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Country CodeIXYS
Your search IXGH17N100A and relate product result :7 items
Description: IXGH17N100A is a 1700V, 100A, TO-3P Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. Features: Low on-state voltage drop High speed switching Low gate drive power Low
Stock:10000
Minimum:2
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Stock:16
Minimum:1
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Description: IXGH17N100AU1 is a high voltage, high speed IGBT module from IXYS. It has a maximum collector emitter voltage of 1700V, a maximum collector current of 17A, and a maximum gate emitter volt
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company