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Product video Product Picture
BSM75GB120DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate
  • BSM75GB120DN2
  • BSM75GB120DN2
  • BSM75GB120DN2
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BSM75GB120DN2

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Description

IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate

  • ECAD Module
  • Manufacturer Part Number: BSM75GB120DN2
  • Brand: Eupec
  • Package / Case: MODULE
  • Category: Discrete Semiconductor
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • The BSM75GB120DN2 is a module made by Eupec. It is a 1250V/75A Fast IGBT module featuring a Trench Field Stop IGBT technology. It has a high frequency switching capability (up to 20kHz). This module is designed for applications in industrial motor drives and renewable energy sources such as wind turbines and solar inverters. This module provides low losses, which increases the efficiency of the motor drive. Other features include short-circuit ruggedness, temperature compensated current limitation, and over temperature protection. This module also has a low inductive design with low stray inductance, fast and low EMI, and integration of fast recovery diodes. (For reference only)

Introduction:

This is a 75 A, 1200 V dual IGBT manufactured by Infineon. IGBT is a switching device that can be used for fast switching with high efficiency in different types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). It merges the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome gotten from this combination delivers the output switching and conduction features of a bipolar transistor, but its voltage is controlled like a MOSFET.

 

Features:

● Half-bridge

● It Includes fast free-wheeling diodes

● Packaged with insulated metal base plate

 

Parameters:

● Type: Dual

● Vces: 1,200 Volts DC

● Ic: 75 Amps

● Vges +/-: 20

● Ices Max: 1.5 MilliAmps

● Iges Max: 0.32 MicroAmps

● Vge(th) Min/Max: 6.5 Volts

● Vce(sat) Max: 3 Volts

● Height (mm): 30.5

● Width (mm): 94

● Depth (mm): 34

● H x W x D: 1.2 in x 3.7 in x 1.34 in

● Net Weight: 8.8175 OZ

● Gross Weight: 5.6 OZ

 

Applications:

They are mainly used in

● General purpose inverters

● Servo controls

● High Powered Switching



Some Part number from the same manufacture

Some Part number from the same manufacture Eupec GmbH & Co KG
BSM75GB170DN2
BSM75GB60DLC
BSM75GD120DN2
BSM75GD170DL
BSM75GD60DLC
BSM75GP60
BYM300A170DN2
BYM600A170DN2
D1029N
D1030N
D1031SH
D1049N
D1069N
D1131SH
D1169S
D1170S
D121K
D121N
D1251S
D126A/B45
D1331SH

A198S : SCR/ Diode Presspacks

D1131SH : SCR / Diode Presspacks

D251N-1800 :

FD400R33KF2 :

T348N : SCR/ Diode Presspacks

BSM25GD120DLCE3224 : Igbt-module

C67076-A2102-A2 : IGBT Power Module

FZ1200R17KF6CB2 : Igbt-wechselrichter / Igbt-inverter

Same catergory

Same catergory

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TIC206 : Silicon Triacs. Series Silicon Triacs. Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer 700 V Off-State Voltage Max IGT 5 mA (Quadrants - 3) absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC206D Repetitive peak off-state voltage (see Note 1) Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Peak on-state surge.

ZTX751STOA : Transistor. ISSUE 2 JULY 94 * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25°C derate above 25°C Operating and Storage Temperature Range ZTX750 MIN. TYP. SYMBOL VCBO VCEO VEBO.

STW43NM60ND : Power MOSFETs N-channel 600 V - 0.075 #937; - 35 A - TO-247 FDmesh™ Power MOSFET (with fast diode).

PHP32N06LT : N-channel TrenchMOS Logic Level FET Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only..

DD200R : 20 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: HERMETIC SEALED, METAL PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 20000 mA.

EF2520 : POWER TRANSFORMER. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

MCH3382-TL-H : SMALL SIGNAL, FET.

NDB603ALL86Z : 25 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0220 ohms ; Number of units in IC: 1.

SUR83020PTG : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; RoHS Compliant: RoHS.

WCA : RESISTOR, NETWORK, FILM, ISOLATED; JUMPER, 0.65 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, LEAD FREE ; Operating DC Voltage: 50 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).

5MP : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 100; 200; 400 V, CHASSIS MOUNT; THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67 to 221 F).

Product Reviews

    Submit

    11 buyer reviews from Singapore

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    Sarah Jackson

    BSM75GB120DN2
    us United States

    Length of registration:7 years

    This integrated circuit is great! It is easy to install and use, and it works perfectly. I have had no issues with it at all. It is very reliable and I would highly recommend it to anyone looking for a quality integrated circuit.

    0

    0

    Reply0

    03/17/2023

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