM inches Min. 1.102 Max. 0.110 0.031 Min. 28.0 mm Max. 2.8 0.8 Note Zener current see Table "Characteristics". FS10KM-2 : Type = Trench Gate ;; Voltage = 100V ;; Rdson = 230 ;; Package = Obsolete ;; Drive Voltage = N/a. FX30ASJ-03 : P-channel Power MOSFET High-speed Switching Use: -30v, -30a. 4V DRIVE VDSS 30V rDS (ON) (MAX) 61m ID. 30A Integrated Fast Recovery Diode (TYP.).50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature. HVR-1X-40B : . Division VRM (kV) 2 For General Purpose For General FBT For High Frequency Multi-layer FBT For Ultra-High Frequency Multi-layer FBT For General Type Microwave Oven For Inverter Type Microwave Oven Marking (Cathode Mark) Pattern Color White The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against creeping. IRF7379 : 30V Dual N- And P- Channel HexFET Power MOSFET in a SO-8 Package. Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET. MJ4502 : Power 30A 100V Discrete PNP , Package: TO-204 (TO-3), Pins=2. . for use as an output device in complementary audio amplifiers to 100Watts music power per channel. 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS Rating Symbol VCER VCB Value 100 90 Unit Vdc Adc CollectorEmitter Voltage CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Base Current VCEO VEB 30 7.5 Total. PTF180901E : Gsm/edge RF Power Fet. One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with dB of gain and produces P -1dB. This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated. SD1062 : Power. RF NPN Transistor: 18v. SMV1763-079 : Hyperabrupt Junction Tuning Varactor. Low Series Resistance High Capacitance Ratio at Low Reverse Voltage Ultra Small SC-79 Package Designed for High Volume, Low Cost Battery Applications Available in Tape and Reel Packaging The is a silicon hyperabrupt junction varactor diode specifically designed for 3 V platforms.The specified high capacitance ratio and low RS of this varactor make it attractive. BUK6226-75C : N-channel TrenchMOS FET Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.. D1027UKG4 : 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 70 volts ; Package Type: ROHS COMPLIANT, CERAMIC, DR, 5 PIN ; Number of units in IC: 2. M55342K06B9B76R-TR : RES,SMT,THIN FILM,9.76K OHMS,50WV,.1% +/-TOL,-100,100PPM TC,0805 CASE. s: Category / Application: General Use. SQMR7100KJ : RESISTOR, METAL OXIDE FILM, 7 W, 5 %, 300 ppm, 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 100000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 7 watts. 2J1002 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 10000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Resistance Range: 10000 ohms ; Operating Temperature: -55 to 150 C (-67 to 302 F). 2SJ166-A : 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 50 ohms ; PD: 200 milliwatts ; Package Type: MINIMOLD, SC-59, 3 PIN ; Number of units in IC: 1. 6.3GXA27 : CAP,AL2O3,27UF,6.3VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic. |
222 buyer reviews from India
George Torres
Length of registration:7 years
The CM75DY-12H integrated circuit from Utsource is a high-performance device designed for use in a variety of applications. It features a wide operating temperature range, low power consumption, and a high switching speed. It is also designed to be highly reliable, with a long life expectancy. This makes it an ideal choice for applications that require a reliable and efficient solution.
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03/17/2023
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CM75DY-12H
CM75DY-12H has several brands around the world that may have alternate names for CM75DY-12H due to regional differences or acquisition. CM75DY-12H may also be known as the following names:
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