FS150R12KE3
类别: IGBT
产品描述: EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3
Price range ($)
72.47208 108.96600
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FS150R12KE3
FS150R12KE3 has several brands around the world that may have alternate names for FS150R12KE3 due to regional differences or acquisition. FS150R12KE3 may also be known as the following names:
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产品描述
FS150R12KE3
库存:33924 |
Eupec |
EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3 |
≥1: US $78.77400 US $74.04756 ≥2: US $78.77400 US $74.04756 ≥5: US $73.52240 US $69.11106 ≥10: US $73.52240 US $69.11106 ≥20: US $73.52240 US $69.11106 ≥30: US $73.52240 US $69.11106 ≥50: US $73.52240 US $69.11106 ≥100: US $72.99724 US $68.61741 ≥500: US $72.47208 US $68.12376
更多:
询价
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FS150R12KE3
库存:33951 |
Eupec 05+ |
EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3 |
≥1: US $88.23600 US $82.94184 ≥2: US $88.23600 US $82.94184 ≥5: US $82.35360 US $77.41238 ≥10: US $82.35360 US $77.41238 ≥20: US $82.35360 US $77.41238 ≥30: US $82.35360 US $77.41238 ≥50: US $82.35360 US $77.41238 ≥100: US $81.76536 US $76.85944 ≥500: US $81.17712 US $76.30649
更多:
询价
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FS150R12KE3
库存:2561 |
Infineon Technologies AG 17+ |
EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3 |
≥1: US $108.96600 US $102.42804
更多:
询价
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FS150R12KE3
库存:9999 |
Eupec 13+ |
IGBT-Module |
≥1: US $97.79000 US $91.92260
更多:
询价
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FS150R12KE3
库存:160 |
Infineon Technologies AG 2018+ |
EconoPACK?3 1200 V, 150 A sixpack IGBT module with TRENCHSTOP? IGBT3 and NTC. Also available as fast switching device: FS150R12KT3 |
≥1: US $93.87840 US $88.24570
更多:
询价
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Introduction:
This is a 150 A, 1200 V six – pack IGBT manufactured by Infineon. IGBT is a switching device that can be used for fast switching with high efficiency in different types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). It merges the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome gotten from this combination delivers the output switching and conduction features of a bipolar transistor, but its voltage is controlled like a MOSFET.
Features:
● It Includes fast free-wheeling diodes
● Packaged with insulated metal base plate
Parameters:
● Type: Six-Pack
● Vces: 1,200 Volts DC
● Ic: 150 Amps
● Vges +/-: 20
● Ices Max: 5 MilliAmps
● Iges Max: 0.4 MicroAmps
● Vge(th) Min/Max: 6.5 Volts
● Vce(sat) Max: 2.15 Volts
● Height (mm): 20.5
● Width (mm): 122
● Depth (mm): 62
● H x W x D: .81 in x 4.8 in x 2.44 in
● Net Weight: 10.581 OZ
● Gross Weight: 10.581 OZ
Applications:
They are mainly used in
● General purpose inverters
● Servo controls
● High Powered Switching