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Description: The CM600DU-24NFH is a 600V, 24A, IGBT Module from Mitsubishi. Features: High speed switching Low on-state voltage Low power loss High reliability Easy to mount Applications: The C
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG50J2YS45 is a 50A, 600V, three-phase IGBT Module manufactured by Toshiba America Electronic Components. Features: Low switching loss High speed switching Low noise High r
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
00+
IGBT Modules up to 1200V SixPACK; Package: AG-ECONOPP-1; IC max: 450.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EconoPACK? +;
FS450R12KE3 is an insulated-gate bipolar power transistor (IGBT) module manufactured by Eupec. It is a 3-phase, half-bridge configuration rated at 450A, 12kV. It has an inductance of 0.8mH and a leaka
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG200J2YS40 is a 200A, 600V, three-phase insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. Features: Low saturation voltage High speed
Depósito:2000
Mínimo:1
Favorita
Description: The MG300Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. It is designed for use in motor control applications. Features: High-spe
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The CM200DY-12NF is a 1200V, 200A, N-channel IGBT module from Mitsubishi Electric. Features: Low saturation voltage High speed switching High current capacity Low noise High reliabi
Depósito:2000
Mínimo:1
Favorita
Description: This is a power module from Mitsubishi Electric. It is a three-phase inverter module with a rated output of 75kW. Features: Rated output of 75kW Three-phase inverter Low noise and
Depósito:2000
Mínimo:1
Favorita
Description: This is a Toshiba IGBT Module. Features: 200A, 600V Low on-state voltage Low switching loss Low noise High speed switching High reliability High surge capability Applications:
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The SKM200GB124D is a three-phase bridge rectifier module from Semikron. It is designed for use in high power applications and features a high current capability of 200A. Features: High
Depósito:2000
Mínimo:1
Favorita
Description: The MG600Q2YS60A is an IGBT module designed and manufactured by Mitsubishi Electric. It is a 600V/60A device with a maximum collector-emitter voltage of 600V and a maximum collector curre
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The FS300R12KE3 is a three-phase insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in motor control, uninterruptible power supply (UPS) systems
Depósito:2000
Mínimo:1
Favorita
MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 25 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG25N6ES42 is a 25A, 600V N-channel IGBT module from Toshiba America Electronic Components. Features: Low on-state resistance Low switching losses High speed switching High
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.