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Inicio > Componentes Electrónicos > Chips IC > PMIC -Interruptores de distribución de energía, controladores de carga.
SOP8
Alpha & Omega Semiconductor
10+PBF
IC LOAD SW HI-SIDE CC 8SOIC
Description: AOZ1360AIL is a high-efficiency, synchronous rectification, step-down DC-DC converter with integrated MOSFETs. Features: High efficiency up to 95% Input voltage range: 4.5V to 18V Out
Depósito:10000
Mínimo:1
Favorita
The TDE1898RDP is a monolithic integrated circuit manufactured by STMicroelectronics. It is a dual low-power operational amplifier with rail-to-rail inputs and outputs. It is designed for low-voltage
Depósito:10000
Mínimo:2
Favorita
SOT252-5
International Rectifier
16+
IC SW IPS 1CH HIGH SIDE DPAK-5
Description: AUIPS6021R is a 5-pin SOT252-5 package, which is an ultra-low-voltage, low-power, low-saturation, low-on-resistance, P-channel MOSFET. Features: Ultra-low-voltage operation: VDS(max)
Depósito:10000
Mínimo:2
Favorita
Description: N-Channel Enhancement Mode MOSFET Features: - Low On-Resistance - Low Input Capacitance - Low Input/Output Leakage - Low Threshold Voltage - High Speed Switching Applications: - DC/DC
Depósito:10000
Mínimo:2
Favorita
Description: The MIC2026-2YM-TR is a dual-channel, low-side, MOSFET driver with a 2A peak output current. It is designed to drive N-channel MOSFETs in low-side switching applications. Features: * 2A
Depósito:10000
Mínimo:2
Favorita
PowerSO-10 Exposed Bottom Pad
STMicroelectronics
IC IGNITION COIL DRIVER POWERSO1
Description: The VB526SPTR-E is a PowerSO-10 exposed bottom pad from STMicroelectronics. It is a surface mount package with a 10-pin configuration. Features: 10-pin configuration Exposed bottom pa
Depósito:10000
Mínimo:1
Favorita
The DS3658N is a high-speed, low-power, dual-channel, non-inverting, octal buffer/line driver with 3-state outputs from Texas Instruments. It is designed to provide high-performance bus-oriented syste
Depósito:10000
Mínimo:2
Favorita
The VN820SPTR-E is an integrated circuit (IC) manufactured by STMicroelectronics. It is a high-side power switch designed for automotive applications. It is a monolithic integrated circuit with a logi
Depósito:10000
Mínimo:2
Favorita
TO-263
Infineon Technologies AG
06/07
IC SWITCH SMART LOWSIDE TO220SMT
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: Low On-Resistance RDS(on) Low Gate Charge Fast Switching Logic Level Gate Drive Avalanche Rated RoHS Complia
Depósito:10000
Mínimo:2
Favorita
Description: N-Channel PowerTrench MOSFET Features: Low On-Resistance Low Gate Charge Low Input Capacitance Fast Switching 100% UIL Tested RoHS Compliant Halogen Free Lead Free
Depósito:2000
Mínimo:1
Favorita
Description: The MIC2026A-2YM is a dual-channel, low-side, MOSFET driver. It is designed to drive two N-channel MOSFETs with a single logic input. Features: Low-side MOSFET driver with two channels
Depósito:10000
Mínimo:4
Favorita
Description: VNP35N07-E is a N-channel enhancement mode vertical power MOSFET from STMicroelectronics. Features: Low on-resistance Low gate charge Low input capacitance Low threshold voltage Ava
Depósito:10000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Description: The TLE7240SL is an integrated circuit from Infineon Technologies. It is a low-side driver IC designed for automotive applications. Features: * Integrated MOSFET with low on-resistance *
Depósito:2000
Mínimo:1
Favorita
Description: L99MC6TR is a low-power, low-voltage, low-dropout regulator (LDO) with an output current of up to 600mA. Features: - Low-power, low-voltage, low-dropout regulator (LDO) - Output current
Depósito:2000
Mínimo:1
Favorita
Depósito:10000
Mínimo:2
Favorita
Description: TDE1767DP is a low-power, low-voltage, 8-pin DIP (dual in-line package) integrated circuit (IC) manufactured by STMicroelectronics. It is a low-power, low-voltage, high-performance, low-c
Depósito:5000
Mínimo:1
Favorita
SOT223
International Rectifier
05-06/
Fully Protected Power MOSFET SwitchMOSFET
Depósito:10000
Mínimo:3
Favorita
Depósito:10000
Mínimo:4
Favorita
SOP-8
STMicroelectronics
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics? VIPower? M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin
Description: VNS3NV04DP-E is a low-voltage, low-power, single-channel, high-speed, low-side, N-channel MOSFET driver from STMicroelectronics. Features: High-speed switching: tON/tOFF = 10/15 ns L
Depósito:10000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.