≥1:
US $3.28800
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ 주소추가
새로운화물운송주소
* 추적 정보를 제때받을 수 있도록 휴대폰 번호를 정확하게 입력하십시오.
국가 코드INFINEON
당신의검색:Infineon,관련제품수:47个
Description: The BTS432E2E3062ABUMA1 is a N-channel enhancement mode Field-Effect Transistor (FET) with a low on-state resistance. Features: * Low on-state resistance * Low gate charge * Low input/ou
재고:10000
최소:2
즐겨 찾기
재고:10000
최소:2
즐겨 찾기
재고:10000
최소:1
즐겨 찾기
재고:10000
최소:1
즐겨 찾기
Description: The SPW20N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage, high speed, low gate charge and low on-resistance MOSFET. It is suitable for use in a variety of ap
재고:5000
최소:1
즐겨 찾기
Description: SPP20N60C3 is a N-channel MOSFET produced by Infineon Technologies. It is a high voltage, high speed, low on-resistance MOSFET with a maximum drain-source voltage of 600V and a maximum dr
재고:10000
최소:1
즐겨 찾기
Description: The IRLU3110ZPBF is a N-Channel Power MOSFET from Infineon Technologies. It is designed to be used in a wide range of applications such as DC-DC converters, motor drives, and power manag
재고:5000
최소:1
즐겨 찾기
Description: The SPA04N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage and high current device with a maximum drain-source voltage of 600V and a maximum drain current of 4A
재고:10000
최소:1
즐겨 찾기
Description: The Infineon Technologies IRFB4019PBF is a N-channel power MOSFET designed for use in high-power switching applications. It is a high-performance device with low on-state resistance, fast
재고:10000
최소:1
즐겨 찾기
재고:10000
최소:2
즐겨 찾기
재고:10000
최소:1
즐겨 찾기
재고:10000
최소:1
즐겨 찾기
Description: The IKW40T120 is a 1200V, 40A, three-phase insulated gate bipolar transistor (IGBT) module from Infineon Technologies. It is designed for use in motor control, UPS, welding and other indu
재고:2000
최소:1
즐겨 찾기
Description: The BTS723GWXUMA1 is a 3-phase Smart Low-Side Power Switch from Infineon Technologies. It is a monolithic integrated circuit designed for use in automotive and industrial applications. F
재고:10000
최소:2
즐겨 찾기
Description: The IRF640NPBF is a N-channel enhancement mode power MOSFET produced by Infineon Technologies. It is housed in a TO-220-3 package and is designed for use in power switching applications.
재고:10000
최소:2
즐겨 찾기
Description: The IRF3205ZPBF is a N-channel MOSFET from Infineon Technologies. It is designed for use in high-current switching applications. It has a maximum drain-source voltage of 100V, a maximum d
재고:10000
최소:2
즐겨 찾기
Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
재고:10000
최소:1
즐겨 찾기
Description: The IR2010STRPBF is an integrated circuit from Infineon Technologies. It is a high-voltage, high-speed, low-side switch designed for automotive applications. Features: * High voltage ope
재고:10000
최소:2
즐겨 찾기
재고:10000
최소:4
즐겨 찾기
생산 전문가 중지, 우리는 유지 보수 회사를 용이하게하기 위해 생산이 중단되고 찾기 어려운 많은 전자 부품을 제공 할 수 있습니다