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Description
HIGH POWER SWITCHING USE INSULATED TYPE
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Manufactured by Mitsubishi QM75DY-H is 75 A rated transistor module of Insulated Type. The module has two transistors pairs, one in Common Collector-Emitter configuration, with collector-emitter voltage rating of 600V and DC Current Gain of 75. Junction temperature range is -40°C to +150°C with Isolation Voltage capacity of 2500V. hFE rating of the module makes it the h parameter for the DC or large signal steady state forward current gain. Following are the Maximum Rating for the module @ Junction Temperature of 25°C;
1- Collector-emitter Voltage of 600V
2- Collector-base voltage with Emitter in open state 600V
3- Emitter-base voltage with open collector is 7V
4- Collector Current (DC) 75A
5- Base Current (DC) 4.5A
Junction to case thermal resistance of the transistor part is .35°C whereas for Diode Part it is 1.3°C per watt.
Switching time with Vcc of 300V and 75A collector current is 12 microseconds, making it use feasible in inverters, Servo drives, DC motor Controllers, NC equipment and welding setups. As when using the transistor as a switch, a small Base current controls a much larger Collector load current. When using transistors to switch inductive loads such as relays and solenoids, a “Flywheel Diode” is used. This package is complete for high power switching.
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10000 buyer reviews from United States
Linda Moore
Length of registration:7 years
The QM75DY-HB integrated circuit from Utsource is a high-performance device that is designed for use in industrial applications. It features a wide operating temperature range of -40°C to +85°C and is rated for a maximum current of 75A. It also has a high switching frequency of up to 1MHz, making it suitable for high-speed applications. Additionally, it has a low on-resistance of 0.2Ω, making it
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03/17/2023
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QM75DY-H
QM75DY-H has several brands around the world that may have alternate names for QM75DY-H due to regional differences or acquisition. QM75DY-H may also be known as the following names:
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Unit Price:14.79600
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