IGBT | Page 16 | UTSOURCE

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Used and refurbished parts guaranteed can work well

CM150RX1-12A

MODULE

Mitsubishi

IGBT MODULES HIGH POWER SWITCHING USE

Utsource

≥1:

Mex $3126.58560

Mex $2938.99046

≥2:

Mex $3126.58560

Mex $2938.99046

≥5:

Mex $2918.14656

Mex $2743.05777

≥10:

Mex $2918.14656

Mex $2743.05777

≥20:

Mex $2918.14656

Mex $2743.05777

≥30:

Mex $2918.14656

Mex $2743.05777

≥50:

Mex $2918.14656

Mex $2743.05777

≥100:

Mex $2897.30266

Mex $2723.46450

≥500:

Mex $2876.45875

Mex $2703.87123

From: Mex $2876.45875

MITSUBISHI CM150RX1-12A is a power module with a voltage rating of 1200V and a current rating of 150A. It is designed for use in medium-voltage applications such as motor drives, power supplies, and U

Depósito:2000

Mínimo:1

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MG25Q6ES51

MODULE

Toshiba America Electronic Components

Vces (volts) = 1200 ;; Ic (amps) = 25 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6

Utsource

≥1:

Mex $1140.28416

Mex $1071.86711

≥2:

Mex $1140.28416

Mex $1071.86711

≥5:

Mex $1064.26522

Mex $1000.40930

≥10:

Mex $1064.26522

Mex $1000.40930

≥20:

Mex $1064.26522

Mex $1000.40930

≥30:

Mex $1064.26522

Mex $1000.40930

≥50:

Mex $1064.26522

Mex $1000.40930

≥100:

Mex $1056.66332

Mex $993.26352

≥500:

Mex $1049.06143

Mex $986.11774

From: Mex $1049.06143

Description: The MG25Q6ES51 is a 25A, 600V N-channel MOSFET module with a low on-resistance. It is designed for use in high-efficiency power supplies, motor drives, and other power switching applicati

Depósito:2000

Mínimo:1

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BSM100GP60

MODULE

Eupec

IGBT-Modules

Utsource

≥1:

Mex $1250.63424

Mex $1175.59619

≥2:

Mex $1250.63424

Mex $1175.59619

≥5:

Mex $1167.25862

Mex $1097.22311

≥10:

Mex $1167.25862

Mex $1097.22311

≥20:

Mex $1167.25862

Mex $1097.22311

≥30:

Mex $1167.25862

Mex $1097.22311

≥50:

Mex $1167.25862

Mex $1097.22311

≥100:

Mex $1158.92106

Mex $1089.38580

≥500:

Mex $1150.58350

Mex $1081.54849

From: Mex $1150.58350

Description: The BSM100GP60 is a high-performance insulated-gate bipolar transistor (IGBT) module from EUPEC. It is designed for use in high-power applications such as motor drives, welding, and unint

Depósito:2000

Mínimo:1

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MG25Q1BS11

MODULE

Toshiba

TRANS IGBT MODULE N-CH 1200V 25A 3(2-33D2A)

Utsource

≥1:

Mex $441.40032

Mex $414.91630

≥2:

Mex $441.40032

Mex $414.91630

≥5:

Mex $426.68698

Mex $401.08576

≥10:

Mex $420.80164

Mex $395.55354

≥20:

Mex $417.85897

Mex $392.78743

≥30:

Mex $411.97363

Mex $387.25521

≥50:

Mex $411.97363

Mex $387.25521

≥100:

Mex $409.03096

Mex $384.48911

≥500:

Mex $406.08829

Mex $381.72300

From: Mex $406.08829

Description: This is a 25A, 600V, three-phase inverter module from Toshiba. Features: High-speed switching Low loss High reliability Low noise High efficiency High surge capability

Depósito:2000

Mínimo:1

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CM200DU-24F

MODULE

Mitsubis

HIGH POWER SWITCHING USE

Utsource

≥1:

Mex $1287.41760

Mex $1210.17254

≥2:

Mex $1287.41760

Mex $1210.17254

≥5:

Mex $1201.58976

Mex $1129.49437

≥10:

Mex $1201.58976

Mex $1129.49437

≥20:

Mex $1201.58976

Mex $1129.49437

≥30:

Mex $1201.58976

Mex $1129.49437

≥50:

Mex $1201.58976

Mex $1129.49437

≥100:

Mex $1193.00698

Mex $1121.42656

≥500:

Mex $1184.42419

Mex $1113.35874

From: Mex $1184.42419

The CM200DU-24F is a module manufactured by Mitsubishi. It is a power supply module that is used to convert AC power to DC power. It is designed to provide a reliable and cost-effective power supply s

Depósito:2000

Mínimo:1

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BSM50GD60DLC

MODULE

Eupec

High Voltage Rectifer Diodes

Utsource

≥1:

Mex $1082.17329

Mex $1017.24289

≥2:

Mex $1082.17329

Mex $1017.24289

≥5:

Mex $1010.02842

Mex $949.42671

≥10:

Mex $1010.02842

Mex $949.42671

≥20:

Mex $1010.02842

Mex $949.42671

≥30:

Mex $1010.02842

Mex $949.42671

≥50:

Mex $1010.02842

Mex $949.42671

≥100:

Mex $1002.81393

Mex $942.64508

≥500:

Mex $995.59944

Mex $935.86348

From: Mex $995.59944

Description: The BSM50GD60DLC is an insulated-gate bipolar transistor module from EUPEC. It is designed for use in motor drives, UPS, and other industrial applications. Features: High power densit

Depósito:2000

Mínimo:1

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SKM100GB128D

MODULE

Semikron

SPT IGBT Module

Utsource

≥1:

Mex $570.62919

Mex $536.39143

≥2:

Mex $570.62919

Mex $536.39143

≥5:

Mex $551.60822

Mex $518.51173

≥10:

Mex $543.99983

Mex $511.35984

≥20:

Mex $540.19564

Mex $507.78391

≥30:

Mex $532.58725

Mex $500.63203

≥50:

Mex $532.58725

Mex $500.63203

≥100:

Mex $528.78304

Mex $497.05607

≥500:

Mex $524.97886

Mex $493.48011

From: Mex $524.97886

Description: The SKM100GB128D is a high-performance, high-power insulated-gate bipolar transistor (IGBT) module manufactured by Semikron. It is designed to provide high-power switching and fast switch

Depósito:2000

Mínimo:1

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Presupuesto

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FF150R12KE3G

MODULE

Eupec

62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode

Utsource

≥1:

Mex $1548.85065

Mex $1455.91960

≥2:

Mex $1548.85065

Mex $1455.91960

≥5:

Mex $1445.59394

Mex $1358.85832

≥10:

Mex $1445.59394

Mex $1358.85832

≥20:

Mex $1445.59394

Mex $1358.85832

≥30:

Mex $1445.59394

Mex $1358.85832

≥50:

Mex $1445.59394

Mex $1358.85832

≥100:

Mex $1435.26827

Mex $1349.15217

≥500:

Mex $1424.94261

Mex $1339.44604

From: Mex $1424.94261

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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SKM195GB126DN

MODULE

Semikron

Trench IGBT Module

Utsource

≥1:

Mex $865.73863

Mex $813.79432

≥2:

Mex $865.73863

Mex $813.79432

≥5:

Mex $836.88069

Mex $786.66784

≥10:

Mex $825.33750

Mex $775.81724

≥20:

Mex $819.56590

Mex $770.39194

≥30:

Mex $808.02272

Mex $759.54137

≥50:

Mex $808.02272

Mex $759.54137

≥100:

Mex $802.25114

Mex $754.11607

≥500:

Mex $796.47954

Mex $748.69077

From: Mex $796.47954

Description: The SKM195GB126DN is a three-phase bridge rectifier module from Semikron. Features: 1200V blocking voltage Low forward voltage drop High surge current capability Low thermal resista

Depósito:2000

Mínimo:1

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Presupuesto

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Used and refurbished parts guaranteed can work well

Fp20r06kl4

MODULE

Eupec

04+

IGBT-Module

Utsource

≥1:

Mex $404.61696

Mex $380.33994

≥2:

Mex $404.61696

Mex $380.33994

≥5:

Mex $391.12973

Mex $367.66194

≥10:

Mex $385.73484

Mex $362.59075

≥20:

Mex $383.03739

Mex $360.05515

≥30:

Mex $377.64250

Mex $354.98395

≥50:

Mex $377.64250

Mex $354.98395

≥100:

Mex $374.94505

Mex $352.44835

≥500:

Mex $372.24760

Mex $349.91275

From: Mex $372.24760

Description: The FP20R06KL4 is an insulated gate bipolar transistor (IGBT) module from Eupec. It is a three-phase, full-bridge module with an integrated freewheeling diode. Features: Rated voltage:

Depósito:2000

Mínimo:1

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Presupuesto

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FZ400R12KS4

MODULE

Infineon/eupec

IGBT-Module / IGBT-inverter

Utsource

≥1:

Mex $1765.60128

Mex $1659.66520

≥2:

Mex $1765.60128

Mex $1659.66520

≥5:

Mex $1647.89453

Mex $1549.02086

≥10:

Mex $1647.89453

Mex $1549.02086

≥20:

Mex $1647.89453

Mex $1549.02086

≥30:

Mex $1647.89453

Mex $1549.02086

≥50:

Mex $1647.89453

Mex $1549.02086

≥100:

Mex $1636.12385

Mex $1537.95642

≥500:

Mex $1624.35318

Mex $1526.89199

From: Mex $1624.35318

The FZ400R12KS4 is a module manufactured by Infineon/Eupec. It is an insulated gate bipolar transistor (IGBT) module designed for use in medium-voltage applications. It features a maximum collector-em

Depósito:2000

Mínimo:1

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Presupuesto

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BSM50GD120DN2-B10

MODULE

Eupec

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

Utsource

≥1:

Mex $1358.32496

Mex $1276.82546

≥2:

Mex $1358.32496

Mex $1276.82546

≥5:

Mex $1267.76996

Mex $1191.70377

≥10:

Mex $1267.76996

Mex $1191.70377

≥20:

Mex $1267.76996

Mex $1191.70377

≥30:

Mex $1267.76996

Mex $1191.70377

≥50:

Mex $1267.76996

Mex $1191.70377

≥100:

Mex $1258.71447

Mex $1183.19161

≥500:

Mex $1249.65897

Mex $1174.67942

From: Mex $1249.65897

Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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BSM150GB60DLC

MODULE

Eupec

00+

IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 150.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;

Utsource

≥1:

Mex $441.40032

Mex $414.91630

≥2:

Mex $441.40032

Mex $414.91630

≥5:

Mex $426.68698

Mex $401.08576

≥10:

Mex $420.80164

Mex $395.55354

≥20:

Mex $417.85897

Mex $392.78743

≥30:

Mex $411.97363

Mex $387.25521

≥50:

Mex $411.97363

Mex $387.25521

≥100:

Mex $409.03096

Mex $384.48911

≥500:

Mex $406.08829

Mex $381.72300

From: Mex $406.08829

BSM150GB60DLC is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a maximum current rating of 150A and a maximum voltage rating of 600V. It is designed for

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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FP75R12KT3

MODULE

Eupec

10+

IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM 3;

Utsource

≥1:

Mex $1141.25838

Mex $1072.78287

≥2:

Mex $1141.25838

Mex $1072.78287

≥5:

Mex $1103.21644

Mex $1037.02346

≥10:

Mex $1087.99965

Mex $1022.71969

≥20:

Mex $1080.39126

Mex $1015.56777

≥30:

Mex $1065.17448

Mex $1001.26400

≥50:

Mex $1065.17448

Mex $1001.26400

≥100:

Mex $1057.56611

Mex $994.11214

≥500:

Mex $1049.95772

Mex $986.96025

From: Mex $1049.95772

Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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Used and refurbished parts guaranteed can work well

BSM20GP60

MODULE

Eupec

IGBT-Modules

Utsource

≥1:

Mex $551.75040

Mex $518.64538

≥2:

Mex $551.75040

Mex $518.64538

≥5:

Mex $533.35872

Mex $501.35720

≥10:

Mex $526.00205

Mex $494.44193

≥20:

Mex $522.32371

Mex $490.98429

≥30:

Mex $514.96704

Mex $484.06902

≥50:

Mex $514.96704

Mex $484.06902

≥100:

Mex $511.28870

Mex $480.61138

≥500:

Mex $507.61037

Mex $477.15375

From: Mex $507.61037

Description: The BSM20GP60 is a high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 20A collector current Low on-state volta

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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CM100DY-12H

MODULE

Mitsubis

HIGH POWER SWITCHING USE INSULATED TYPE

Utsource

≥1:

Mex $535.60996

Mex $503.47337

≥2:

Mex $535.60996

Mex $503.47337

≥5:

Mex $517.75630

Mex $486.69091

≥10:

Mex $510.61483

Mex $479.97795

≥20:

Mex $507.04410

Mex $476.62147

≥30:

Mex $499.90264

Mex $469.90848

≥50:

Mex $499.90264

Mex $469.90848

≥100:

Mex $496.33190

Mex $466.55200

≥500:

Mex $492.76117

Mex $463.19549

From: Mex $492.76117

The Mitsubishi CM100DY-12H is a 100A, IGBT module. It is designed for use in motor drives and other applications requiring high power control and fast switching times. It has a low on-state voltage dr

Depósito:2000

Mínimo:1

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Presupuesto

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FSAM30SH60A

MODULE

Fairchil

15+

16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor

Utsource

≥1:

Mex $285.67794

Mex $268.53726

≥5:

Mex $269.80695

Mex $253.61855

≥10:

Mex $261.87155

Mex $246.15927

≥20:

Mex $253.93596

Mex $238.69980

≥50:

Mex $246.00037

Mex $231.24033

≥100:

Mex $242.82636

Mex $228.25679

≥200:

Mex $238.06497

Mex $223.78106

≥500:

Mex $234.89076

Mex $220.79732

≥1000:

Mex $230.12955

Mex $216.32179

From: Mex $230.12955

Fairchild FSAM30SH60A is a 600V Fast Switching Diode Module that features high surge capability and low power losses. It is designed for use in switching applications such as motor control, welding an

Depósito:2000

Mínimo:1

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Presupuesto

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FS25R12W1T4

MODULE

Eupec

EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Utsource

≥1:

Mex $652.14764

Mex $613.01878

≥2:

Mex $652.14764

Mex $613.01878

≥5:

Mex $630.40938

Mex $592.58481

≥10:

Mex $621.71409

Mex $584.41125

≥20:

Mex $617.36645

Mex $580.32445

≥30:

Mex $608.67113

Mex $572.15087

≥50:

Mex $608.67113

Mex $572.15087

≥100:

Mex $604.32348

Mex $568.06407

≥500:

Mex $599.97584

Mex $563.97729

From: Mex $599.97584

FS25R12W1T4 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a maximum collector-emitter voltage of 1200V and a maximum collector c

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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CM50MXB2-24A

MODULE

MIT

04+

IGBT MODULES HIGH POWER SWITCHING USE

Utsource

≥1:

Mex $1735.11084

Mex $1631.00420

≥2:

Mex $1735.11084

Mex $1631.00420

≥5:

Mex $1619.43679

Mex $1522.27057

≥10:

Mex $1619.43679

Mex $1522.27057

≥20:

Mex $1619.43679

Mex $1522.27057

≥30:

Mex $1619.43679

Mex $1522.27057

≥50:

Mex $1619.43679

Mex $1522.27057

≥100:

Mex $1607.86938

Mex $1511.39722

≥500:

Mex $1596.30199

Mex $1500.52386

From: Mex $1596.30199

Description: The CM50MXB2-24A is a module from MIT that is designed for use in a wide range of applications. It is a 50A, 24V DC module with a maximum current of 50A and a maximum voltage of 24V DC.

Depósito:2000

Mínimo:1

Favorita

Presupuesto