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Description
200V N-Channel MOSFET
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
● 28A, 200V, RDS(on)= 0.085Ω @VGS= 10 V
● Low gate charge ( typical 95 nC)
● Low Crss ( typical 75 pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Preview of the first 3 pages of the data sheet
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Same catergory
241 buyer reviews from United Kingdom
Brian Clark
Length of registration:7 years
The IRF650B is a high-performance, low-cost MOSFET transistor from Utsource. It features a low on-resistance of 0.07 ohms, a high breakdown voltage of 500V, and a maximum drain current of 10A. It is suitable for use in a wide range of applications, including power supplies, motor control, and switching circuits.
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03/17/2023
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All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
IRF650B
IRF650B has several brands around the world that may have alternate names for IRF650B due to regional differences or acquisition. IRF650B may also be known as the following names:
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Unit Price:2.04867
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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