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Home > Elec-component > IC Chips > PMIC - Power Distribution Switches, Load Drivers
SOT-223
On Semiconductor
12+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description: Low-Side MOSFET Driver Features: Operating Voltage Range: 4.5V to 18V Output Drive Capability: 2A Low Propagation Delay: 4ns Low Output Impedance: 0.3Ω Low Quiescent Current: 5mA
Stock:10000
Minimum:4
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SOT23-5
STMicroelectronics
10
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Stock:10000
Minimum:2
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Description: The VNB14NV04 is an N-channel enhancement mode vertical DMOS transistor with a low on-resistance and low gate charge. Features: - Low on-resistance - Low gate charge - Low input capacita
Stock:10000
Minimum:2
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Description: VN16B is a N-channel enhancement mode vertical DMOS transistor. Features: Low on-resistance Low gate charge Low input capacitance Fast switching Avalanche rated High temper
Stock:10000
Minimum:1
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DSBGA-6
Texas Instruments
1038+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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Stock:2000
Minimum:1
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SOP14S
Infineon Technologies AG
11+
Smart High-Side Power Switch PROFET Two Channels, 140 m? 1 BTS52 31GS Datasheets Search Partnumber : Start with "BTS52 31GS " - Total : 23 ( 1/1 Page) NO Part no Electronics Description View Electronic Manufacturer 23 BTS5210G Smart High-Side Power Switch Two Channels: 2 x 140m? Status Feedback
Description: BTS5231GS is an N-channel logic level enhancement mode power field-effect transistor (FET) produced by Infineon Technologies. Features: - Low on-resistance - High current capability - Lo
Stock:10000
Minimum:2
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Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - Low Input Capacitance - High Avalanche Energy - Hig
Stock:10000
Minimum:2
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Description: IRSF3011 is a N-channel enhancement mode power MOSFET manufactured by IR. Features: * Low On-Resistance * Low Gate Charge * High Current Capability * Fast Switching Speed Applications:
Stock:10000
Minimum:2
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SOT223
On Semiconductor
0617+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description: NIF62514T1G is a P-channel MOSFET transistor with a SOT223 package. Features: - Drain-Source Voltage (Vdss): -20V - Gate-Source Voltage (Vgs): -4.5V - Continuous Drain Current (Id): -1.2
Stock:10000
Minimum:2
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TSSOP16
Vishay Siliconix
1244+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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TO-263-5
International Rectifier
1123+PB
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description: The AUIR3315S is a N-Channel MOSFET designed for high-speed switching applications. Features: Low on-resistance Low gate charge Fast switching Low input capacitance Low threshold vo
Stock:10000
Minimum:1
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SO-8
STMicroelectronics
18
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Stock:10000
Minimum:2
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SOT-563
Vishay Siliconix
16+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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SOT23-5
STM
1350+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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SOP-8
STMicroelectronics
0935+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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TO-263
International Rectifier
1331A
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Stock:2000
Minimum:1
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TO252
On Semiconductor
16+PBF
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description: Low-Side MOSFET Driver Features: Low-Side MOSFET Driver High-Side MOSFET Driver High-Side/Low-Side MOSFET Driver 3.3V Logic Compatible Low-Side Output Voltage: 0.5V Hig
Stock:10000
Minimum:1
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SSOP24
STMicroelectronics
10+
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching ESD Protection Halogen Free Applications: DC/DC Converters Load Switch Battery Management Motor Co
Stock:10000
Minimum:1
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Stock:2000
Minimum:1
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