IGBT

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похожие товары 8868 шт.

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CM150RX1-12A

MODULE

Mitsubishi

IGBT MODULES HIGH POWER SWITCHING USE

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≥1:

18531.58593 руб.

17419.69077 руб.

≥2:

18531.58593 руб.

17419.69077 руб.

≥5:

17296.14687 руб.

16258.37806 руб.

≥10:

17296.14687 руб.

16258.37806 руб.

≥20:

17296.14687 руб.

16258.37806 руб.

≥30:

17296.14687 руб.

16258.37806 руб.

≥50:

17296.14687 руб.

16258.37806 руб.

≥100:

17172.60296 руб.

16142.24678 руб.

≥500:

17049.05906 руб.

16026.11551 руб.

From: 17049.05906 руб.

MITSUBISHI CM150RX1-12A is a power module with a voltage rating of 1200V and a current rating of 150A. It is designed for use in medium-voltage applications such as motor drives, power supplies, and U

Наличность:2000

Минимальное количество заказа:1

В избранное

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MG25Q6ES51

MODULE

Toshiba America Electronic Components

Vces (volts) = 1200 ;; Ic (amps) = 25 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6

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≥1:

6758.57840 руб.

6353.06369 руб.

≥2:

6758.57840 руб.

6353.06369 руб.

≥5:

6308.00650 руб.

5929.52611 руб.

≥10:

6308.00650 руб.

5929.52611 руб.

≥20:

6308.00650 руб.

5929.52611 руб.

≥30:

6308.00650 руб.

5929.52611 руб.

≥50:

6308.00650 руб.

5929.52611 руб.

≥100:

6262.94932 руб.

5887.17236 руб.

≥500:

6217.89213 руб.

5844.81860 руб.

From: 6217.89213 руб.

Description: The MG25Q6ES51 is a 25A, 600V N-channel MOSFET module with a low on-resistance. It is designed for use in high-efficiency power supplies, motor drives, and other power switching applicati

Наличность:2000

Минимальное количество заказа:1

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BSM100GP60

MODULE

Eupec

IGBT-Modules

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≥1:

7412.63437 руб.

6967.87631 руб.

≥2:

7412.63437 руб.

6967.87631 руб.

≥5:

6918.45875 руб.

6503.35122 руб.

≥10:

6918.45875 руб.

6503.35122 руб.

≥20:

6918.45875 руб.

6503.35122 руб.

≥30:

6918.45875 руб.

6503.35122 руб.

≥50:

6918.45875 руб.

6503.35122 руб.

≥100:

6869.04118 руб.

6456.89871 руб.

≥500:

6819.62362 руб.

6410.44620 руб.

From: 6819.62362 руб.

Description: The BSM100GP60 is a high-performance insulated-gate bipolar transistor (IGBT) module from EUPEC. It is designed for use in high-power applications such as motor drives, welding, and unint

Наличность:2000

Минимальное количество заказа:1

В избранное

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MG25Q1BS11

MODULE

Toshiba

TRANS IGBT MODULE N-CH 1200V 25A 3(2-33D2A)

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≥1:

2616.22390 руб.

2459.25046 руб.

≥2:

2616.22390 руб.

2459.25046 руб.

≥5:

2529.01643 руб.

2377.27545 руб.

≥10:

2494.13345 руб.

2344.48544 руб.

≥20:

2476.69195 руб.

2328.09044 руб.

≥30:

2441.80897 руб.

2295.30043 руб.

≥50:

2441.80897 руб.

2295.30043 руб.

≥100:

2424.36748 руб.

2278.90543 руб.

≥500:

2406.92598 руб.

2262.51043 руб.

From: 2406.92598 руб.

Description: This is a 25A, 600V, three-phase inverter module from Toshiba. Features: High-speed switching Low loss High reliability Low noise High efficiency High surge capability

Наличность:2000

Минимальное количество заказа:1

В избранное

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CM200DU-24F

MODULE

Mitsubis

HIGH POWER SWITCHING USE

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≥1:

7630.65303 руб.

7172.81385 руб.

≥2:

7630.65303 руб.

7172.81385 руб.

≥5:

7121.94283 руб.

6694.62626 руб.

≥10:

7121.94283 руб.

6694.62626 руб.

≥20:

7121.94283 руб.

6694.62626 руб.

≥30:

7121.94283 руб.

6694.62626 руб.

≥50:

7121.94283 руб.

6694.62626 руб.

≥100:

7071.07181 руб.

6646.80750 руб.

≥500:

7020.20079 руб.

6598.98874 руб.

From: 7020.20079 руб.

The CM200DU-24F is a module manufactured by Mitsubishi. It is a power supply module that is used to convert AC power to DC power. It is designed to provide a reliable and cost-effective power supply s

Наличность:2000

Минимальное количество заказа:1

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BSM50GD60DLC

MODULE

Eupec

High Voltage Rectifer Diodes

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≥1:

6414.14947 руб.

6029.30046 руб.

≥2:

6414.14947 руб.

6029.30046 руб.

≥5:

5986.53959 руб.

5627.34717 руб.

≥10:

5986.53959 руб.

5627.34717 руб.

≥20:

5986.53959 руб.

5627.34717 руб.

≥30:

5986.53959 руб.

5627.34717 руб.

≥50:

5986.53959 руб.

5627.34717 руб.

≥100:

5943.77858 руб.

5587.15179 руб.

≥500:

5901.01756 руб.

5546.95657 руб.

From: 5901.01756 руб.

Description: The BSM50GD60DLC is an insulated-gate bipolar transistor module from EUPEC. It is designed for use in motor drives, UPS, and other industrial applications. Features: High power densit

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM100GB128D

MODULE

Semikron

SPT IGBT Module

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≥1:

3382.17635 руб.

3179.24574 руб.

≥2:

3382.17635 руб.

3179.24574 руб.

≥5:

3269.43716 руб.

3073.27094 руб.

≥10:

3224.34145 руб.

3030.88099 руб.

≥20:

3201.79367 руб.

3009.68609 руб.

≥30:

3156.69796 руб.

2967.29614 руб.

≥50:

3156.69796 руб.

2967.29614 руб.

≥100:

3134.15004 руб.

2946.10110 руб.

≥500:

3111.60226 руб.

2924.90605 руб.

From: 3111.60226 руб.

Description: The SKM100GB128D is a high-performance, high-power insulated-gate bipolar transistor (IGBT) module manufactured by Semikron. It is designed to provide high-power switching and fast switch

Наличность:2000

Минимальное количество заказа:1

В избранное

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FF150R12KE3G

MODULE

Eupec

62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode

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≥1:

9180.19288 руб.

8629.38124 руб.

≥2:

9180.19288 руб.

8629.38124 руб.

≥5:

8568.18006 руб.

8054.08930 руб.

≥10:

8568.18006 руб.

8054.08930 руб.

≥20:

8568.18006 руб.

8054.08930 руб.

≥30:

8568.18006 руб.

8054.08930 руб.

≥50:

8568.18006 руб.

8054.08930 руб.

≥100:

8506.97874 руб.

7996.55999 руб.

≥500:

8445.77755 руб.

7939.03083 руб.

From: 8445.77755 руб.

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM195GB126DN

MODULE

Semikron

Trench IGBT Module

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≥1:

5131.31955 руб.

4823.44043 руб.

≥2:

5131.31955 руб.

4823.44043 руб.

≥5:

4960.27562 руб.

4662.65908 руб.

≥10:

4891.85803 руб.

4598.34648 руб.

≥20:

4857.64916 руб.

4566.19019 руб.

≥30:

4789.23156 руб.

4501.87773 руб.

≥50:

4789.23156 руб.

4501.87773 руб.

≥100:

4755.02283 руб.

4469.72144 руб.

≥500:

4720.81396 руб.

4437.56514 руб.

From: 4720.81396 руб.

Description: The SKM195GB126DN is a three-phase bridge rectifier module from Semikron. Features: 1200V blocking voltage Low forward voltage drop High surge current capability Low thermal resista

Наличность:2000

Минимальное количество заказа:1

В избранное

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Fp20r06kl4

MODULE

Eupec

04+

IGBT-Module

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≥1:

2398.20524 руб.

2254.31292 руб.

≥2:

2398.20524 руб.

2254.31292 руб.

≥5:

2318.26506 руб.

2179.16916 руб.

≥10:

2286.28899 руб.

2149.11165 руб.

≥20:

2270.30096 руб.

2134.08290 руб.

≥30:

2238.32489 руб.

2104.02540 руб.

≥50:

2238.32489 руб.

2104.02540 руб.

≥100:

2222.33685 руб.

2088.99664 руб.

≥500:

2206.34882 руб.

2073.96789 руб.

From: 2206.34882 руб.

Description: The FP20R06KL4 is an insulated gate bipolar transistor (IGBT) module from Eupec. It is a three-phase, full-bridge module with an integrated freewheeling diode. Features: Rated voltage:

Наличность:2000

Минимальное количество заказа:1

В избранное

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FZ400R12KS4

MODULE

Infineon/eupec

IGBT-Module / IGBT-inverter

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≥1:

10464.89558 руб.

9837.00185 руб.

≥2:

10464.89558 руб.

9837.00185 руб.

≥5:

9767.23588 руб.

9181.20173 руб.

≥10:

9767.23588 руб.

9181.20173 руб.

≥20:

9767.23588 руб.

9181.20173 руб.

≥30:

9767.23588 руб.

9181.20173 руб.

≥50:

9767.23588 руб.

9181.20173 руб.

≥100:

9697.46991 руб.

9115.62171 руб.

≥500:

9627.70394 руб.

9050.04170 руб.

From: 9627.70394 руб.

The FZ400R12KS4 is a module manufactured by Infineon/Eupec. It is an insulated gate bipolar transistor (IGBT) module designed for use in medium-voltage applications. It features a maximum collector-em

Наличность:2000

Минимальное количество заказа:1

В избранное

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BSM50GD120DN2-B10

MODULE

Eupec

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

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≥1:

8050.92803 руб.

7567.87238 руб.

≥2:

8050.92803 руб.

7567.87238 руб.

≥5:

7514.19953 руб.

7063.34755 руб.

≥10:

7514.19953 руб.

7063.34755 руб.

≥20:

7514.19953 руб.

7063.34755 руб.

≥30:

7514.19953 руб.

7063.34755 руб.

≥50:

7514.19953 руб.

7063.34755 руб.

≥100:

7460.52668 руб.

7012.89513 руб.

≥500:

7406.85383 руб.

6962.44256 руб.

From: 7406.85383 руб.

Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking

Наличность:2000

Минимальное количество заказа:1

В избранное

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BSM150GB60DLC

MODULE

Eupec

00+

IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 150.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;

Utsource

≥1:

2616.22390 руб.

2459.25046 руб.

≥2:

2616.22390 руб.

2459.25046 руб.

≥5:

2529.01643 руб.

2377.27545 руб.

≥10:

2494.13345 руб.

2344.48544 руб.

≥20:

2476.69195 руб.

2328.09044 руб.

≥30:

2441.80897 руб.

2295.30043 руб.

≥50:

2441.80897 руб.

2295.30043 руб.

≥100:

2424.36748 руб.

2278.90543 руб.

≥500:

2406.92598 руб.

2262.51043 руб.

From: 2406.92598 руб.

BSM150GB60DLC is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a maximum current rating of 150A and a maximum voltage rating of 600V. It is designed for

Наличность:2000

Минимальное количество заказа:1

В избранное

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FP75R12KT3

MODULE

Eupec

10+

IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM 3;

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≥1:

6764.35269 руб.

6358.49149 руб.

≥2:

6764.35269 руб.

6358.49149 руб.

≥5:

6538.87431 руб.

6146.54189 руб.

≥10:

6448.68290 руб.

6061.76199 руб.

≥20:

6403.58719 руб.

6019.37189 руб.

≥30:

6313.39578 руб.

5934.59200 руб.

≥50:

6313.39578 руб.

5934.59200 руб.

≥100:

6268.30022 руб.

5892.20219 руб.

≥500:

6223.20451 руб.

5849.81224 руб.

From: 6223.20451 руб.

Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi

Наличность:2000

Минимальное количество заказа:1

В избранное

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BSM20GP60

MODULE

Eupec

IGBT-Modules

Utsource

≥1:

3270.27987 руб.

3074.06308 руб.

≥2:

3270.27987 руб.

3074.06308 руб.

≥5:

3161.27054 руб.

2971.59431 руб.

≥10:

3117.66681 руб.

2930.60680 руб.

≥20:

3095.86494 руб.

2910.11305 руб.

≥30:

3052.26121 руб.

2869.12554 руб.

≥50:

3052.26121 руб.

2869.12554 руб.

≥100:

3030.45935 руб.

2848.63179 руб.

≥500:

3008.65748 руб.

2828.13803 руб.

From: 3008.65748 руб.

Description: The BSM20GP60 is a high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 20A collector current Low on-state volta

Наличность:2000

Минимальное количество заказа:1

В избранное

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CM100DY-12H

MODULE

Mitsubis

HIGH POWER SWITCHING USE INSULATED TYPE

Utsource

≥1:

3174.61386 руб.

2984.13707 руб.

≥2:

3174.61386 руб.

2984.13707 руб.

≥5:

3068.79342 руб.

2884.66576 руб.

≥10:

3026.46524 руб.

2844.87736 руб.

≥20:

3005.30116 руб.

2824.98316 руб.

≥30:

2962.97298 руб.

2785.19461 руб.

≥50:

2962.97298 руб.

2785.19461 руб.

≥100:

2941.80889 руб.

2765.30040 руб.

≥500:

2920.64480 руб.

2745.40606 руб.

From: 2920.64480 руб.

The Mitsubishi CM100DY-12H is a 100A, IGBT module. It is designed for use in motor drives and other applications requiring high power control and fast switching times. It has a low on-state voltage dr

Наличность:2000

Минимальное количество заказа:1

В избранное

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FSAM30SH60A

MODULE

Fairchil

15+

16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor

Utsource

≥1:

1693.24176 руб.

1591.64725 руб.

≥5:

1599.17282 руб.

1503.22251 руб.

≥10:

1552.13892 руб.

1459.01066 руб.

≥20:

1505.10387 руб.

1414.79763 руб.

≥50:

1458.06881 руб.

1370.58461 руб.

≥100:

1439.25613 руб.

1352.90083 руб.

≥200:

1411.03492 руб.

1326.37275 руб.

≥500:

1392.22108 руб.

1308.68781 руб.

≥1000:

1364.00089 руб.

1282.16090 руб.

From: 1364.00089 руб.

Fairchild FSAM30SH60A is a 600V Fast Switching Diode Module that features high surge capability and low power losses. It is designed for use in switching applications such as motor control, welding an

Наличность:2000

Минимальное количество заказа:1

В избранное

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FS25R12W1T4

MODULE

Eupec

EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Utsource

≥1:

3865.34436 руб.

3633.42367 руб.

≥2:

3865.34436 руб.

3633.42367 руб.

≥5:

3736.49954 руб.

3512.30950 руб.

≥10:

3684.96168 руб.

3463.86401 руб.

≥20:

3659.19274 руб.

3439.64112 руб.

≥30:

3607.65473 руб.

3391.19549 руб.

≥50:

3607.65473 руб.

3391.19549 руб.

≥100:

3581.88580 руб.

3366.97260 руб.

≥500:

3556.11687 руб.

3342.74985 руб.

From: 3556.11687 руб.

FS25R12W1T4 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a maximum collector-emitter voltage of 1200V and a maximum collector c

Наличность:2000

Минимальное количество заказа:1

В избранное

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CM50MXB2-24A

MODULE

MIT

04+

IGBT MODULES HIGH POWER SWITCHING USE

Utsource

≥1:

10284.17570 руб.

9667.12520 руб.

≥2:

10284.17570 руб.

9667.12520 руб.

≥5:

9598.56400 руб.

9022.65013 руб.

≥10:

9598.56400 руб.

9022.65013 руб.

≥20:

9598.56400 руб.

9022.65013 руб.

≥30:

9598.56400 руб.

9022.65013 руб.

≥50:

9598.56400 руб.

9022.65013 руб.

≥100:

9530.00280 руб.

8958.20265 руб.

≥500:

9461.44175 руб.

8893.75517 руб.

From: 9461.44175 руб.

Description: The CM50MXB2-24A is a module from MIT that is designed for use in a wide range of applications. It is a 50A, 24V DC module with a maximum current of 50A and a maximum voltage of 24V DC.

Наличность:2000

Минимальное количество заказа:1

В избранное

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