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Utsource certified used parts
Utsource certified used parts provide the following guarantees:
1. Utsource will inspect the goods, including appearance inspection (no serious damage to the appearance), select qualified and honest suppliers, and ensure 98% qualification rate.
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Description
Type = Igbt Module
Voltage = 1200V
Current = 75A
Circuit Configuration = Six Pac
Recommended For Designs =
Switching Loss Curves =
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Some Part number from the same manufacture
Some Part number from the same manufacture Powerex, Inc. |
CM75TU-12F Type = Igbt Module ;; Voltage = 600V ;; Current = 75A ;; Circuit Configuration = Six Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
CM75TU-12H |
CM75TU-24F Type = Igbt Module ;; Voltage = 1200V ;; Current = 75A ;; Circuit Configuration = Six Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
CM75TU-24H |
CM75TU-34KA Type = Igbt Module ;; Voltage = 1700V ;; Current = 75A ;; Circuit Configuration = Six Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800DU-12H Type = Igbt Module ;; Voltage = 600V ;; Current = 800A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800DZ-34H Type = Igbt Module ;; Voltage = 1700V ;; Current = 800A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800HA-24H Type = Igbt Module ;; Voltage = 1200V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800HA-28H Type = Igbt Module ;; Voltage = 1400V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800HA-34H Type = Igbt Module ;; Voltage = 1700V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800HB-50H Type = Igbt Module ;; Voltage = 2500V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CM800HB-66H Type = Igbt Module ;; Voltage = 3300V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CM900DU-24NF Type = Igbt Module ;; Voltage = 1200V ;; Current = 900A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves = |
CM900HB-90H Type = Igbt Module ;; Voltage = 4500V ;; Current = 900A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
CMDU300DU-12NFH Type = Igbt Module ;; Voltage = 600V ;; Current = 300A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves = |
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CM431255 : Style = Phase Control ;; Type = SCR Module ;; Voltage = 1200V ;; Current = 55A ;; Circuit Configuration = Dual SCR M63814FP : Package = 16 Pin Sop ;; Unit = 7 ;; Input_fct Voltage = H ;; Output Current = Sink ;; Io Max (mA) = 300 ;; Vo Max (V) = 35 TA20241603DH : Scr Semiconductor Module; SCR PHASE CTRL 2400V 1600A Specifications: Number of SCRs, Diodes: 1 SCR ; Current - On State (It (AV)) (Max): 1600A ; Current - On State (It (RMS)) (Max): 2500A ; Voltage - Off State: 2400V ; Current - Gate Trigger (Igt) (Max): 200mA ; Current - Hold (Ih) (Max): - ; Current - Non Rep. Surge 50, 60Hz (Itsm): 26900A, 29500A ; T700042504BY : Scr - Single Discrete Semiconductor Product - 400V Standard Recovery; SCR PHASE CTRL MOD 400V 250A Specifications: SCR Type: Standard Recovery ; Voltage - Off State: 400V ; Current - On State (It (RMS)) (Max): - ; Current - On State (It (AV)) (Max): 250A ; Current - Gate Trigger (Igt) (Max): 150mA ; Current - Hold (Ih) (Max): - ; Current - Non Rep. Surge 50, 60Hz (Itsm): - ; Voltage - Gate Trigge C185E : 274.75 A, 500 V, SCR Specifications: Thyristor Type: SCR ; Package Type: T60, 3 PIN ; Pin Count: 3 ; VDRM: 500 volts ; VRRM: 500 volts ; IT(RMS): 275 amps R700123XXWA : 300 A, 1200 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R70, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 300000 mA ; VRRM: 1200 volts T507094074AQ : 63 A, 900 V, SCR, TO-83 Specifications: VDRM: 900 volts ; VRRM: 900 volts ; IT(RMS): 63 amps ; IGT: 150 mA ; Package Type: TO-83, 3 PIN ; Pin Count: 2 T727024844DN : 625 A, 200 V, SCR Specifications: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 625 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: CASE T72, 3 PIN ; Pin Count: 3 T7S7036544DN : 943 A, 200 V, SCR Specifications: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 943 amps ; IGT: 150 mA ; Package Type: CASE T7S, 3 PIN ; Pin Count: 3 T7S70465B4DN : 943 A, 400 V, SCR Specifications: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 943 amps ; IGT: 150 mA ; Package Type: CASE T7S, 3 PIN ; Pin Count: 3 T82F087523DN : 1180 A, 800 V, SCR Specifications: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 1180 amps ; IGT: 200 mA ; Package Type: CASE T82, 3 PIN ; Pin Count: 3 |
Same catergory
Same catergory |
240NQ035 : >100 Amp. 35V 240A Schottky Discrete Diode in a D-67 Half-pak Package. BUZ351 : 11.5a, 400v, 0.400 Ohm, N-channel Power MOSFET. [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) 0.400 (BUZ35 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, /Sub Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring. HVD381B : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. ITF86172SK8T : 10a, 30v, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET. 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET [ /Title - rDS(ON) = 0.016, VGS = -10V Packaging (HUF7 - rDS(ON) = 0.023, VGS -4.5V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.026, VGS -4V 6400S BRANDING DASH Gate to Source Protection Diode K8) Simulation Models /Sub- Temperature Compensated PSPICETM and SABER ject 5 Electrical Models (60V, Spice and SABER. KTA1663 : = General Purpose Transistor ;; Package = SOT-89. °§1W (Mounted on Ceramic Substrate). °§Small Flat Package. °§Complementary to KTC4375. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IB PC PC* Tj Tstg RATING CHARACTERISTIC Collector Cut-off. S2020 : Standard Rectifier (trr More Than 500ns), Package : DO-4. STS4DPFS30L : Low Voltage. P-channel 30V 0.07 Ohm 4A SO-8 StripFET MOSFET Plus Schottky Rectifier. VUO160-08NO7 : 800V Three Phase Rectifier Bridge. * delivery time on request Symbol IdAV IFSM Test Conditions = 100°C, module = 35°C (RthCA = 0.2 K/W), module TVJ = 0 TVJ = TVJM 0 I2t TVJ = 0 TVJ = TVJM = 0 TVJ TVJM Tstg VISOL Md Weight Symbol VT0 rT RthJC RthJH a 50/60 Hz, RMS IISOL = 1 min ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz),. DF2S5.1SC : 5.1 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. GWK10 : RESISTOR, WIRE WOUND, 10 W, 2; 5; 10 %, 180 ppm, 1.8 ohm - 16000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, LEAD FREE ; Operating DC Voltage: 280 volts ; Operating Temperature: -55 to 350 C (-67 to 662 F). IRGCC40UE : 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: DIE-2 ; Number of units in IC: 1. PZT4401TRL : 0.6 A, 40 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN. SHDG3242 : 40 A, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 40000 mA ; trr: 0.0600 ns. 2N4126L34Z : 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP. 2SA1575-C : 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: PCP, 3 PIN. 35PX100020CA10X20 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 35 volts ; Leakage Current: 350 microamps ; Mounting Style: Through Hole ; Operating Temperature:. |
6 buyer reviews from Philippines
Matthew Moore
Length of registration:7 years
The CM75TJ-24F integrated circuit is a high-performance device that is designed to provide reliable operation in a variety of applications. It features a low power consumption, high speed operation, and a wide operating temperature range. The CM75TJ-24F is also designed to provide excellent noise immunity and EMI/RFI protection. With its robust design and reliable performance, the CM75TJ-24F is an
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03/17/2023
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All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
CM75TJ-24F
CM75TJ-24F has several brands around the world that may have alternate names for CM75TJ-24F due to regional differences or acquisition. CM75TJ-24F may also be known as the following names:
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