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INFINEON TECHNOLOGIES BTS432E2E3062ABUMA1

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Used and refurbished parts guaranteed can work well

INFINEON TECHNOLOGIES BTS432E2E3062ABUMA1

TO-263-5

Infineon Technologies

Utsource

≥1:

342.08799 руб.

307.87912 руб.

≥5:

228.05871 руб.

205.25279 руб.

≥10:

205.25279 руб.

184.72750 руб.

≥20:

199.55131 руб.

179.59621 руб.

≥50:

193.84984 руб.

174.46478 руб.

≥100:

188.14836 руб.

169.33349 руб.

≥200:

182.44688 руб.

164.20221 руб.

≥500:

180.16640 руб.

162.14978 руб.

≥1000:

176.74540 руб.

159.07092 руб.

From: 176.74540 руб.

Description: The BTS432E2E3062ABUMA1 is a N-channel enhancement mode Field-Effect Transistor (FET) with a low on-state resistance. Features: * Low on-state resistance * Low gate charge * Low input/ou

Наличность:10000

Минимальное количество заказа:2

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INFINEON TECHNOLOGIES IRFP3710PBF

TO-247(AC)

Infineon Technologies

Utsource

≥1:

478.92318 руб.

450.18774 руб.

≥5:

454.97703 руб.

427.67848 руб.

≥10:

431.03088 руб.

405.16907 руб.

≥20:

419.05773 руб.

393.91422 руб.

≥50:

407.08473 руб.

382.65966 руб.

≥100:

395.11158 руб.

371.40481 руб.

≥200:

383.13858 руб.

360.15025 руб.

≥500:

378.34943 руб.

355.64846 руб.

≥1000:

371.16543 руб.

348.89555 руб.

From: 371.16543 руб.

Description: The Infineon Technologies IRFP3710PBF is a N-channel MOSFET designed for high-current switching applications. It is a high-performance power MOSFET with a maximum drain-source voltage of

Наличность:10000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES SPD02N80C3

TO-252-2(DPAK)

Infineon Technologies

Utsource

≥1:

348.92971 руб.

327.99396 руб.

≥5:

232.61980 руб.

218.66269 руб.

≥10:

209.35823 руб.

196.79672 руб.

≥20:

203.54236 руб.

191.32983 руб.

≥50:

197.72650 руб.

185.86294 руб.

≥100:

191.91151 руб.

180.39678 руб.

≥200:

186.09564 руб.

174.92989 руб.

≥500:

183.76923 руб.

172.74301 руб.

≥1000:

180.28079 руб.

169.46401 руб.

From: 180.28079 руб.

Наличность:10000

Минимальное количество заказа:2

В избранное

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INFINEON TECHNOLOGIES IPD068N10N3G

TO-252-2(DPAK)

Infineon Technologies

Utsource

≥1:

562.16460 руб.

528.43479 руб.

≥5:

534.05676 руб.

502.01340 руб.

≥10:

505.94791 руб.

475.59099 руб.

≥20:

491.89399 руб.

462.38037 руб.

≥50:

477.84007 руб.

449.16960 руб.

≥100:

463.78615 руб.

435.95897 руб.

≥200:

449.73121 руб.

422.74733 руб.

≥500:

444.10982 руб.

417.46329 руб.

≥1000:

435.67729 руб.

409.53671 руб.

From: 435.67729 руб.

Наличность:10000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES SPA08N80C3

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

466.95004 руб.

438.93304 руб.

≥5:

443.60213 руб.

416.98597 руб.

≥10:

420.25524 руб.

395.03992 руб.

≥20:

408.58077 руб.

384.06588 руб.

≥50:

396.90733 руб.

373.09286 руб.

≥100:

385.23388 руб.

362.11983 руб.

≥200:

373.56044 руб.

351.14681 руб.

≥500:

368.89004 руб.

346.75664 руб.

≥1000:

361.88597 руб.

340.17277 руб.

From: 361.88597 руб.

Наличность:10000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES SPW20N60C3

TO-247(AC)

Infineon Technologies

Utsource

≥1:

1157.42879 руб.

1087.98301 руб.

≥5:

1099.55792 руб.

1033.58445 руб.

≥10:

1041.68603 руб.

979.18487 руб.

≥20:

1012.75103 руб.

951.98603 руб.

≥50:

983.81501 руб.

924.78617 руб.

≥100:

954.87914 руб.

897.58645 руб.

≥200:

925.94312 руб.

870.38659 руб.

≥500:

914.36952 руб.

859.50731 руб.

≥1000:

897.00812 руб.

843.18760 руб.

From: 897.00812 руб.

Description: The SPW20N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage, high speed, low gate charge and low on-resistance MOSFET. It is suitable for use in a variety of ap

Наличность:5000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES SPP20N60C3

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

561.02422 руб.

527.36272 руб.

≥5:

532.97263 руб.

500.99423 руб.

≥10:

504.92206 руб.

474.62676 руб.

≥20:

490.89619 руб.

461.44245 руб.

≥50:

476.87047 руб.

448.25828 руб.

≥100:

462.84460 руб.

435.07396 руб.

≥200:

448.81990 руб.

421.89067 руб.

≥500:

443.20882 руб.

416.61636 руб.

≥1000:

434.79403 руб.

408.70635 руб.

From: 434.79403 руб.

Description: SPP20N60C3 is a N-channel MOSFET produced by Infineon Technologies. It is a high voltage, high speed, low on-resistance MOSFET with a maximum drain-source voltage of 600V and a maximum dr

Наличность:10000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES IRLU3110ZPBF

TO-251(I-PAK)

Infineon Technologies

Utsource

≥1:

824.29890 руб.

774.84093 руб.

≥5:

783.08392 руб.

736.09887 руб.

≥10:

741.86895 руб.

697.35681 руб.

≥20:

721.26153 руб.

677.98585 руб.

≥50:

700.65397 руб.

658.61474 руб.

≥100:

680.04656 руб.

639.24379 руб.

≥200:

659.43915 руб.

619.87283 руб.

≥500:

651.19586 руб.

612.12415 руб.

≥1000:

638.83159 руб.

600.50173 руб.

From: 638.83159 руб.

Description: The IRLU3110ZPBF is a N-Channel Power MOSFET from Infineon Technologies. It is designed to be used in a wide range of applications such as DC-DC converters, motor drives, and power manag

Наличность:5000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES SPA04N60C3

TO-220F(TO-220IS)

Infineon Technologies

Utsource

≥1:

383.13858 руб.

360.15025 руб.

≥5:

363.98142 руб.

342.14249 руб.

≥10:

344.82427 руб.

324.13488 руб.

≥20:

335.24627 руб.

315.13144 руб.

≥50:

325.66813 руб.

306.12799 руб.

≥100:

316.08912 руб.

297.12382 руб.

≥200:

306.51098 руб.

288.12038 руб.

≥500:

302.67923 руб.

284.51842 руб.

≥1000:

296.93196 руб.

279.11606 руб.

From: 296.93196 руб.

Description: The SPA04N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage and high current device with a maximum drain-source voltage of 600V and a maximum drain current of 4A

Наличность:10000

Минимальное количество заказа:1

В избранное

Цитата

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INFINEON TECHNOLOGIES IRFB4019PBF

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

420.19812 руб.

394.98629 руб.

≥5:

399.18795 руб.

375.23671 руб.

≥10:

378.17778 руб.

355.48713 руб.

≥20:

367.67379 руб.

345.61335 руб.

≥50:

357.16878 руб.

335.73870 руб.

≥100:

346.66376 руб.

325.86391 руб.

≥200:

336.15861 руб.

315.98912 руб.

≥500:

331.95637 руб.

312.03906 руб.

≥1000:

325.65360 руб.

306.11433 руб.

From: 325.65360 руб.

Description: The Infineon Technologies IRFB4019PBF is a N-channel power MOSFET designed for use in high-power switching applications. It is a high-performance device with low on-state resistance, fast

Наличность:10000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES IRF7406TRPBF

SOIC-8_150MIL

Infineon Technologies

Utsource

≥1:

211.23930 руб.

198.56500 руб.

≥5:

140.82625 руб.

132.37671 руб.

≥10:

126.74311 руб.

119.13848 руб.

≥20:

123.22240 руб.

115.82910 руб.

≥50:

119.70271 руб.

112.52059 руб.

≥100:

116.18200 руб.

109.21107 руб.

≥200:

112.66114 руб.

105.90140 руб.

≥500:

111.25245 руб.

104.57730 руб.

≥1000:

109.14043 руб.

102.59202 руб.

From: 109.14043 руб.

Наличность:10000

Минимальное количество заказа:2

В избранное

Цитата

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INFINEON TECHNOLOGIES IPD60R600P6ATMA1

TO-252-2(DPAK)

Infineon Technologies

Utsource

≥1:

563.87503 руб.

530.04246 руб.

≥5:

535.68085 руб.

503.53996 руб.

≥10:

507.48770 руб.

477.03849 руб.

≥20:

493.39119 руб.

463.78775 руб.

≥50:

479.29353 руб.

450.53585 руб.

≥100:

465.19702 руб.

437.28525 руб.

≥200:

451.10037 руб.

424.03437 руб.

≥500:

445.46139 руб.

418.73376 руб.

≥1000:

437.00285 руб.

410.78262 руб.

From: 437.00285 руб.

Наличность:10000

Минимальное количество заказа:1

В избранное

Цитата

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INFINEON TECHNOLOGIES SPA04N80C3

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

497.73805 руб.

467.87371 руб.

≥5:

472.85137 руб.

444.48031 руб.

≥10:

447.96468 руб.

421.08676 руб.

≥20:

435.52134 руб.

409.39006 руб.

≥50:

423.07683 руб.

397.69219 руб.

≥100:

410.63349 руб.

385.99549 руб.

≥200:

398.19015 руб.

374.29879 руб.

≥500:

393.21278 руб.

369.61997 руб.

≥1000:

385.74681 руб.

362.60195 руб.

From: 385.74681 руб.

Наличность:10000

Минимальное количество заказа:1

В избранное

Цитата

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INFINEON TECHNOLOGIES IKW40T120

TO-247

Infineon Technologies

Utsource

≥1:

3026.73980 руб.

2845.13535 руб.

≥2:

3026.73980 руб.

2845.13535 руб.

≥5:

2925.84891 руб.

2750.29796 руб.

≥10:

2885.49235 руб.

2712.36286 руб.

≥20:

2865.31341 руб.

2693.39465 руб.

≥30:

2824.95787 руб.

2655.46042 руб.

≥50:

2824.95787 руб.

2655.46042 руб.

≥100:

2804.77908 руб.

2636.49236 руб.

≥500:

2784.60130 руб.

2617.52518 руб.

From: 2784.60130 руб.

Description: The IKW40T120 is a 1200V, 40A, three-phase insulated gate bipolar transistor (IGBT) module from Infineon Technologies. It is designed for use in motor control, UPS, welding and other indu

Наличность:2000

Минимальное количество заказа:1

В избранное

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INFINEON TECHNOLOGIES IRF640NPBF

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

114.02928 руб.

107.18757 руб.

≥5:

85.52203 руб.

80.39075 руб.

≥10:

51.31316 руб.

48.23430 руб.

≥20:

49.88790 руб.

46.89465 руб.

≥50:

48.46250 руб.

45.55471 руб.

≥100:

47.03709 руб.

44.21491 руб.

≥200:

45.61168 руб.

42.87497 руб.

≥500:

45.04164 руб.

42.33908 руб.

≥1000:

44.18642 руб.

41.53517 руб.

From: 44.18642 руб.

Description: The IRF640NPBF is a N-channel enhancement mode power MOSFET produced by Infineon Technologies. It is housed in a TO-220-3 package and is designed for use in power switching applications.

Наличность:10000

Минимальное количество заказа:2

В избранное

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INFINEON TECHNOLOGIES IRF3205ZPBF

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

179.59621 руб.

168.82042 руб.

≥5:

119.73076 руб.

112.54690 руб.

≥10:

107.75776 руб.

101.29234 руб.

≥20:

104.76451 руб.

98.47859 руб.

≥50:

101.77111 руб.

95.66484 руб.

≥100:

98.77786 руб.

92.85124 руб.

≥200:

95.78461 руб.

90.03749 руб.

≥500:

94.58710 руб.

88.91193 руб.

≥1000:

92.79136 руб.

87.22389 руб.

From: 92.79136 руб.

Description: The IRF3205ZPBF is a N-channel MOSFET from Infineon Technologies. It is designed for use in high-current switching applications. It has a maximum drain-source voltage of 100V, a maximum d

Наличность:10000

Минимальное количество заказа:2

В избранное

Цитата

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INFINEON TECHNOLOGIES SPP17N80C3

TO-220(TO-220-3)

Infineon Technologies

Utsource

≥1:

684.17598 руб.

643.12539 руб.

≥5:

649.96711 руб.

610.96909 руб.

≥10:

615.75838 руб.

578.81294 руб.

≥20:

598.65394 руб.

562.73464 руб.

≥50:

581.54951 руб.

546.65649 руб.

≥100:

564.44522 руб.

530.57849 руб.

≥200:

547.34078 руб.

514.50034 руб.

≥500:

540.49907 руб.

508.06908 руб.

≥1000:

530.23635 руб.

498.42219 руб.

From: 530.23635 руб.

Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance

Наличность:10000

Минимальное количество заказа:1

В избранное

Цитата

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INFINEON TECHNOLOGIES IR2010STRPBF

SOP-1-6

Infineon Technologies

Utsource

≥1:

179.15916 руб.

161.24326 руб.

≥5:

119.43949 руб.

107.49555 руб.

≥10:

107.49555 руб.

96.74592 руб.

≥20:

104.50957 руб.

94.05863 руб.

≥50:

101.52359 руб.

91.37118 руб.

≥100:

98.53760 руб.

88.68389 руб.

≥200:

95.55162 руб.

85.99644 руб.

≥500:

94.35717 руб.

84.92146 руб.

≥1000:

92.56564 руб.

83.30900 руб.

From: 92.56564 руб.

Description: The IR2010STRPBF is an integrated circuit from Infineon Technologies. It is a high-voltage, high-speed, low-side switch designed for automotive applications. Features: * High voltage ope