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CM400HU-24F High Power Switching Use
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CM400HU-24F

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Description

High Power Switching Use

Not found, similar datasheet recommended

  • ECAD Module
  • Manufacturer Part Number: CM400HU-24F
  • Brand: Mitsubis
  • Package / Case: MODULE
  • Category: Discrete Semiconductor
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
  • Supplier Device Package: Module
  • Series: IGBTMOD?
  • Power - Max: 1600W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • NTC Thermistor: No
  • Mounting Type: Chassis Mount
  • Input Capacitance (Cies) @ Vce: 160nF @ 10V
  • Input: Standard
  • IGBT Type: Trench
  • Current - Collector Cutoff (Max): 2mA
  • Current - Collector (Ic) (Max): 400A
  • Configuration: Single

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • The CM400HU-24F is a power module manufactured by Mitsubishi. It is designed for use in motor control applications, such as AC servo motors, and is rated for 400A, 24V. It features a built-in current sensor, overcurrent protection, and overvoltage protection. It is designed to be used in a wide range of applications, including industrial automation, robotics, and automotive. (For reference only)

Preview of the first 3 pages of the data sheet

  • CM400HU-24F's pdf picture 1
  • CM400HU-24F's pdf picture 2
  • CM400HU-24F's pdf picture 3

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E35A2CBR : Alternator Diode. = Alternator Diode (Negative) ;; Package = B-pf. °§Average Forward Current : IO=35A. °§Repetive Peak Reverse Voltage : VRRM=200V CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range SYMBOL IF(AV) IFSM VRRM Tj Tstg RATING 200 -40°215 UNIT A V CHARACTERISTIC Forward Voltage Reverse Voltage Reverse Current Transient.

G3R-OA202SZN5/24DC : Relay Solid State. Compact SSRs for I/O Interface with High Dielectric Strength Requirements 1 High-speed models with optimum input To Order: Select the part number and add the desired coil voltage rating, (e.g., G3R-IAZR1SN-DC5) Isolation Photocoupler Indicator Yes Response speed --High-speed g (1 kHz) kH ) Low-speed (10 Hz) H ) Logic level Supply voltage to 32 VDC Supply.

MCCD2004S : Package Type : SOT-23, if : , VRM : 300V. Surface Mount SOT-23 Package Capable 350mWatts of Power Dissipation Suited For Applications Requiring High Voltage Capability Marking Code: DB6 Operating Temperature: to +150oC Storage Temperature: to +150oC Typical Thermal Resistance: 357oC/W Junction to Ambient Rating Symbol VR VRRM IO IF IFRM IFSM PD Value Unit V Continuous Reverse Voltage Peak Repetitive.

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050026R8ACMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000068 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.80E-6 microF ; Capacitance Tolerance: 4 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

05002-8R2ABZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 8.20E-6 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

DF3A6.8LCT : 6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Arrangement: Common Anode ; Diode Type: VOLTAGE REGULATOR DIODE ; Package: CST3, 1-1S1C, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

IRFG6110-JQR-BR1 : 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.8000 ohms ; Package Type: HERMETIC SEALED, DIP-14 ; Number of units in IC: 4.

R43120F : 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA. s: Configuration: Single ; Package: DO-8, METAL, DO-8, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 150000 mA ; VRRM: 1200 volts.

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