Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
- Channel Type: N
- Brand: Fairchild
- DateCode: 10+PBF
- Package / Case: SOT-23
- Maximum Continuous Drain Current: 500 mA
- Maximum Drain Source Voltage: 25 V
- Maximum Drain Source Resistance: 9 Ω
- Maximum Gate Threshold Voltage: 1.06V
- Minimum Gate Threshold Voltage: 0.7V
- Maximum Gate Source Voltage: +8 V
- Package Type: SOT-23
- Mounting Type: Surface Mount
- Pin Count: 3
- Transistor Configuration: Single
- Channel Mode: Enhancement
- Category: Small Signal
- Maximum Power Dissipation: 350 mW
- Typical Turn-Off Delay Time: 3.5 ns
- Height: 0.93mm
- Typical Gate Charge @ Vgs: 0.49 nC @ 4.5 V
- Minimum Operating Temperature: -55 °C
- Number of Elements per Chip: 1
- Width: 1.3mm
- Typical Input Capacitance @ Vds: 9.5 pF @ 10 V
- Typical Turn-On Delay Time: 3.2 ns
- Transistor Material: Si
- Dimensions: 2.92 x 1.3 x 0.93mm
- Forward Diode Voltage: 1.2V
- Length: 2.92mm
- Forward Transconductance: 0.2S
- Maximum Operating Temperature: +150 °C
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Length of registration:6 years
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Length of registration:10 years
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- FDV301N Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
FDV301N has several brands around the world that may have alternate names for FDV301N due to regional differences or acquisition. FDV301N may also be known as the following names:
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Total products: 2343Total sales: 393