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Description
IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate
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Introduction:
This is a 75 A, 1200 V dual IGBT manufactured by Infineon. IGBT is a switching device that can be used for fast switching with high efficiency in different types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). It merges the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome gotten from this combination delivers the output switching and conduction features of a bipolar transistor, but its voltage is controlled like a MOSFET.
Features:
● Half-bridge
● It Includes fast free-wheeling diodes
● Packaged with insulated metal base plate
Parameters:
● Type: Dual
● Vces: 1,200 Volts DC
● Ic: 75 Amps
● Vges +/-: 20
● Ices Max: 1.5 MilliAmps
● Iges Max: 0.32 MicroAmps
● Vge(th) Min/Max: 6.5 Volts
● Vce(sat) Max: 3 Volts
● Height (mm): 30.5
● Width (mm): 94
● Depth (mm): 34
● H x W x D: 1.2 in x 3.7 in x 1.34 in
● Net Weight: 8.8175 OZ
● Gross Weight: 5.6 OZ
Applications:
They are mainly used in
● General purpose inverters
● Servo controls
● High Powered Switching
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11 buyer reviews from Singapore
Sarah Jackson
Length of registration:7 years
This integrated circuit is great! It is easy to install and use, and it works perfectly. I have had no issues with it at all. It is very reliable and I would highly recommend it to anyone looking for a quality integrated circuit.
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03/17/2023
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BSM75GB120DN2
BSM75GB120DN2 has several brands around the world that may have alternate names for BSM75GB120DN2 due to regional differences or acquisition. BSM75GB120DN2 may also be known as the following names:
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