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产品描述
43A, 1200V, NPT Series N-channel Igbt
本网站上使用的所有产品名称,商标,品牌和徽标均为其各自所有者的财产。 具有这些名称,商标,品牌和徽标的产品的描述或销售仅用于标识目的,并不表示与任何权利所有者有任何隶属关系或授权。
数据表前3页预览
来自同一制造商的某些零件号
Some Part number from the same manufacture Fairchild Semiconductor |
HGTG11N120CND 43A, 1200V, NPT Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG12N60A4 600V SMPS Series N-channel Igbt |
HGTG12N60A4D 600V, SMPS Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG12N60B3 HGTG12N60B3 - 12A, 600V, N-channel Ufs Series Igbt TO-247 |
HGTG12N60B3D 600V, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG12N60C3D 24A, 600V, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG18N120BN 54A, 1200V, NPT Series N-channel Igbt |
HGTG18N120BND 54A |
HGTG20N120CN 63A, 1200V, NPT Series N-channel Igbt |
HGTG20N120CND 63A, 1200V, NPT Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG20N60A4 600V, SMPS Series N-channel Igbts |
HGTG20N60A4D 600V |
HGTG20N60B3 600V, Ufs Series N-channel Igbt |
HGTG20N60B3D 600V, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG20N60C3 45A, 600V, Ufs Series N-channel Igbt |
HGTG20N60C3D 45A, 600V, Ufs Series N-channel Igbt With Anti-parallel Hyperfast Diode |
HGTG20N60C3R 40a, 600v, Rugged Ufs Series N-channel Igbts |
HGTG27N120BN 72A, 1200V, NPT Series N-channel Igbt |
HGTG30N120CN 75A, 1200V, NPT Series N-channel Igbt |
HGTG30N60A4 600V, SMPS Series N-channel Igbt |
HGTG30N60A4D 600V |
1.5KE300A : 1500 Watt Transient Voltage Suppressors 74LCX16373G : CMOS/BiCMOS->LVT/ALVT/LCX/LPT Family->Low Voltage Low Voltage 16-Bit Transparent Latch With 5V Tolerant Inputs And Outputs FQI12N20 : 200V N-channel QFET IRFW530A : 100V N-channel A-FET MOC8050TM : Photodarlington Optocoupler (No Base Connection) MOC3052FM : Optoisolator - Triac, Scr Output Channel Surface Mount 6-SMD; OPTOCOUPLER TRIAC ZC 6-SMD Specifications: Mounting Type: Surface Mount ; Package / Case: 6-SMD ; Voltage - Isolation: 7500Vpk ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant FXLA104UMX : Logic - Translator Integrated Circuit (ics) Voltage Cut Tape (CT) Voltage; TRANSLATOR 4BIT DUAL LV 16UMLP Specifications: Package / Case: 16-UMLP ; Packaging: Cut Tape (CT) ; Input Type: Voltage ; Output Type: Voltage ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant FDP2570S62Z : 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 150 volts ; rDS(on): 0.0800 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1 FDP8N60ZU : 6.5 A, 600 V, 1.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1.35 ohms ; Package Type: TO-220, ROHS COMPLIANT, TO-220, 3 PIN ; Number of units in IC: 1 |
同品类
Same catergory |
15CGQ100 : 5 to 100 Amp. Schottky Rectifier 35 Amp. Major Ratings and Characteristics IF(AV) VRRM (Per Leg) IFSM = 8.3ms half-sine (Per Leg) TJ =125°C (Per Leg) 15CGQ100 Units A V / The 15CGQ100 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse. 1N3643 : High Voltage Rectifiers. 2N3635 : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 140V ;; IC(cont) = 1A ;; HFE(min) = 100 ;; HFE(max) = 300 ;; @ Vce/ic = 10V / 50mA ;; FT = - ;; PD = 1W. 2N3636 : PNP Silicon General Purpose Transistor. HM3906 : Emitter to Base Voltage:5V; PNP Epitaxial Planar Transistor For General Purpose Switching And Amplifier Applications. IXFR180N10 : 100V HiperFET Power MOSFET. (Electrically Isolated Back Surface) Single MOSFET Die Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions to 150°C; RGS 1 MW Continuous Transient = 25°C (MOSFET chip capability) External lead (current limit) = 25°C, Note IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS = 25°C Isolated back surface* G = Gate. PHMB300B12 : Device = IGBT() ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Single Die ;; Data Sheet(pdf) = _phmb300b12.pdf ;; Outline(dxf) = Phmb300b12.dxf ;; Remarks = ;; = ;; = ;; = ;;. SKT600 : . ITRMS (maximum values for continuous operation) A (56 °C) SKT 760/04 D SKT 760/08 D SKT 760/12 E SKT 760/14 E SKT 760/16 E SKT 760/18 E ITAV (sin. 180; T case DSC) ITAV ITSM i2t tgd tgr (di/dt)cr tq VT VT(TO) rT IDD; IRD VGT IGT VGD IGD Rthjc sin. 180; (Tcase DSC Tvj °C; ms 125 °C; ms 25 °C; ms 125 °C; 1 A diG/dt = 1 A/µ s Hermetic metal cases with. SUT487J : Complex Transistor. Small Signal Transistor , General Purpose Bipolar Complex Transistor. BDW42BG : 15 A, 100 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: TO-220, PLASTIC, TO-220AB, 3 PIN. CR05AS-4AB : SCR. s: Thyristor Type: SCR ; Package Type: SOT-89, 3 PIN ; Pin Count: 3. EPF8264G : DATACOM TRANSFORMER FOR 10/100 BASE-TX APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -25 to 105 C (-13 to 221 F). ERTJZEA151H : RESISTOR, TEMPERATURE DEPENDENT, NTC, 150 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Resistance Range: 150 ohms ; Tolerance: 3 +/- % ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards and Certifications: RoHS. IHA103BA : 1 ELEMENT, 250 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Axial, WIRE ; Application: General Purpose, High Current ; Inductance Range: 250 microH ; Rated DC Current: 1800 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F). IXSH16N60U1 : 32 A, 600 V, N-CHANNEL IGBT, TO-247AD. s: Polarity: N-Channel ; Package Type: TO-247, TO-247AD, 3 PIN ; Number of units in IC: 1. MJFR0593 : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER. RN141TS : SILICON, PIN DIODE. s: Package: ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-2 ; Number of Diodes: 1. S1395146 : SHIELDED, VARIABLE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: Gull ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Configuration: Variable ; Application: RF Choke. SB6100F : 6 A, 100 V, SILICON, RECTIFIER DIODE, TO-220. s: Rectifier Configuration / Technology: Schottky ; Package: PLASTIC, ITO-220A, 2 PIN ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 6000 mA. 2W005G/51-E4 : 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 60000 mA ; VBR: 50 volts ; RoHS Compliant: RoHS ; Package: PLASTIC, CASE WOG, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4. |
有1088个来至China的买家评价
Matthew Moore
Length of registration:7 years
Thank you for providing us with the IC HGTG11N120CND. We have been using this IC in our product and have been very pleased with its performance. It has been reliable and efficient, providing us with the power and speed we need. We would definitely recommend this IC to others. Thank you again for your excellent product.
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03/17/2023
Thomas
Length of registration:1 years
The part was perfect, but it was first time I used Utsource I got it figured out now thank you
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10/24/2022
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HGTG11N120CN
HGTG11N120CN has several brands around the world that may have alternate names for HGTG11N120CN due to regional differences or acquisition. HGTG11N120CN may also be known as the following names:
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