RequiredBSM35GP120
类别: IGBT
产品描述： IGBT Module
Price range ($)
52.78224 69.15150
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BSM35GP120
BSM35GP120 has several brands around the world that may have alternate names for BSM35GP120 due to regional differences or acquisition. BSM35GP120 may also be known as the following names:
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产品描述
BSM35GP120
库存:10014 |
Eupec 10+ |
IGBT Module |
≥1: US $58.67400 US $55.15356 ≥2: US $58.67400 US $55.15356 ≥5: US $56.71820 US $53.31511 ≥10: US $55.93588 US $52.57973 ≥20: US $55.54472 US $52.21204 ≥30: US $54.76240 US $51.47666 ≥50: US $54.76240 US $51.47666 ≥100: US $54.37124 US $51.10897 ≥500: US $53.98008 US $50.74128
更多:
询价
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BSM35GP120
库存:33943 |
Eupec 05+ |
IGBT Module |
≥1: US $59.30400 US $55.74576 ≥2: US $59.30400 US $55.74576 ≥5: US $57.32720 US $53.88757 ≥10: US $56.53648 US $53.14429 ≥20: US $56.14112 US $52.77265 ≥30: US $55.35040 US $52.02938 ≥50: US $55.35040 US $52.02938 ≥100: US $54.95504 US $51.65774 ≥500: US $54.55968 US $51.28610
更多:
询价
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BSM35GP120
库存:10000 |
IGBT Module |
≥1: US $57.37200 US $53.92968 ≥2: US $57.37200 US $53.92968 ≥5: US $55.45960 US $52.13202 ≥10: US $54.69464 US $51.41296 ≥20: US $54.31216 US $51.05343 ≥30: US $53.54720 US $50.33437 ≥50: US $53.54720 US $50.33437 ≥100: US $53.16472 US $49.97484 ≥500: US $52.78224 US $49.61531
更多:
询价
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BSM35GP120
库存:2183 |
Infineon Technologies AG 15+ |
IGBT Module |
≥1: US $69.15150 US $65.00241
更多:
询价
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BSM35GP120
库存:14247 |
Eupec 12+ |
IGBT Module |
≥1: US $58.67400 US $55.15356
更多:
询价
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Introduction:
The Insulated Gate Bipolar Transistor also called IGBT for short, is a cross between the standard Bipolar Junction Transistor, (BJT) and the Field Effect Transistor, (MOSFET) which makes it as good as a flexible semiconductor device. The IGBT Transistor captures the best parts of these two types of standard transistors, high input distortion and high MOSFET switching speed with low saturation voltage of bipolar transistor and combine to form new form of transistor.
Core Parameters:
· Metal base plate insulated in nature
· Free wheel diode
· Power module
· Full bridge 3 phase
Equivalent Circuit Diagram:
Important Characteristics:
DC forward current | 10 A |
Collector-Emitter Voltage | 1200V |
Gate-Emitter Voltage | +20, -20 |
Electrical Characteristics:
Gate threshold voltage | 4.5-5.5-6.5 V |
Gate-emitter leakage current | 220 nA |
Transconductance | 23 S |
Fall time | 70-100 ns |
Working:
Basically, this module is an insulated gate bipolar transistor used for high switching. IGBT combines with the low value of saturation voltage of transistor with high speed and high impedance of MOSFET. When both these combined with each other they produced a high switching and provide a conduction current to bi-polar transistor and voltage is controlled by MOSFET.
Applications:
· For Fast Switching Devices
· Things which involves electrical control
· Motor Control Applications
