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製品の説明
IGBT Modules up to 1200V Dual
Package: AG-62MM-1
IC max: 100.0 A
VCEsat typ: 2.5 V
Configuration: Dual Modules
Technology: IGBT2 Standard
Housing: 62 mm
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データシートの最初の 3 ページのプレビュー
同じメーカーの部品番号
Some Part number from the same manufacture Eupec GmbH & Co KG |
BSM100GB120DN2K |
BSM100GB170DN2 |
BSM100GB60DLC |
BSM100GD120DN2 |
BSM100GD60DLC |
BSM100GP60 |
BSM10GD120DN2 |
BSM10GD120DN2E3224 |
BSM10GP120 |
BSM150GB120DN2 |
BSM150GB170DN2 |
BSM150GB60DLC |
BSM150GD60DLC |
BSM15GD120DN2 |
BSM15GD120DN2E3224 |
BSM15GP120 |
BSM200GA120DN2 |
BSM200GA120DN2S |
BSM200GA170DN2 |
BSM200GA170DN2S |
BSM200GB120DN2 |
D1169S-2000 : DD1200S33K2B5 : DDB6U85N : FS20R06XL4 : FS300R12KF4 : FZ600R17KE3 : T731N : SCR/ Diode Presspacks TT140N : SCR/ Diode Modules TT500N : SCR/ Diode Modules FZ1200R17KF6B2 : Igbt-wechselrichter / Igbt-inverter FF150R12KE3G : 62mm C-series Module with the fast Igbt2 for High-frequency Switching FS10R12YT3 : Igbt-module Igbt-modules |
同じカテゴリ
Same catergory |
10BF10 : 10bf. Series Surface Mountable Ultrafast Recovery Diode. Built-in stress relief Compatible with all pick & place equipments Ultrafast recovery times for high efficiency Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated junction High temperature soldering: 260°C\10 seconds at terminals V RRM , maximum Part Number peak reverse voltage V C 8.3ms single half sine wave. 2SK2804 : . Featuring continuous load current ratings 500 mA for each of the drivers, the Series ULN28xxA/LW and ULQ28xxA/LW highvoltage, high-current Darlington arrays are ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads. Typical power loads totaling over 95 V) can be controlled at an appropriate duty cycle depending. 2SK2843 : VDDS = 600 ;; Id = 10 ;; Package Type = TO-220(NIS). HAF1004 : Thermal Shut down Functiond MOSFET. This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation 6 V Gate. MB4005 : Package Type : MB-50, if : 40A, VRM : 50V. Mounting Hole For #8 Screw Plastic Case With Metal Bottom Any Mounting Position Surge Rating Of 400 Amps Operating Temperature: to +150°C Storage Temperature: to +150°C Device Marking Maximum Reccurrent Peak Reverse Voltage 800V 1000v Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000v Average Forward Current Peak Forward Surge Current. NTE5452 : Silicon Controlled Rectifier (SCR). Repetitive Peak Reverse Voltage VRRM = 30V. RMS On-state Current it = 4A.. SBLF1030 : Schottky Rectifier. Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications High. TGF1350 : GaAs. Discrete MesFET. 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-Gold Metallization for High Reliability Recessed Gate Structure x 0.004 in.) The TriQuint is a single-gate GaAs field-effect transistor (FET) used for low-noise applications to 18 GHz. Bond pad is gold plated for compatibility. NTD4815NH : Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK. Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices Applications CPU Power Delivery DC-DC Converters High Side Switching Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation. AGTA-3601S : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER. APM4030ANUC-TRG : 6000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0250 ohms ; Package Type: GREEN PACKAGE-3 ; Number of units in IC: 1. BC548-T : 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN ; Package Type: TO-92, TO-92, 3 PIN. CB0565A : RESISTOR, NETWORK, FILM, ISOLATED, 0.6 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), BGA, LEAD/ROHS COMPLIANT ; Operating Temperature: -40 to 85 C (-40 to 185 F). D48481-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT ; Power Rating: 1.1 watts (0.0015 HP) ; Operating AC Voltage: 60 volts ; Standards and Certifications: RoHS. IDCP-18131.0UH+/-20% : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Application: General Purpose, High Current ; Inductance Range: 1 microH ; Rated DC Current: 3800 milliamps ; Operating Temperature: -25 to 105 C (-13 to 221 F). N20H9701Y : CAPACITOR, METALLIZED FILM, 0.63 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Capacitance Range: 0.6300 microF ; Mounting Style: CHASSIS MOUNT. TMCJ0E106MTRF : CAPACITOR, TANTALUM, SOLID, POLARIZED, 2.5 V, 10 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.5 volts ; Leakage Current: 0.5000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 0603. ULB122G-B1-TM3-T : 0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251. s: Polarity: NPN ; Package Type: HALOGEN FREE PACKAGE-3. 30458 : CAPACITOR, ELECTRIC DOUBLE LAYER, 500 V, 0.00047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 500 volts ; Mounting Style: Through Hole ; Operating Temperature:. |
Japan からの 44 件のバイヤーレビュー
Nicole Nelson
Length of registration:7 years
I recently purchased the BSM100GB120DN2K integrated circuit and I am very pleased with it. It is a great product and it works perfectly. It is easy to install and it is very reliable. I have had no issues with it and it has been working great. I would highly recommend this product to anyone looking for a reliable integrated circuit.
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03/17/2023
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BSM100GB120DN2
BSM100GB120DN2には世界中にいくつかのブランドがあり、地域の違いや買収によりBSM100GB120DN2の別名が付けられる場合があります。 BSM100GB120DN2は次の名前でも知られています。
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