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Country CodeINFINEON
Your search SPB20N60C3 and relate product result :5 items
TO-263
Infineon Technologies AG
1149+
N-Channel MOSFETs >500V…900V; Package: PG-TO263-3; VDS max: 600.0 V; Package: D2PAK TO-263; RDSON @ TJ=25°C VGS=10: 190.0 mOhm; IDmax @ TC=25°C: 20.7 A; IDpuls max: 62.1 A;
Description: N-Channel MOSFET, 20A, 600V Features: - Low gate charge - Low on-resistance - Avalanche rated - High current capability - Ease of paralleling - Fast switching - Improved dv/dt capability
Stock:10000
Minimum:2
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TO-263
Infineon Technologies AG
07+
N-Channel MOSFETs >500V…900V; Package: PG-TO263-3; VDS max: 600.0 V; Package: D2PAK TO-263; RDSON @ TJ=25°C VGS=10: 190.0 mOhm; IDmax @ TC=25°C: 20.7 A; IDpuls max: 62.1 A;
Description: N-Channel MOSFET Transistor Features: - Low on-resistance - Low gate charge - High current capability - Fast switching - Avalanche rated Applications: - DC-DC converters - Motor control
Stock:10000
Minimum:2
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Stock:20349
Minimum:2
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Stock:2000
Minimum:5
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D2PAK
Infineon Technologies AG
Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) D2PAK T/R
Description: N-channel MOSFET Features: Low on-state resistance High current capability Low gate charge Avalanche rated Improved dv/dt capability Application: Switching applications
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