BLF6G27LS-135
SOT502B
NXP Semiconductors
09+
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国家代码H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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SMD
Fujitsu
08+
L-Band Medium & High Power GaAs FET.The FLU35XM is a GaAs FET designed for base station applications in thePCN/PCS frequency range
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TO-272
Freescale
09+,07+
RF LDMOS Wideband IntegratedPower Amplifiers 1805-1990MHZ 15W 26V for cellular applications: GSM, GSM EDGE, PHS,TDMA, CDMA, W - CDMA and TD - SCDMA
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SMD
Mitsubishi
16+
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.
RA60H1317M1 is a Mitsubishi RF power transistor module designed for use in radio communication equipment. It is a high-power, high-efficiency, high-frequency device that is capable of operating in the
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