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Country CodeNEXPERIA
NEC
INTERNATIONAL RECTIFIER
TOSHIBA
TEXAS INSTRUMENTS
PHILIPS
NXP
MITSUBISHI
Your search transistor and relate product result :32 items
Stock:10000
Minimum:18
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SOT-23
Nexperia
17+
Stock:30000
Minimum:26
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SOT-23
CJ
17+
Description: NPN Transistor Package: SOT-23 Silk Screen: 1B Features: Low current (max. 100 mA) Low voltage (max. 65 V). Complementary types BC856B/BC857B/BC858B Pb-free lead plating Halogen-fre
Stock:30000
Minimum:53
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Stock:2000
Minimum:1
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Description: Small Signal Diode Package: SOT-23 Manufacturer: NXP Semiconductors Features: Low forward voltage drop Low leakage current High switching speed Low noise High reliability Appli
Stock:10000
Minimum:18
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SOT-23
Nexperia
17+
The NXP BAT54S is a small signal surface-mount Schottky diode in a SOT23 package. It is designed for use in low voltage, low current applications. The device has a low forward voltage drop and a low r
Stock:30000
Minimum:26
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SOT-23
Nexperia
17+
Description: NPN Transistor Package: SOT-23 Silk Screen: 3BW Manufacturer: NXP Semiconductors Features: Low current (max. 100 mA) Low voltage (max. 45 V). Complementary types are BC846B/BC847B/BC8
Stock:30000
Minimum:26
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MOSFET IRF640NPBF (TO-220,IR) is a N-Channel Power MOSFET produced by International Rectifier, a subsidiary of Infineon Technologies. It is a three-terminal device with source, gate, and drain termina
Stock:10000
Minimum:2
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SOT-363
Nexperia
17+
Description: The BC847BPN is a PNP general-purpose transistor in a small SOT-363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for use in switching and amplifier applications.
Stock:10000
Minimum:4
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Description: The TIP41C is an NPN Audio Power Amplifier Transistor with a maximum collector-emitter voltage of 100V and a maximum collector current of 6A. It is designed for use in audio power ampl
Stock:10000
Minimum:13
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SOP18
Texas Instruments
new cycle
The ULN2803ADWR is a high-voltage, high-current Darlington transistor array. It consists of eight NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching
Stock:10000
Minimum:5
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TO-3
RCA
0126
Description: The 2N6254 is a high power NPN silicon transistor manufactured by RCA. It is designed for use in power switching applications such as power amplifiers, motor control, and power supplies.
Stock:10000
Minimum:1
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SOT-23
CJ
17+
Stock:30000
Minimum:41
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SOT-23
NXP Semiconductors
16+
Stock:30000
Minimum:29
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TRANSISTOR678 is a NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is designed for general purpose switching and amplification applications. It has an operating voltage ra
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N/A
TRANSISTOR | BJT | NPN | 300V VBRCEO | 200MA IC | TO-202VAR
Description: The 2SC2652 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: High power gain Low collector-emitter
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company