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Product video Product Picture
BSM25GD120DN2 IGBT Modules up to 1200V SixPACK
  • BSM25GD120DN2
  • BSM25GD120DN2
  • BSM25GD120DN2
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BSM25GD120DN2

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Description

IGBT Modules up to 1200V SixPACK

Not found, similar datasheet recommended

  • ECAD Module
  • IGBT Configuration:: Three Phase Full Bridge
  • Brand: Eupec
  • Package / Case: MODULE
  • DC Collector Current:: 35A
  • Collector Emitter Saturation Voltage Vce(on):: 3V
  • Power Dissipation Pd:: 200W
  • Junction Temperature Tj Max:: 125°C
  • Transistor Case Style:: EconoPACK
  • Collector Emitter Voltage V(br)ceo:: 1.2kV

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ECAD Module

Product Attributes

  • Description: BSM25GD120DN2 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 25A collector current Low switching losses High current density Low EMI High frequency operation Low thermal resistance Applications: BSM25GD120DN2 is suitable for applications such as motor control, welding, UPS, and power supplies. It can also be used in high-frequency switching applications. (For reference only)

Introduce this module:

The BSM25GD120DN2E3224 is power module IGBT that can easily be used in the applications which needs the requirements of power electronics. With free wheel diode structure you do not have to worry about the over voltage or short circuit problems. Thanks to free-wheel diode structure this module will give you protection from these types of problems

 

Some Core parameters of the module.

   Collector-emitter voltage : VCE 1200V

   Collector-gate voltage: (RGE = 20kΩ): 1200

   Gate-emitter voltage VGE : ± 20V

   DC collector current (Ic) TC = 25 : 35A

   DC collector current (Ic) TC = 80 : 25A

   Pulsed collector current, (tp = 1ms TC = 25) : 70A

   Pulsed collector current, (tp = 1ms TC = 80) : 50A

   Power dissipation per IGBT (TC = 25) = 200Watt

   Thermal resistance, chip case : ≤ 0.6KW

   Diode thermal resistance, chip case : RthJCD ≤ 1kW

   Gate Threshold Voltage (VGE = VCE, IC = 1mA) : 4.5V to 6.5V

   Collector-emitter saturation voltage

  VGE = 15 V, IC = 25A, Tj = 25 : 2.5V to 3V

  VGE = 15 V, IC = 25A, Tj = 125 : 3.1 to 3.7V

   Zero gate voltage collector current

  VCE = 1200 V, VGE = 0V, Tj = 25 : 0.5mA to 0.8mA

  VCE = 1200 V, VGE = 0V, Tj = 125 : 2.0mA

   Gate-emitter leakage current (VGE = 20V, VCE = 0V) :  180nA

   Transconductance (VCE = 20V, IC = 25A) : 10S

   Input capacitance (VCE = 25V, VGE = 0V, f = 1 MHz) : 1650pF

   Output capacitance (VCE = 25V, VGE = 0V, f = 1 MHz) : 250pF

   Reverse Transfer capacitance (VCE = 25V, VGE = 0V, f = 1MHz) : 110pF
   Turn ON delay time (VCC = 600V, VGE = 15V, IC = 25A RGon = 47Ω) : 75nS to 150nS

   Rise time (VCC = 600 V, VGE = 15V, IC = 25A RGon = 47Ω) : 65nS to 130nS

   Turn-off delay time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 400nS to 600nS

   Fall time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 50nS to 100nS

 

How it use: 

Three phase motor controller using IGBT

SupplierFile/202006/03/f_1cd70e74ed4c42568216f06012f682a8.png

DC Motor driver using Chopper Circuit using IGBT

SupplierFile/202006/03/f_ddf6dad25b0e4f618c0fc38557dbb71e.png


Preview of the first 3 pages of the data sheet

  • BSM25GD120DN2's pdf picture 1
  • BSM25GD120DN2's pdf picture 2
  • BSM25GD120DN2's pdf picture 3

Related products with the same datasheet

BSM25GD120DN2E3224
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Product Reviews

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    Nicole Nelson

    BSM25GD120DN2E3224
    us United States

    Length of registration:7 years

    This integrated circuit is great! It has a high power rating and is very reliable. It is also easy to install and use. The customer service is also excellent. Highly recommend this product!

    0

    0

    Reply0

    03/17/2023

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    Henry F. Webb

    BSM25GD120DN2E3224
    us United States Miami

    Length of registration:1 years

    Excellent seller. This component arrives in time and well protected. I recommend this business for future purchases

    0

    0

    Reply0

    08/20/2016

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