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Description: The NCE30H12K is a high-performance, low-voltage, high-current, N-channel MOSFET from Wuxi NCE Power Semiconductor. This device is designed to provide high-speed switching and low on-res
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Description: The MJD127 is a PNP Darlington transistor in a TO-252-2 (DPAK) package. It is designed for use in general purpose switching and amplifier applications. Features: High current gain Low
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Description: NPN Bipolar Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low Noise High Collector-Emitter Voltage Low Collector-Base Voltage High Switching Spe
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company