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国家代码MODULE
Infineon/eupec
11+;07+
EconoPACK? 3 1200 V, 150 A sixpack IGBT module with fast TRENCHSTOP? IGBT4, Emitter Controlled 4 Diode and NTC. Also available as variation with PressFIT mounting technology: FS150R12KT4_B11 and as variation with doubled mounting Emitter Controlled 4 diode for active front-end applications: FS150R12KT4_B9.
Description: This is a 1200V, 150A, 4-pack IGBT module from Infineon/Eupec. Features: 1200V blocking voltage 150A current rating Low switching losses Low EMI Low gate charge High sho
库存:2000
起订量:1
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SKM100GB12V is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a voltage rating of 1200V and a current rating of 100A. It is designed for use in motor drives, weldi
库存:2000
起订量:1
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Description: The SKM400GB124D is a three-phase, insulated-gate bipolar transistor (IGBT) module from Semikron. It is designed for use in motor drives, welding machines, and uninterruptible power suppl
库存:2000
起订量:1
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库存:2000
起订量:1
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MODULE
Infineo
07+
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
库存:2000
起订量:1
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MITSUBISHI CM400DY1-12E MODULE is a current limiting type PWM Inverter Module from the Mitsubishi series. It has a maximum rating of 400A and a 690V maximum operating voltage. This device is used to c
库存:2000
起订量:1
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SKM600GA124D is a 1200V, 600A, IGBT module manufactured by Semikron. It is a three-phase, full-bridge module with a high power density and low losses. The module is designed for applications such as m
库存:2000
起订量:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75J2YS40 is a 2GB DDR3 SDRAM module from Toshiba America Electronic Components. Features: - 2GB DDR3 SDRAM - 200-pin SO-DIMM - PC3-12800 (1600MHz) - Unbuffered - Non-ECC - 1.5V A
库存:2000
起订量:1
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV VBRCES | 150A IC
BSM150GB100D is a module manufactured by EUPEC. It is a three-phase IGBT module with a rated current of 150A and a voltage of 1000V. It is designed for use in power electronics applications such as mo
库存:2000
起订量:1
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FS75R17KE3 is a module made by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a voltage rating of 1700V and a current rating of 75A. It is designed for use in motor control, weld
库存:2000
起订量:1
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库存:2000
起订量:1
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The CM400DY-12E is a power module manufactured by Mitsubishi. It is a three-phase bridge rectifier module that is used to convert alternating current (AC) to direct current (DC). It has a maximum curr
库存:2000
起订量:1
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MODULE
Eupec
N/A
IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 15.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3; Housing: EasyPIM? 2;
Description: The FP15R12KE3 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a high-power module designed for use in motor control and power conversion applications.
库存:2000
起订量:1
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MODULE
Eupec
10+
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi
库存:2000
起订量:1
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MODULE
Eupec
34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode
库存:2000
起订量:1
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库存:2000
起订量:1
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Description: The FS50R06YE3 is a 6A, 50V, N-channel Power MOSFET from Infineon Technologies. Features: Low on-resistance Low gate charge Low input capacitance Low threshold voltage Fast switchi
库存:2000
起订量:1
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库存:2000
起订量:1
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库存:2000
起订量:1
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CM200DY-24A is a power module manufactured by Mitsubishi Electric. It is a 1200V/200A IGBT module with a built-in diode. It is designed for use in motor control, power conversion, and power supply app
库存:2000
起订量:1
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