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Utsource certified used parts
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Description
Fully Protected 4 Terminal Programmable Current Sensing High Side Switch
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Preview of the first 3 pages of the data sheet
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IRFHS9301TRPBF : -30V Single P-Channel HEXFET Power MOSFET In A PQFN 2mm X 2mm Package -30V Single P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package IRLR2905ZTRPBF : Fet - Single Discrete Semiconductor Product 42A 55V 110W Surface Mount; MOSFET N-CH 55V 42A DPAK Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 55V ; Current - Continuous Drain (Id) @ 25° C: 42A ; Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V ; Input Capacitance (Ciss) @ Vds: 1570pF @ 25V ; Power - Max: 110W ; Packaging: T AFL12015DYPBF : 2-OUTPUT 100 W DC-DC REG PWR SUPPLY MODULE Specifications: Package Type: Other, 0.380 INCH, LOW PROFILE, SEAM WELDED PACKAGE-12 ; Output Voltage: 12.92 to 15.5 volts ; Input Voltage: 80 to 160 volts ; Output Power: 100 watts (0.1340 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F) CPA135T91A18BA4-12PBF : N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Number of units in IC: 6 IRF5210-009 : 35 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0600 ohms ; Number of units in IC: 1 IRHM93250UPBF : 14 A, 200 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.3300 ohms ; Package Type: TO-254AA, 3 PIN ; Number of units in IC: 1 IRKH41/16AS90PBF : 70.65 A, 1000 V, SCR, TO-240AA Specifications: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 70.65 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: ADD-A-PAK-5 ; Pin Count: 5 IRKT56/08S90 : 94.2 A, 400 V, SCR, TO-240AA Specifications: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 94.2 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: ADD-A-PAK-7 ; Pin Count: 7 P404WPBF : 31.4 A, 1000 V, SCR Specifications: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 31.4 amps ; IGT: 60 mA ; Standards and Certifications: RoHS ; Pin Count: 3 SD253R12S20MSV : 250 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB Specifications: Configuration: Single ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 250000 mA ; trr: 2 ns ; VRRM: 1200 volts ; RoHS Compliant: RoHS |
Same catergory
Same catergory |
2SK2958 : Silicon N Channel MOS Fet High Speed Power Switching: 30v, 75a. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips. 30EPF : Fast Soft Recovery Rectifier Diode. The & 30CPF. soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are: Output rectification and freewheeling in inverters, choppers and converters. 402GD061-358CTV : . SKiiP 402GD061-358CTV I. Power section Absolute maximum ratings Symbol Conditions IGBT VCES VCC 1) Operating DC link voltage VGES (70) °C Inverse diode IF = -IC (70) °C IFSM = 150 °C, = 10ms; sin I2t (Diode) Diode, = 150 °C, Tj , (Tstg) Visol AC, 1min. Symbol IGBT VCEsat VCEO rCE ICES Conditions SKiiP technology inside low loss IGBTs CAL diode technology. DB151G : Glass Passivated. Pakage = DB ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 1.5 ;; Ifsm (A)= 50. MF35 : 40a 1200v Stud Fast Recovery Diode. APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics Type Number Repetitive Peak Reverse Voltage VRRM V Conditions Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF35-1200R. Outline type. PHP45NQ11T : N-channel Trenchmos (tm) Standard Level Fet.-channel Enhancement Mode Field-effect Transistor in a Plastic Package Using Trenchmos Technology. Fast Switching Low On-state Resistance. Applications Dc-to-dc Converters Switched-mode Power Supplies.. SBR2535 : Schottky Rectifier, Package : DO-4. BC847BLP : Complementary PNP Type Available (BC857BLP) Ultra-Small Leadless Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability. STP12NK60Z : N-CHANNEL 600V - 0.53Ohm - 10A TO220/TO-220FP ZENER-PROTECTED SUPERMESH™ MOSFET. 06031C101JAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.0001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology. CMPSH1-4BK : 1 A, SILICON, SIGNAL DIODE. s: Package: SOT23, SOT-23F, 3 PIN ; Number of Diodes: 1 ; IF: 1000 mA. DDZX10C-13 : 10 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS. IRF330PBF : 5.5 A, 400 V, 1.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 1.22 ohms ; Package Type: TO-3, HERMETIC SEALED, MODIFIED TO-3, 2 PIN ; Number of units in IC: 1. STRH60N20FSY1 : 53 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; Package Type: HERMETIC SEALED PACKAGE-3 ; Number of units in IC: 1. ZS123 : 0.25 A, SILICON, SIGNAL DIODE. s: Package: GLASS PACKAGE-2 ; Number of Diodes: 1 ; IF: 250 mA. 2N7334-QR-B : 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.8000 ohms ; Package Type: HERMETIC SEALED PACKAGE-14 ; Number of units in IC: 4. 500R102T350BB2B : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 1000 uF, CHASSIS MOUNT. s: : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 350 volts ; Leakage Current: 1050 microamps ; ESR: 130 milliohms ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 95 C (-40 to 203 F). |
11 buyer reviews from Singapore
George Chan
Length of registration:16 years
The goods have been received. The packaging is very good. By the way, there are not a few in the list. The logistics is also very fast
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09/02/2022
Vincent Loh
Length of registration:5 years
Good
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03/18/2019
Steven Tan
Length of registration:6 years
Very satisfied with
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11/28/2018
Doris Boo
Length of registration:14 years
Very well-packed
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01/05/2017
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IR3312
IR3312 has several brands around the world that may have alternate names for IR3312 due to regional differences or acquisition. IR3312 may also be known as the following names:
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