MDQ100-16
MDQ 100A 1600V MDQ100-16
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국가 코드재고:12512
최소:1
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재고:2000
최소:1
즐겨 찾기
재고:10000
최소:2
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Description: The DD350N16K is an EUPEC module designed for use in medium-voltage applications. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum voltage rating of 160
재고:2000
최소:1
즐겨 찾기
재고:2000
최소:1
즐겨 찾기
SKDT100/14 is a module manufactured by Semikron. It is a Thyristor/Diode Module with a voltage rating of 100 V and a current rating of 14 A. It is designed for use in applications such as motor contro
재고:2000
최소:1
즐겨 찾기
MODULE
Eupec
00+
IGBT Modules up to 3300V Diodes; Package: A-IHM130-1; IF typ: 400.0 A; Configuration: Diode Modules; Technology: IGBT2 Standard; Housing: IHV 130 mm; Features: -;
재고:2000
최소:1
즐겨 찾기
재고:197
최소:1
즐겨 찾기
SKKD46/08 is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a maximum current rating of 46A. It has a voltage rating of 800V and a forward voltage drop of 1.2V. It
재고:2000
최소:1
즐겨 찾기
재고:53426
최소:6
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The SKD25/02 is a three-phase bridge rectifier module manufactured by Semikron. It is designed for use in applications such as motor drives, power supplies, and UPS systems. The module features a max
재고:5000
최소:1
즐겨 찾기
재고:2000
최소:1
즐겨 찾기
재고:2000
최소:1
즐겨 찾기
SKD60/16 is a three-phase bridge rectifier module manufactured by Semikron. It is a compact, low-loss, and high-current module designed for use in power electronic applications. The module has a maxim
재고:2000
최소:1
즐겨 찾기
Description: The DD40F120 is a 1200V, 40A, dual diode module from SanRex. Features: 1200V, 40A Low forward voltage drop Low reverse leakage current High surge current capability High reliabilit
재고:2000
최소:1
즐겨 찾기
재고:8732
최소:10
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MODULE
Eupec
Diode Bridges with BC; Package: AG-ECONO2-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled with brake chopper ; Housing: EconoBRIDGE? ;
DDB6U84N16RR is an IGBT eupec power module made by Infineon Technologies. It is a double-sided cooled, 16-pack IGBT module with a 1200V blocking voltage and an 800A/1200A current carrying capability.
재고:2000
최소:1
즐겨 찾기
MODULE
Infineon Technologies AG
00+
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
재고:2000
최소:1
즐겨 찾기
MODULE
Eupec
00+
Diode Bridges; Package: AG-ISOPACK-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled; Housing: IsoPACK™;
Description: The DDB6U85N16L is an EUPEC module designed for use in medium voltage applications. It is a three-phase, three-level, full-bridge, insulated gate bipolar transistor (IGBT) module with a r
재고:2000
최소:1
즐겨 찾기
Description: The D25XB60 is a 25A 600V fast-recovery diode with a DIP4 package. Features: - Low forward voltage drop - High surge current capability - High junction temperature - Low reverse leakage
재고:10000
최소:2
즐겨 찾기
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