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Description
600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Title
600 V single high-side gate driver IC with single input
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Features
● Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
● Gate drive supply range from 10 to 20V
● Under voltage lockout
● CMOS Schmitt-triggered inputs with pull-down
● Output in phase with input (IR2117) or out of phase with input (IR2118)
● Also available LEAD-FREE
Description
The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
Preview of the first 3 pages of the data sheet
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Gate drive supply range from to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of
DescriptionThe is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates to 600 volts.
This/These diagram(s) show electrical connections only.Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
High side floating supply offset voltageThe input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Logic supply voltage Logic input voltage Ambient temperature
Note 1: Logic operational for to +600V. Logic state held for -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).
VBIAS (VCC, VBS) 1000 pF and = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall timeVBIAS (VCC, VBS) = 15V and = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
input voltage - logic "1" (IR2117) logic "0" (IR2118) Input voltage - logic "0" (IR2117) logic "1" (IR2118) High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC Supply Current Logic "1" input bias current (IR2117)
(IR2118) VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current
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IR2117S
IR2117S has several brands around the world that may have alternate names for IR2117S due to regional differences or acquisition. IR2117S may also be known as the following names:
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