K25T120
TO247
Infineon Technologies AG
13-21+
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Your search K25T120 and relate product result :15 items
Stock:505
Minimum:10
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Description: The K25T120 is an N-channel power MOSFET from Infineon. It is designed for use in high-power switching applications. Features: Low on-resistance Low gate charge Low input capacitance
Stock:20680
Minimum:1
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Description: The K25T120 is a 1200V, 25A NPT IGBT from Infineon. Features: Low conduction and switching losses Low gate charge Low gate voltage High speed switching High surge current capability
Stock:10000
Minimum:2
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Stock:45
Minimum:1
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Stock:10000
Minimum:1
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Description: The K25T1202 is an N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed, low-on-resistance device that is suitable for use in a variety of applications, including
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:5000
Minimum:1
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Stock:20
Minimum:1
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Stock:6500
Minimum:10
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Stock:5610
Minimum:10
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Description: The K25T1202 is a three-phase, insulated gate bipolar transistor (IGBT) module from Infineon Technologies. Features: Low switching losses Low EMI Low gate charge High current capabil
Stock:20679
Minimum:1
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Stock:2000
Minimum:5
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Stock:1990
Minimum:5
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