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Country CodeTOSHIBA
Your search GT30J122 and relate product result :21 items
TO-3PF
Toshiba America Electronic Components
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor
Description: GT30J122 is a NPN Silicon Transistor with a TO-3PF package. Features: -High voltage: VCEO=300V -High speed switching: tF=0.2μs -High current capacity: IC=2A Applications: -High
Stock:10000
Minimum:2
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Stock:1995
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Stock:8173
Minimum:10
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Stock:10000
Minimum:2
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TO-3PF
2014+ROHS
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor
Description: The GT30J122 is a N-channel Enhancement Mode Field Effect Transistor (FET) with a TO-3PF package. Features: - Low on-resistance - Low gate charge - Low input capacitance - Low threshold
Stock:10000
Minimum:2
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Stock:100000
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Stock:3000
Minimum:5
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Stock:339
Minimum:1
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Stock:25800
Minimum:5
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Description: GT30J122A is a three-terminal, high-current, high-voltage, NPN silicon power transistor in a TO-3P package. Features: High collector current: IC = 30A High collector-emitter voltage: V
Stock:4990
Minimum:10
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Stock:12970
Minimum:5
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Stock:9999
Minimum:10
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Stock:12996
Minimum:10
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Stock:10000
Minimum:2
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Description: GT30J122A is a high-speed switching transistor with a maximum collector-emitter voltage of 30V and a maximum collector current of 12A. Features: High-speed switching Low collector
Stock:10000
Minimum:2
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TO-3P
2014+ROHS
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor
Description: GT30J122A is a three-terminal, high-current, high-voltage, NPN silicon power transistor in a TO-3P package. Features: High collector current: IC = 30A High collector-emitter voltage: V
Stock:10000
Minimum:2
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TO-247
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor
Stock:10000
Minimum:1
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Stock:2000
Minimum:5
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Stock:12
Minimum:2
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Stock:198571
Minimum:5
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