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Utsource certified used parts
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1. Utsource will inspect the goods, including appearance inspection (no serious damage to the appearance), select qualified and honest suppliers, and ensure 98% qualification rate.
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Description
High Power Switching Use
All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.
Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
CM400HU-24H 400 Amp Igbt Module For High Power Switching Use Insolated Type |
CM450HA-5F 450 Amp Igbt Module For High Power Switching Use Insulated Type |
CM50AD05-12H Medium Power Switching Use Flat Base, Insulated Type |
CM50DU-24H Igbt Modules Medium Power Switching Use Insulated Type |
CM50DY-12H Igbt Modules High Power Switching Use Insulated Type |
CM50DY-24H |
CM50DY-28H |
CM50E3U-24H Igbt Modules Medium Power Switching Use Insulated Type |
CM50MD-12H |
CM50MD1-12H Igbt Modules Medium Power Switching Use Flat-base Type, Insulated Type |
CM50TF-12H Igbt Modules Medium Power Switching Use Insulated Type |
CM50TF-24H Igbt Modulesmedium Power Switching Use Insulated Type |
CM50TF-28H |
CM50TU-24F High Power Switching Use |
CM50TU-24H Igbt Modules Medium Power Switching Use Insulated Type |
CM600DY-34H High Power Switching Use Insulated Type |
CM600E2Y-34H |
CM600HA-12H 600 Amp Igbt Module For High Power Switching Use Insulated Type |
CM600HA-24H |
CM600HA-28H |
CM600HA-5F |
FS18SM-9 : N-channel Power MOSFET High-speed Switching Use: 450v, 18a M38047MA-XXXFP : RAM Size: 1024bytes Single Chip 8-bit CMOS Microcomputer M38226E3HFS : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer M38226MBMXXXGP : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer M38506E2H-SS : RAM Size:896 Bytes; Single-chip 8-bit CMOS Microcomputer M38867EAA-HP : RAM Size: 1024bytes Single Chip 8-bit CMOS Microcomputer M5M5V208KV-12LL-W : 2097152-bit ( 262144-word BY 8-bit ) CMOS Static RAM MF88M1-GNCAVXX : 8/16-bit Data Bus Flash Memory Card MGF0909A : L, S Band Power GAAS Fet ML9XX25 : Pump Lasers |
Same catergory
Same catergory |
2SJ387L : for General Switching. Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. E35A2CBR : Alternator Diode. = Alternator Diode (Negative) ;; Package = B-pf. °§Average Forward Current : IO=35A. °§Repetive Peak Reverse Voltage : VRRM=200V CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range SYMBOL IF(AV) IFSM VRRM Tj Tstg RATING 200 -40°215 UNIT A V CHARACTERISTIC Forward Voltage Reverse Voltage Reverse Current Transient. G3R-OA202SZN5/24DC : Relay Solid State. Compact SSRs for I/O Interface with High Dielectric Strength Requirements 1 High-speed models with optimum input To Order: Select the part number and add the desired coil voltage rating, (e.g., G3R-IAZR1SN-DC5) Isolation Photocoupler Indicator Yes Response speed --High-speed g (1 kHz) kH ) Low-speed (10 Hz) H ) Logic level Supply voltage to 32 VDC Supply. MCCD2004S : Package Type : SOT-23, if : , VRM : 300V. Surface Mount SOT-23 Package Capable 350mWatts of Power Dissipation Suited For Applications Requiring High Voltage Capability Marking Code: DB6 Operating Temperature: to +150oC Storage Temperature: to +150oC Typical Thermal Resistance: 357oC/W Junction to Ambient Rating Symbol VR VRRM IO IF IFRM IFSM PD Value Unit V Continuous Reverse Voltage Peak Repetitive. MPSH10 : VHF/UHF Amplifiers. Small Signal Amplifier Npn, Package: TO-92 (TO-226), Pins=3. MT-5007 : Voltage= 80 ;; Package= PPS-1200. NTE491 : MOSFET, N-ch, Enhancement Mode, High Speed Switch.. NTE491 MOSFET NCh, Enhancement Mode High Speed Switch Absolute Maximum Ratings: DrainSource Voltage, VDS. 60V DrainGate Voltage (RGS = 1M), VDGR. 60V GateSource Voltage, VGS. ±40V Drain Current, ID Continuous. 200mA Pulsed. 500mA Total Device Dissipation (TA = +25°C), PD. 350mW Derate above 25°C. 2.8mW/°C Operating Junction Temperature Range, TJ. to +150°C. TIP110A : Discrete, Transistors, Power Transitors. MRF21060L : 2110–2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFETs The MRF21060LR3 and MRF21060LSR3 are designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. MRF21060L * Typical 2–carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout. 050026R8ACMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000068 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.80E-6 microF ; Capacitance Tolerance: 4 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface. 05002-8R2ABZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 8.20E-6 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology. DF3A6.8LCT : 6.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Arrangement: Common Anode ; Diode Type: VOLTAGE REGULATOR DIODE ; Package: CST3, 1-1S1C, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2. IRFG6110-JQR-BR1 : 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.8000 ohms ; Package Type: HERMETIC SEALED, DIP-14 ; Number of units in IC: 4. R43120F : 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA. s: Configuration: Single ; Package: DO-8, METAL, DO-8, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 150000 mA ; VRRM: 1200 volts. |
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CM400HU-24F
CM400HU-24F has several brands around the world that may have alternate names for CM400HU-24F due to regional differences or acquisition. CM400HU-24F may also be known as the following names:
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