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Description
800 Amp Intelligent Power Module For Flat-base Type Insulated Package
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Some Part number from the same manufacture
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
PM800HSA120 800 Amp Intelligent Power Module For Flat-base Type Insulated Package |
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CM20MD-12H : Igbt Modules Medium Power Switching Use Insulated Type CM400DY-50H : Modules Hvigbt (high Voltage Insulated Gate Bipolar Transistor) Modules M37481M8 : M37531M4T-XXXFP : Single Chip 8-bit CMOS Microcomputer M38039F5-FP : RAM Size: 2048bytes; Single-chip 8-bit CMOS Microcomputer M38191ED-XXXFS : RAM Size: 256bytes; Single-chip 8-bit CMOS Microcomputer M38222E3HGP : RAM Size: 384 Bytes; Single-chip 8-bit CMOS Microcomputer M38223M9-XXXHP : RAM Size: 512 Bytes; Single-chip 8-bit CMOS Microcomputer M38254EEDHP : RAM Size: 640 Bytes; Single-chip 8-bit CMOS Microcomputer M38860F7A-XXXHP : RAM Size: 192bytes Single Chip 8-bit CMOS Microcomputer MH16S64APFC-5L : |
Same catergory
Same catergory |
2SA1528 : PNP Epitaxial Planar Silicon Transistor, Switching Application. Applications Switching circuits, inverter circuits, interface circuits, dirver circuits. On-chip bias resistance R1=2.2K, R2=10k. Large current capacity : IC=500mA. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage. 2SC5812 : Small Signal Bip-TRSs for High Frequency Amplifier. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. 2SK3431-Z : Switching N-channel Power MOSFET Industrial Use. The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. Super low on-state resistance: 5.6 m MAX. (VGS 8.9 m MAX. (VGS = 42 A) Built-in gate protection diode 5 Low Ciss: Ciss 6100 pF TYP. Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation (TC = 25°C). 50RIA : Medium Power Thyristors. High current rating Excellent dynamic characteristics dv/dt = 1000V/µs option Superior surge capabilities Standard package Metric threads version available Types 1600V V DRM / V RRM Typical Applications Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied. MS3421 : Microwave. RF NPN Transistor. GOLD METALIZATION 600 mW POWER OUTPUT 2.4 GHz OPERATION COMMON BASE CONFIGURATION THE MS3421 IS IDEALLY SUITED FOR LOW VOLTAGE OPERATION IN THE 2-4 GHz FREQUENCY RANGE WITH POWER LEVELS 600 mW TYPICAL AT 3 GHz. Power Dissipation* Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature RTH(J-C) Junction - Case Thermal Resistance. NTE385 : Silicon NPN Transistor. Audio Power Amp, Switch. NTE385 Silicon NPN Transistor Audio Power Amp, Switch : The is a silicon NPN transistor a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications. : D Fast TurnOff Times Absolute Maximum Ratings: CollectorEmitter. STS9NH3LL : Power MOSFETs N-channel 30V - 0.018 Ohm - 9A - SO-8 Low gate charge STripFET III Power MOSFET. FDP027N08B : N-Channel PowerTrench® MOSFET 80V, 223A, 2.7m? N-Channel PowerTrench® MOSFET 80V, 223A, 2.7m?. IRHQ6110PBF : 3 A, 100 V, 0.62 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.6200 ohms ; Package Type: HERMETIC SEALED, LCC-28 ; Number of units in IC: 4. PHMKP480/150-DW : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 480 V, 690.8 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 691 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 480 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 55 C (-13 to 131 F). S711499 : SHIELDED, 0.1 uH - 25 uH, VARIABLE INDUCTOR. s: Devices in Package: 1 ; Lead Style: WIRE ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Configuration: Variable ; Application: RF Choke ; Inductance Range: 21 microH. SBR40U200CT-G : 40 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; RoHS Compliant: RoHS ; Package: GREEN, PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2. SI4886DY-T1 : 9500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0100 ohms ; Package Type: SO-8, SO-8 ; Number of units in IC: 1. SI7820DN-T1 : 1.7 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.2400 ohms ; Package Type: 1212-8, POWERPAK-8 ; Number of units in IC: 1. VPR103T016N3L0A : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 16 volts ; Leakage Current: 320 microamps ; ESR: 12 milliohms ; Mounting Style: Through Hole ; Operating. X262R102B : RES,TAPPED,CARBON COMPOSITION,1K OHMS,350WVDC,20% +/-TOL. s: Potentiometer Type: Standard Potentiometer. 1706BX104J2F1 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.1 uF, SURFACE MOUNT, 1706. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology. 3617A122KT : 1 ELEMENT, 1200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Application: General Purpose, Power Choke ; Inductance Range: 1200 microH ; Rated DC Current: 72 milliamps ; Operating Temperature: -20 to 80 C (-4 to 176 F). 51243R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F). |
6 buyer reviews from Philippines
Kim Benedict Chua
Length of registration:3 years
Got it in very good packaging. Will test and hopefully it will work well. Thank you!
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03/17/2021
Ramon R. Reyes
Length of registration:12 years
works good! fm DU1FV
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0
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03/27/2017
Norman Tayo
Length of registration:10 years
THANK YOU...GOT THE ITEM QUICKLY.
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02/06/2017
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PM800HSA060
PM800HSA060 has several brands around the world that may have alternate names for PM800HSA060 due to regional differences or acquisition. PM800HSA060 may also be known as the following names:
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