MDQ100-16
MDQ 100A 1600V MDQ100-16
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Inicio > Componentes Electrónicos > Módulos > rectificadores.
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Description: The DD350N16K is an EUPEC module designed for use in medium-voltage applications. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum voltage rating of 160
Depósito:2000
Mínimo:1
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Depósito:2000
Mínimo:1
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SKDT100/14 is a module manufactured by Semikron. It is a Thyristor/Diode Module with a voltage rating of 100 V and a current rating of 14 A. It is designed for use in applications such as motor contro
Depósito:2000
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MODULE
Eupec
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IGBT Modules up to 3300V Diodes; Package: A-IHM130-1; IF typ: 400.0 A; Configuration: Diode Modules; Technology: IGBT2 Standard; Housing: IHV 130 mm; Features: -;
Depósito:2000
Mínimo:1
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Depósito:197
Mínimo:1
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SKKD46/08 is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a maximum current rating of 46A. It has a voltage rating of 800V and a forward voltage drop of 1.2V. It
Depósito:2000
Mínimo:1
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Depósito:53426
Mínimo:6
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The SKD25/02 is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in applications such as motor drives, power supplies, and UPS systems. The module features a max
Depósito:5000
Mínimo:1
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Depósito:2000
Mínimo:1
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Depósito:2000
Mínimo:1
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SKD60/16 is a three-phase bridge rectifier module manufactured by Semikron. It is a compact, low-loss, and high-current module designed for use in power electronic applications. The module has a maxim
Depósito:2000
Mínimo:1
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Description: The DD40F120 is a 1200V, 40A, dual diode module from SanRex. Features: 1200V, 40A Low forward voltage drop Low reverse leakage current High surge current capability High reliabilit
Depósito:2000
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Depósito:8732
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MODULE
Eupec
Diode Bridges with BC; Package: AG-ECONO2-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled with brake chopper ; Housing: EconoBRIDGE? ;
DDB6U84N16RR is an IGBT eupec power module made by Infineon Technologies. It is a double-sided cooled, 16-pack IGBT module with a 1200V blocking voltage and an 800A/1200A current carrying capability.
Depósito:2000
Mínimo:1
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MODULE
Infineon Technologies AG
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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Depósito:2000
Mínimo:1
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MODULE
Eupec
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Diode Bridges; Package: AG-ISOPACK-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled; Housing: IsoPACK™;
Description: The DDB6U85N16L is an EUPEC module designed for use in medium voltage applications. It is a three-phase, three-level, full-bridge, insulated gate bipolar transistor (IGBT) module with a r
Depósito:2000
Mínimo:1
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Description: The D25XB60 is a 25A 600V fast-recovery diode with a DIP4 package. Features: - Low forward voltage drop - High surge current capability - High junction temperature - Low reverse leakage
Depósito:10000
Mínimo:2
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Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.