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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 200.0 A; VCEsat typ: 2.5 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: 62 mm;
Description: The BSM200GB120DN2 is an EUPEC module manufactured by Infineon Technologies. It is a three-phase inverter module with a rated current of 200A and a maximum voltage of 1200V. Features:
Estoque:2000
Mínimo:1
Favorito
Estoque:2000
Mínimo:1
Favorito
MODULE
Eupec
IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate
The BSM75GB120DN2 is a module made by Eupec. It is a 1250V/75A Fast IGBT module featuring a Trench Field Stop IGBT technology. It has a high frequency switching capability (up to 20kHz). This module i
Estoque:2000
Mínimo:1
Favorito
MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
VUB160-16N01 is an IGBT module manufactured by IXYS. It is a high-voltage, high-current, high-speed IGBT module with a maximum collector-emitter voltage of 1600V and a maximum collector current of 160
Estoque:2000
Mínimo:1
Favorito
Description: This is a Toshiba IGBT module. Features: High speed switching Low on-state resistance High surge current capability Low inductance Low noise High reliability Applicati
Estoque:2000
Mínimo:1
Favorito
MITSUBISHI CM50DY-28H is a IGBT module. It is a high-power semiconductor module with a collector current of 50A and a collector emitter voltage of 28V. It is suitable for applications such as motor co
Estoque:2000
Mínimo:1
Favorito
Description: SKM75GD123D is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in motor control applications. Features: Three-phase bridge rectifier Rated voltag
Estoque:2000
Mínimo:1
Favorito
SKM100GB123D is a three-phase bridge rectifier module manufactured by Semikron. It has a maximum current rating of 100A and a maximum voltage rating of 1200V. It is designed for use in motor drives, w
Estoque:2000
Mínimo:1
Favorito
MODULE
Network Hub; Approval Categories:IEEE 802.3af Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
MG200J1ZS50 is an IGBT module manufactured by Mitsubishi Electric. It is a high-power, high-speed switching device designed for use in motor control, inverter, and other power conversion applications.
Estoque:2000
Mínimo:1
Favorito
SKM145GB123D is a module manufactured by Semikron. It is a three-phase bridge rectifier with a 400V maximum voltage rating. It has a maximum current rating of 145A and a maximum reverse voltage of 120
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba America Electronic Components
TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG200Q1JS9 is a high-power insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. It is designed for use in motor control applications such as AC
Estoque:2000
Mínimo:1
Favorito
MODULE
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, ITrms:12A; Gate Trigger Current QI, Igt:10mA; Current, It av:12A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Estoque:2000
Mínimo:1
Favorito
Description: The SKM200GAL123D is a three-phase bridge rectifier module from Semikron. It is designed for use in motor control, power conversion, and other applications. Features: -High surge current
Estoque:2000
Mínimo:1
Favorito
MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 150.0 A; VCEsat typ: 2.5 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: 62 mm;
Description: The BSM150GAR120D is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a maximum collector current of 150A. Features: Low switchin
Estoque:2000
Mínimo:1
Favorito
Description: The BSM50GB120D is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device that is designed for use in motor control, welding, and other applications. Fe
Estoque:2000
Mínimo:1
Favorito
MODULE
Toshiba America Electronic Components
TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG150J2YS40 is a three-phase brushless motor driver module from Toshiba America Electronic Components. It is designed to drive a three-phase brushless motor with a maximum output curr
Estoque:2000
Mínimo:1
Favorito
Description: The CM50DY-12H is an IGBT module manufactured by Mitsubishi. It is a high-power module with a rated collector-emitter voltage of 1200V, a collector current of 50A, and a gate-emitter volt
Estoque:2000
Mínimo:1
Favorito
MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
Estoque:2000
Mínimo:1
Favorito
SKM100GB124D is a 1200V, 100A IGBT module manufactured by Semikron. It is a three-phase bridge module with a built-in diode and a maximum junction temperature of 175°C. It is suitable for applications
Estoque:2000
Mínimo:1
Favorito
Description: The SKM100GB063D is a three-phase bridge rectifier module from Semikron. It is designed to be used in motor drives, welding machines, UPS, and other power supplies. Features: - Maximum r
Estoque:2000
Mínimo:1
Favorito
Especialistas em produção interrompida, podemos fornecer um grande número de componentes eletrônicos que foram interrompidos e são difíceis de encontrar, para facilitar a empresa de manutenção