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Home > Elec-component > Modules > IGBT
SKM145GB066D is a module manufactured by Semikon. It is a three-phase bridge rectifier module with a rated current of 145A and a maximum reverse voltage of 600V. It is designed for use in motor drives
Stock:2000
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Eupec
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Description: BSM50GB170DN2 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: Maximum collector-emitter voltage of 1700V Maximum collector current of 50A Maximu
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
04+
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The Infineon BSM100GB120DN2E3256 is a 1200V/100A IGBT module designed for high power switching applications. It features a high power density, low switching losses, and a high current carrying capacit
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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BSM20GP-60 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with an integrated diode. It has a voltage rating of 600V and a current rating of 20A. The BSM20
Stock:2000
Minimum:1
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SKM75GB063D is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in power converters, motor drives, and other power electronic applications. Features: Maximum
Stock:2000
Minimum:1
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VUB72-16NO1 is a module manufactured by IXYS. It is a three-phase bridge rectifier module with a voltage rating of 1600V and a current rating of 72A. It is designed for use in motor control and power
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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SKM50GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is a 1200V, 50A module with a forward current of 50A and a reverse voltage of 1200V. It is designed for use in motor d
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
Description: The MG15J6ES40 is a 15A, 600V IGBT module from Toshiba America Electronic Components. Features: High speed switching Low saturation voltage Low power loss High reliability Lo
Stock:2000
Minimum:1
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MODULE
Eupec
62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
The FZ900R12KF5 is a 1200V, 900A, IGBT module manufactured by EUPEC. It is designed to be used in high-power applications such as motor drives, UPS systems, and solar inverters. Features: 1200V, 900
Stock:2000
Minimum:1
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Description: SKM400GAL125D is a 1200V, 400A, 3-phase IGBT module manufactured by Semikron. It is designed for use in motor control, UPS, welding, and other high-power applications. Features: High-s
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Stock:2000
Minimum:1
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Description: CM30TF-12H is a Mitsubishi inverter module produced by Mitsubishi Electric. Features: The CM30TF-12H is a single-phase, 200V-class three-level inverter module that can handle up to 12kW
Stock:2000
Minimum:1
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SKM150GB12V is a module manufactured by Semikron. It is a thyristor/diode module with a blocking voltage of 1200V and a current rating of 150A. It is designed for use in high-power switching applicati
Stock:2000
Minimum:1
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Description: SKM150GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed to be used in applications such as AC/DC power supplies, DC/DC converters, and motor drives.
Stock:2000
Minimum:1
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Description: This is a SEMIKRON module. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1200V and a maximum collector current of 40
Stock:2000
Minimum:1
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MODULE
Toshiba
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Description: This is a module manufactured by Toshiba. It is a power module with a voltage rating of 600V and a current rating of 10A. Features: High-speed switching Low loss Low EMI noise Hi
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 15 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG15N6ES42 is a 15A, 600V, N-channel IGBT module manufactured by Toshiba America Electronic Components. Features: Low saturation voltage Low gate charge High speed switching
Stock:2000
Minimum:1
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Description: This is a three-phase insulated gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 75A collector current Low on-state voltage drop High switching spee
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company