QFET? N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor Fairchild Semiconductor’s new QFET? planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
- Channel Type: N
- Brand: Fairchild
- DateCode: 18+
- Package / Case: TO-220
- Maximum Continuous Drain Current: 6.6 A
- Maximum Drain Source Voltage: 800 V
- Maximum Drain Source Resistance: 1.9 Ω
- Minimum Gate Threshold Voltage: 3V
- Maximum Gate Source Voltage: -30 V, +30 V
- Package Type: TO-220AB
- Mounting Type: Through Hole
- Pin Count: 3
- Transistor Configuration: Single
- Channel Mode: Enhancement
- Category: Power MOSFET
- Maximum Power Dissipation: 167 W
- Typical Gate Charge @ Vgs: 27 nC @ 10 V
- Height: 9.4mm
- Series: QFET
- Typical Input Capacitance @ Vds: 1290 pF @ 25 V
- Maximum Operating Temperature: +150 °C
- Length: 10.1mm
- Dimensions: 10.1 x 4.7 x 9.4mm
- Transistor Material: Si
- Typical Turn-On Delay Time: 35 ns
- Width: 4.7mm
- Number of Elements per Chip: 1
- Minimum Operating Temperature: -55 °C
- Typical Turn-Off Delay Time: 50 ns
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mauricio galvez ve17343
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Very satisfied with
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Kataev Mikhail Georgievich
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Mexico Encarnacion de Diaz
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excelente muy buena calidad
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- FQP7N80C QFET? N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor Fairchild Semiconductor’s new QFET? planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
FQP7N80C has several brands around the world that may have alternate names for FQP7N80C due to regional differences or acquisition. FQP7N80C may also be known as the following names:
Stock Status: 8500
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