2SC2150 C2150
SMD
NEC
06+
SI NPN 20V 30mA 250mW 6GHz FOR UHF
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国家代码ni-780s
Freescale
09+
MRF7S21210HS 2110 - 2170 MHz, 63 W AVG., 28 V [RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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SMD
Fujitsu
08+
L-Band Medium & High Power GaAs FET.The FLU35XM is a GaAs FET designed for base station applications in thePCN/PCS frequency range
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SMD
Mitsubishi
16+
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO MITSUBISHI RF MOSFET MODULE
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SMD
Mitsubishi
16+
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range.
RA60H1317M1 is a Mitsubishi RF power transistor module designed for use in radio communication equipment. It is a high-power, high-efficiency, high-frequency device that is capable of operating in the
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