Módulos | Page 19

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NEO-5Q-0-002

MODULE

Ublox

1048+

Utsource Original Store

≥1:

Mex $230.50906

Mex $216.67851

≥5:

Mex $218.98360

Mex $205.84459

≥10:

Mex $207.45815

Mex $195.01066

≥20:

Mex $201.69542

Mex $189.59370

≥50:

Mex $195.93270

Mex $184.17674

≥100:

Mex $190.16997

Mex $178.75977

≥200:

Mex $184.40724

Mex $173.34281

≥500:

Mex $182.10215

Mex $171.17602

≥1000:

Mex $178.64452

Mex $167.92585

From: Mex $178.64452

The NEO-5Q-0-002 is a GPS module manufactured by Ublox. It is a high-performance GPS receiver module with an integrated antenna. It is designed for applications that require high accuracy and low powe

Depósito:5000

Mínimo:1

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APT2X61D60J

MODULE

APT

1340+

Utsource Original Store

≥1:

Mex $357.04381

Mex $335.62119

≥50:

Mex $350.17759

Mex $329.16693

≥100:

Mex $343.31136

Mex $322.71268

From: Mex $343.31136

Description: APT2X61D60J is an IGBT module manufactured by Advanced Power Technology (APT). It is a 600V, 2x61A, dual IGBT module. Features: 600Voltage rating 2x61A current rating Low switching lo

Depósito:2000

Mínimo:1

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2SA1302,2SC3281

TO-3PL

15+

Utsource Original Store

≥1:

Mex $58.36293

Mex $54.86116

≥51:

Mex $54.92982

Mex $51.63403

From: Mex $54.92982

2SA1302 and 2SC3281 are PNP and NPN silicon epitaxial transistors, respectively, in a TO-3PL package. Description: 2SA1302: This is a PNP silicon epitaxial transistor designed for use in power ampli

Depósito:10000

Mínimo:10

Favorita

Presupuesto

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KBU606 6A600V SEP DIP4

DIP4

SEP

18+

Utsource Original Store

≥1:

Mex $4.11974

Mex $3.87255

≥51:

Mex $3.77642

Mex $3.54984

≥201:

Mex $3.43311

Mex $3.22713

≥501:

Mex $2.91815

Mex $2.74306

From: Mex $2.91815

Description: The KBU606 6A600V SEP DIP4 is a high-power, fast-recovery rectifier diode. It is designed for high-frequency switching applications. Features: -High power rating of 6A and 600V -High-fre

Depósito:10000

Mínimo:10

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RD01MUS2-T513

SOT-89

Mitsubishi

2018+

Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Utsource Original Store

≥1:

Mex $9.61272

Mex $9.03595

≥11:

Mex $8.58278

Mex $8.06782

≥51:

Mex $7.55285

Mex $7.09968

From: Mex $7.55285

Depósito:10000

Mínimo:4

Favorita

Presupuesto

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FP150R12KT4

MODULE

Infineon Technologies AG

19+

Utsource Original Store

≥1:

Mex $2207.00160

Mex $2074.58150

≥2:

Mex $2207.00160

Mex $2074.58150

≥5:

Mex $2059.86816

Mex $1936.27607

≥10:

Mex $2059.86816

Mex $1936.27607

≥20:

Mex $2059.86816

Mex $1936.27607

≥30:

Mex $2059.86816

Mex $1936.27607

≥50:

Mex $2059.86816

Mex $1936.27607

≥100:

Mex $2045.15482

Mex $1922.44553

≥500:

Mex $2030.44147

Mex $1908.61498

From: Mex $2030.44147

Description: Infineon IGBT Module Features: - High power density - Low switching losses - Low noise operation - High reliability - High temperature operation - Easy to use Applications: - Automotive -

Depósito:2000

Mínimo:1

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Presupuesto

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FF100R12RT4

MODULE

Infineon Technologies AG

17+

Utsource Original Store

≥1:

Mex $846.01728

Mex $795.25624

≥2:

Mex $846.01728

Mex $795.25624

≥5:

Mex $817.81670

Mex $768.74770

≥10:

Mex $806.53647

Mex $758.14429

≥20:

Mex $800.89636

Mex $752.84258

≥30:

Mex $789.61613

Mex $742.23916

≥50:

Mex $789.61613

Mex $742.23916

≥100:

Mex $783.97601

Mex $736.93745

≥500:

Mex $778.33590

Mex $731.63574

From: Mex $778.33590

Description: Infineon IGBT Module Features: Low switching losses Low conduction losses High short-circuit capability High frequency operation Low inductance Low stray inductance Low EMI High s

Depósito:2000

Mínimo:1

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Presupuesto

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PCR606

TO-92

CJ

10+

Utsource Original Store

≥1:

Mex $1.96178

Mex $1.84407

≥10:

Mex $1.22611

Mex $1.15255

≥50:

Mex $0.73567

Mex $0.69153

≥100:

Mex $0.68662

Mex $0.64543

≥150:

Mex $0.61306

Mex $0.57627

≥200:

Mex $0.49044

Mex $0.46102

≥500:

Mex $0.44140

Mex $0.41492

≥1000:

Mex $0.41688

Mex $0.39187

≥3000:

Mex $0.39236

Mex $0.36881

From: Mex $0.39236

Depósito:30000

Mínimo:30

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Presupuesto

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IRG4PC40W 27A600V TO247 G4PC40W

TO-247

International Rectifier

Utsource Original Store

≥1:

Mex $147.13344

Mex $138.30543

≥5:

Mex $139.77677

Mex $131.39016

≥10:

Mex $132.42010

Mex $124.47489

≥20:

Mex $128.74176

Mex $121.01725

≥50:

Mex $125.06342

Mex $117.55962

≥100:

Mex $121.38509

Mex $114.10198

≥200:

Mex $117.70675

Mex $110.64435

≥500:

Mex $116.23542

Mex $109.26129

≥1000:

Mex $114.02842

Mex $107.18671

From: Mex $114.02842

Depósito:5000

Mínimo:1

Favorita

Presupuesto

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7MBR35VKD120-50

MODULE

Fuji Electric

19+

Utsource Original Store

≥1:

Mex $717.27552

Mex $674.23899

≥2:

Mex $717.27552

Mex $674.23899

≥5:

Mex $693.36634

Mex $651.76436

≥10:

Mex $683.80266

Mex $642.77450

≥20:

Mex $679.02083

Mex $638.27958

≥30:

Mex $669.45715

Mex $629.28972

≥50:

Mex $669.45715

Mex $629.28972

≥100:

Mex $664.67532

Mex $624.79480

≥500:

Mex $659.89348

Mex $620.29987

From: Mex $659.89348

Depósito:2000

Mínimo:1

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Presupuesto

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FNA41560B5

MODULE

Fairchild

Utsource Original Store

≥1:

Mex $196.17792

Mex $184.40724

≥5:

Mex $186.36902

Mex $175.18688

≥10:

Mex $176.56013

Mex $165.96652

≥20:

Mex $171.65568

Mex $161.35634

≥50:

Mex $166.75123

Mex $156.74616

≥100:

Mex $161.84678

Mex $152.13598

≥200:

Mex $156.94234

Mex $147.52580

≥500:

Mex $154.98056

Mex $145.68172

≥1000:

Mex $152.03789

Mex $142.91561

From: Mex $152.03789

Depósito:5000

Mínimo:1

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Presupuesto

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GIPN3H60

MODULES

STMicroelectronics

1345+

Utsource Original Store

≥1:

Mex $196.17792

Mex $184.40724

≥5:

Mex $186.36902

Mex $175.18688

≥10:

Mex $176.56013

Mex $165.96652

≥20:

Mex $171.65568

Mex $161.35634

≥50:

Mex $166.75123

Mex $156.74616

≥100:

Mex $161.84678

Mex $152.13598

≥200:

Mex $156.94234

Mex $147.52580

≥500:

Mex $154.98056

Mex $145.68172

≥1000:

Mex $152.03789

Mex $142.91561

From: Mex $152.03789

The GIPN3H60 is a three-phase IGBT module manufactured by Infineon. It is designed for use in high power switching applications such as motor drives, UPS systems, and solar inverters. The module feat

Depósito:5000

Mínimo:1

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GBJ2510 25A/1000V

DIP4

SEP

Utsource Original Store

≥1:

Mex $5.14967

Mex $4.84069

≥50:

Mex $4.80636

Mex $4.51798

≥201:

Mex $4.46305

Mex $4.19526

≥501:

Mex $4.11974

Mex $3.87255

From: Mex $4.11974

Depósito:10000

Mínimo:10

Favorita

Presupuesto

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PS21353-NP

MODULE

Mitsubish

09+

Utsource Original Store

≥1:

Mex $446.30477

Mex $419.52648

≥10:

Mex $411.97363

Mex $387.25521

≥100:

Mex $377.64250

Mex $354.98395

From: Mex $377.64250

Description: The PS21353-NP is a high-speed, low-power, low-voltage, low-saturation, N-channel MOSFET module from Mitsubishi. Features: Low on-resistance Low input capacitance Low input/out

Depósito:2000

Mínimo:1

Favorita

Presupuesto

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SGP15N60

TO-220

Infineon Technologies AG

Utsource Original Store

≥1:

Mex $10.29934

Mex $9.68138

≥51:

Mex $9.61272

Mex $9.03595

≥501:

Mex $8.58278

Mex $8.06782

≥1001:

Mex $7.89616

Mex $7.42239

From: Mex $7.89616

Depósito:10000

Mínimo:10

Favorita

Presupuesto

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KBPC1510 15A 1000V SEP

DIP4

SEP

Utsource Original Store

≥1:

Mex $8.58278

Mex $8.06782

≥51:

Mex $6.17960

Mex $5.80883

≥201:

Mex $5.83629

Mex $5.48612

≥501:

Mex $5.49298

Mex $5.16340

From: Mex $5.49298

Description: KBPC1510 is a 15A 1000V bridge rectifier. It is a four-pin device with a single-phase full-wave rectification. Features: High surge current capability Low forward voltage drop Low rev

Depósito:10000

Mínimo:10

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Presupuesto

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LKG1AF-12V-16

Panasonic

18+

Utsource Original Store

≥1:

Mex $73.56672

Mex $69.15272

≥5:

Mex $69.88838

Mex $65.69508

≥10:

Mex $66.21005

Mex $62.23745

≥20:

Mex $64.37088

Mex $60.50863

≥50:

Mex $62.53171

Mex $58.77981

≥100:

Mex $60.69254

Mex $57.05099

≥200:

Mex $58.85338

Mex $55.32217

≥500:

Mex $58.11771

Mex $54.63065

≥1000:

Mex $57.01421

Mex $53.59336

From: Mex $57.01421

Depósito:10000

Mínimo:1

Favorita

Presupuesto

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RD06HVF1-501

TO-220

Mitsubishi

2018

Silicon RF Devices RF High Power MOS FETs (Discrete) RD06HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment

Utsource Original Store

≥1:

Mex $58.36293

Mex $54.86116

≥6:

Mex $57.33300

Mex $53.89302

≥21:

Mex $55.95975

Mex $52.60217

From: Mex $55.95975

Description: RD06HVF1-501 is a N-channel power MOSFET manufactured by Mitsubishi. Features: Drain-Source Voltage: 60V Drain Current: 6A RDS(on): 0.065Ω Gate-Source Voltage: ±20V Operating Temper

Depósito:10000

Mínimo:1

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FCBB20CH60SF

MODULE

Fairchild

1112+

Utsource Original Store

≥1:

Mex $230.70523

Mex $216.86292

≥50:

Mex $228.50804

Mex $214.79756

≥100:

Mex $219.71927

Mex $206.53611

From: Mex $219.71927

Description: This is a 600V, 20A, N-channel IGBT module from Fairchild Semiconductor. Features: Low gate charge Low saturation voltage High speed switching High current handling capability Low t

Depósito:5000

Mínimo:1

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