GAL22V10D-10LJ
类别: 集成电路
产品描述: High Performance E2CMOS PLD Generic Array Logic
Price range ($)
1.17348 5.02920
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GAL22V10D-10LJ
GAL22V10D-10LJ has several brands around the world that may have alternate names for GAL22V10D-10LJ due to regional differences or acquisition. GAL22V10D-10LJ may also be known as the following names:
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产品描述
GAL22V10D-10LJ
库存:5 |
Lattice 9816+ |
High Performance E2CMOS PLD Generic Array Logic |
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GAL22V10D-10LJ
库存:9999 |
Lattice 05+ |
High Performance E2CMOS PLD Generic Array Logic |
≥1: US $5.02920 US $4.52628 ≥5: US $4.77774 US $4.29997 ≥10: US $4.52628 US $4.07365 ≥20: US $4.40055 US $3.96050 ≥50: US $4.27482 US $3.84734 ≥100: US $4.14909 US $3.73418 ≥200: US $4.02336 US $3.62102 ≥500: US $3.97307 US $3.57576 ≥1000: US $3.89763 US $3.50787
更多:
询价
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GAL22V10D-10LJ
库存:37949 |
Lattice 11+ |
High Performance E2CMOS PLD Generic Array Logic |
≥1: US $2.93370 US $2.64033 ≥5: US $1.95580 US $1.76022 ≥10: US $1.76022 US $1.58420 ≥20: US $1.71133 US $1.54019 ≥50: US $1.66243 US $1.49619 ≥100: US $1.61354 US $1.45218 ≥200: US $1.56464 US $1.40818 ≥500: US $1.54508 US $1.39057 ≥1000: US $1.51575 US $1.36417
更多:
询价
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GAL22V10D-10LJ
库存:39 |
Lattice 08+ |
High Performance E2CMOS PLD Generic Array Logic |
≥1: US $1.85801 US $1.67221
更多:
询价
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Features
● HIGH PERFORMANCE E2CMOSR TECHNOLOGY
— 4ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5ns Maximum from Clock Input to Data Output
— UltraMOS Advanced CMOS Technology
● ACTIVE PULL-UPS ON ALL PINS
● COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices
● 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA Typical Icc on Low Power Device
— 45mA Typical lcc on Quarter Power Device
● E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
● TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
● PRELOADAND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
● APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic speed Upgrade
● ELECTRONIC SIGNATURE FOR IDENTIFICATION
Description
The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user.The GAL22V10 is fully function/fuse map/parametric compatible with standard bipolar and CMOS 22V10 devices.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture.As a result,Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.